MOSFET SMD Type Dual N-Channel MOSFET AO6808-HF (KO6808-HF) ( SOT-23-6 ) Unit: mm +0.1 ● VDS (V) = 20V 6 5 4 1 2 3 +0.2 1.6 -0.1 ● ID =6 A (VGS = 4.5V) +0.2 2.8 -0.1 ■ Features 0.4 0.4 -0.1 ● RDS(ON) ＜ 25mΩ (VGS = 4V) ● RDS(ON) ＜ 27mΩ (VGS = 3.1V) 0.55 ● RDS(ON) ＜ 23mΩ (VGS = 4.5V) +0.02 0.15 -0.02 +0.01 -0.01 ● RDS(ON) ＜ 30mΩ (VGS = 2.5V) +0.2 -0.1 +0.1 1.1 -0.1 ● ESD Rating: 2000V HBM ● Pb−Free Package May be Available. The G−Suffix Denotes a 0-0.1 +0.1 0.68 -0.1 Pb−Free Lead Finish 1 S1 2 D1/D2 3 S2 4 G2 5 D1/D2 6 G1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol 10 Sec Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current Power Dissipation ID TA=70℃ PD V 6 4.6 4.6 3.7 1.3 0.8 0.8 0.5 Thermal Resistance.Junction- to-Ambient RthJA 95 150 Thermal Resistance.Junction- to-Lead RthJL - 68 Junction Temperature Storage Temperature Range A 60 IDM TA=25℃ Unit TJ 150 Tstg -55 to 150 W ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type Dual N-Channel MOSFET AO6808-HF (KO6808-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS VDS=0V, VGS=±10V VGS(th) VDS=VGS , ID=250 uA Gate Threshold Voltage Static Drain-Source On-Resistance On State Drain Current RDS(On) ID(ON) Forward Transconductance gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Total Gate Charge (10V) Total Gate Charge (4.5V) ID=250μA, VGS=0V Typ 1 VDS=20V, VGS=0V, TJ=55℃ 5 0.5 VGS=4V, ID=5.5A 25 VGS=3.1V, ID=5A 27 VGS=2.5V, ID=2A 30 60 34 620 VGS=0V, VDS=10V, f=1MHz 64 VGS=10V, VDS=10V, ID=6A 21 7.7 10 1.5 Turn-On DelayTime td(on) 236 Turn-On Rise Time tr 448 Turn-Off DelayTime td(off) VGS=10V, VDS=10V, RL=1.7Ω,RG=3Ω VSD IF= 6A, dI/dt= 100A/us IS=1A,VGS=0V * The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. ■ Marking Marking H8** F www.kexin.com.cn 9.5 25 nC ns us 4.1 tf Diode Forward Voltage pF 16.2 2.7 IS S 780 125 Qgd Maximum Body-Diode Continuous Current mΩ A Gate Drain Charge trr V 33 Qgs Qrr 1 VGS=4.5V, ID=6A TJ=125℃ Qg Body Diode Reverse Recovery Charge uA 23 VDS=5V, ID=6A uA ±10 VGS=4.5V, ID=6A VGS=4.5V, VDS=5V Unit V VDS=20V, VGS=0V Crss Body Diode Reverse Recovery Time Max 20 Gate Source Charge Turn-Off Fall Time 2 Min 33 9 ns nC 1.3 A 1 V MOSFET SMD Type Dual N-Channel MOSFET AO6808-HF (KO6808-HF) ■ Typical Characterisitics 60 40 3V 4.5V VDS= 5V 50 30 ID(A) ID (A) 30 2.5V 40 2V 20 20 10 VGS=1.5V 10 125°C 0 0 0 1 2 3 4 0.5 5 26 1.5 2 2.5 3 1.6 25 On Normalized On-Resistance VGS= 2.5V 24 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 23 VGS= 3.1V 22 VGS= 4.0V 21 20 VGS= 4.5V 19 0 4 8 12 16 VGS= 4.5V ID= 6A 1.4 1.2 1.0 0.8 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 55 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID= 6.0A 1E+01 45 125°C 1E+00 1E-01 IS (A) Ω) RDS(ON) (mΩ 25°C 35 125°C 1E-02 25°C 1E-03 25 1E-04 25°C 1E-05 15 1 2 3 4 5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1E-06 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.kexin.com.cn 3 MOSFET SMD Type Dual N-Channel MOSFET AO6808-HF (KO6808-HF) ■ Typical Characterisitics 10 800 Capacitance (pF) 8 VGS (Volts) 1000 VDS= 10V ID= 6A 6 4 Ciss 600 400 2 200 0 0 Coss Crss 0 3 6 9 12 15 18 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 1ms 10ms 100ms TJ(Max)=150°C TA=25°C DC 10s 0.1 1 10 VDS (Volts) . Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 1 10 1 0.01 0.1 TJ(Max)=150°C TA=25°C 100 10µs Power (W) ID (Amps) RDS(ON) limited 1 Zθ JA Normalized Transient Thermal Resistance 20 1000 100µs 0.1 15 VDS (Volts) Figure 8: Capacitance Characteristics 100 10 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=150°C/W 100 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton Single Pulse T 0.001 0.00001 4 0.0001 www.kexin.com.cn 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E) 100 1000