Renesas FY5AEJ-03 Mitsubishi power mosfet high-speed switching use nch/pch power mosfet Datasheet

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI POWER MOSFET
ARY
FY5AEJ-03
IMIN
PREL
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ation
nge.
pecific to cha
final s subject
a
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Notice parame
Som
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
FY5AEJ-03
OUTLINE DRAWING
➄
➀
➃
6.0
4.4
➇
Dimensions in mm
1.8 MAX.
5.0
➀ ➂ SOURCE
➁ ➃ GATE
➄ ➅ ➆ ➇ DRAIN
0.4
1.27
➆➇
➂
➃
➁
●
●
●
●
4V DRIVE
VDSS ............................................................................... ±30V
rDS (ON) (MAX) ....................................................... 30/65mΩ
ID ..................................................................................... 5/–4A
➀
➄➅
SOP-8
APPLICATION
Motor control, Lamp control, Solenoid control,
DC-DC converter, Li-ionbattery, notebook p/c, etc
MAXIMUM RATINGS (Tc = 25°C)
Symbol
Parameter
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
Drain current
Drain current (Pulsed)
IDA
IS
Avalanche current (Pulsed)
Source current
ISM
Source current (Pulsed)
PD
T ch
Maximum power dissipation
Channel temperature
T stg
—
Storage temperature
Weight
Conditions
VGS = 0V
VDS = 0V
L = 10µH
Ratings
p-ch
–30
±20
5
±20
–4
V
A
35
5
–28
–4
A
A
1.5
6.0
–1.5
–6.0
A
A
1.6
Typical value
Unit
n-ch
30
1.7
V
W
–55~+150
–55~+150
°C
°C
0.07
g
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FY5AEJ-03
.
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ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
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tric lim
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
N-ch
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
IDSS
Drain-source leakage current
VDS = 30V, VGS = 0V
VGS (th)
rDS (ON)
Gate-source threshold voltage ID = 1mA, VDS = 10V
Drain-source on-state resistance ID = 5A, VGS = 10V
rDS (ON)
y fs
Drain-source on-state resistance ID = 2A, VGS = 4V
Forward transfer admittance
ID = 5A, VDS = 10V
Ciss
Coss
Input capacitance
Output capacitance
Crss
td (on)
Reverse transfer capacitance
Turn-on delay time
tr
Rise time
td (off)
tf
Turn-off delay time
Fall time
VSD
Rth (ch-a)
Source-drain voltage
Thermal resistance
trr
Reverse recovery time
Test conditions
Limits
Unit
Min.
Typ.
Max.
30
—
—
—
—
±0.1
V
µA
—
—
0.1
mA
1.0
—
1.5
23
2.0
30
V
mΩ
—
—
40
9
55
—
mΩ
S
—
—
550
220
—
—
pF
pF
—
—
115
12
—
—
pF
ns
—
20
—
ns
—
—
40
40
—
—
ns
ns
IS = 1.5A, VGS = 0V
Channel to ambiet
—
—
0.75
—
1.10
78.1
V
°C/W
IS = 1.5A, dis/d t = –50A/µs
—
100
—
ns
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 15V, ID = 2A, VGS = 10V, RGEN = RGS = 50Ω
P-ch
Symbol
Parameter
Test conditions
Limits
Min.
–30
Typ.
—
Max.
—
Unit
V (BR) DSS
Drain-source breakdown voltage ID = 1mA, VGS = 0V
IGSS
Gate-source leakage current
VGS = ±20V, VDS = 0V
—
—
±0.1
µA
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
VDS = –30V, VGS = 0V
ID = –1mA, VDS = –10V
—
–1.5
—
–2.0
–0.1
–2.5
mA
V
rDS (ON)
rDS (ON)
Drain-source on-state resistance ID = –4A, VGS = –10V
Drain-source on-state resistance ID = –2A, VGS = –4V
—
—
50
90
65
135
mΩ
mΩ
y fs
Ciss
Forward transfer admittance
Input capacitance
ID = –4A, VDS = –10V
—
—
6
870
—
—
S
pF
Coss
Crss
Output capacitance
Reverse transfer capacitance
VDS = –10V, VGS = 0V, f = 1MHz
—
—
230
110
—
—
pF
pF
td (on)
Turn-on delay time
—
10
—
ns
tr
td (off)
Rise time
Turn-off delay time
—
—
10
60
—
—
ns
ns
tf
VSD
Fall time
Source-drain voltage
IS = –1.5A, V GS = 0V
—
—
30
–0.88
—
–1.20
ns
V
Rth (ch-a)
trr
Thermal resistance
Reverse recovery time
Channel to ambiet
IS =1.5A, dis/dt = 50A/µs
—
—
—
100
73.5
—
°C/W
ns
VDD = –15V, ID = –2A, VGS = –10V, RGEN = RGS = 50Ω
V
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FY5AEJ-03
.
ge.
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ecific ct to chan
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ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
PERFORMANCE CURVES (N-ch)
1.6
1.2
0.8
0.4
0
MAXIMUM SAFE OPERATING AREA
5
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
2.0
0
50
100
150
101
100µs
7
5
3
2
1ms
100
10ms
7
5
3
2
100ms
TC = 25°C
Single Pulse
10–1
7
5
3
200
tw = 10µs
DC
2 3
5 7 100
2 3
5 7 101
2 3
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 10V,8V,6V,5V
20
VGS = 10V,8V,6V,5V
10
4V
16
Tc = 25°C
Pulse Test
12
8
3V
4
DRAIN CURRENT ID (A)
4V
DRAIN CURRENT ID (A)
5
8
6
3V
4
PD = 1.6W
2
PD = 1.6W
0
0
0.2
0.4
0.6
0.8
0
1.0
0.2
0.3
0.4
0.5
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
100
Tc = 25°C
Pulse Test
0.8
0.6
0.4
ID = 8A
0.2
4A
2A
0
2
4
6
8
GATE-SOURCE VOLTAGE VGS (V)
10
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
0.1
DRAIN-SOURCE VOLTAGE VDS (V)
1.0
0
0
Tc = 25°C
Pulse Test
80
60
VGS = 4V
40
20
10V
0
10–1 2 3 5 7100 2 3 5 7101 2 3 5 7102
DRAIN CURRENT ID (A)
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FY5AEJ-03
.
ge.
ation
ecific ct to chan
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nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
102
20
16
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
7
5
12
Tc = 25°C
VDS = 10V
Pulse Test
8
4
3
2
101
7
5
VDS =10V
Pulse Test
3
TC = 25°C,75°C,125°C
2
0
2
4
6
8
100 0
10
10
102
Ciss
7
5
3
Coss
2
102
Crss
Tch = 25°C
VGS = 0V
f = 1MHZ
10–1
2 3
5 7 100
2 3
5 7 101
tr
2
101
td(on)
7
5
100
10–1
2
Tch = 25°C
VGS = 10V
VDD = 15V
RGEN = RGS = 50Ω
2
3
5 7 100
2
5 7 101
3
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
8
VDS =
6
15V
20V
4
25V
2
Tch = 25°C
ID =5A
4
8
12
16
GATE CHARGE Qg (nC)
20
SOURCE CURRENT IS (A)
GATE-SOURCE VOLTAGE VGS (V)
td(off)
3
20
0
5 7 102
3
tf
7
5
3
2
10
0
2
SWITCHING CHARACTERISTICS
(TYPICAL)
103
2
5 7 101
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
2
3
3
DRAIN CURRENT ID (A)
2
7
5
2
GATE-SOURCE VOLTAGE VGS (V)
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
0
VGS = 0V
Pulse Test
16
TC =
125°C
12
75°C
25°C
8
4
0
0
0.4
0.8
1.2
1.6
2.0
SOURCE-DRAIN VOLTAGE VSD (V)
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FY5AEJ-03
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
4.0
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
7
5
3
2
100
7
5
VGS = 10V
ID = 5A
Pulse Test
3
2
10–1
–50
0
50
100
3.2
1.6
0.8
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
1.2
1.0
VGS = 0V
ID = 1mA
Pulse Test
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
Pulse Test
2.4
0
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
P
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7
5
D = 1.0
3
2
0.5
101
0.2
7
5
3
2
100
7
5
0.1
0.05
0.02
PDM
tw
0.01
T
Single Pulse
D= tw
T
3
2
10–1 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
PULSE WIDTH tw (s)
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FY5AEJ-03
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
PERFORMANCE CURVES (P-ch)
DRAIN CURRENT ID (A)
1.6
1.2
0.8
0.4
0
0
DRAIN CURRENT ID (A)
50
100
150
200
10ms
–100
–7
–5
–3
–2
100ms
TC = 25°C
Single Pulse
–10–1
DC
–2 –3
–5 –7 –101
–2 –3
–5
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
–5V
–4V
–12
–8
–4
–3V
–0.8
–1.2
–1.6
–4V
PD =
1.7W
Tc = 25°C
Pulse Test
–0.4
VGS = –10V,–8V,–6V,–5V
–10
–8
Tc = 25°C
Pulse Test
–6
–4
–3V
–2
0
–2.0
0
–0.2
–0.4
–0.6
–0.8
–1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN-SOURCE VOLTAGE VDS (V)
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
200
Tc = 25°C
Pulse Test
–1.6
–1.2
–0.8
ID =
–8A
–0.4
–4A
–2A
0
–2
–4
–6
–8
–10
GATE-SOURCE VOLTAGE VGS (V)
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
–2.0
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
1ms
DRAIN-SOURCE VOLTAGE VDS (V)
–16
0
–7
–5
–3
–2
–7
–5
–3
–2 –3 –5 –7 –100
PD = 1.7W
0
tw =
100µs
–101
CASE TEMPERATURE TC (°C)
VGS = –10V,–8V,–6V
–20
0
MAXIMUM SAFE OPERATING AREA
–5
–3
–2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
2.0
Tc = 25°C
Pulse Test
160
VGS = –4V
120
80
40
–10V
0
–10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7 –101 –2 –3 –5 –7 –102
DRAIN CURRENT ID (A)
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FY5AEJ-03
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
P
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
102
–20
–16
–12
Tc = 25°C
VDS = –10V
Pulse Test
–8
–4
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
7
5
3
2
101
7
5
VDS = –10V
Pulse Test
TC = 25°C, 75°C,125°C
3
2
0
0
–2
–4
–6
–8
100 0
–10
–10
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
7
5
3
Coss
2
102
Crss
7
5
Tch = 25°C
VGS = 0V
f = 1MHZ
3
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
102
Ciss
103
td(off)
7
5
tf
3
2
tr
td(on)
101
7
5
Tch = 25°C
VGS = –10V
VDD = –15V
RGEN = RGS = 50Ω
3
2
100
–10–1 –2 –3 –5 –7 –100
2
–10–1 –2 –3 –5 –7 –100 –2 –3 –5 –7–101 –2
–2 –3 –5 –7 –101
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–20
–10
VGS = 0V
Pulse Test
VDS =
SOURCE CURRENT IS (A)
–15V
–8
–20V
–25V
–6
Tch = 25°C
ID = –4A
–4
–2
0
–5 –7 –102
GATE-SOURCE VOLTAGE VGS (V)
2
GATE-SOURCE VOLTAGE VGS (V)
–2 –3 –5 –7 –101 –2 –3
0
4
8
12
16
20
GATE CHARGE Qg (nC)
24
–16
TC =
25°C
75°C
–12
125°C
–8
–4
0
0
–0.4
–0.8
–1.2
–1.6
–2.0
SOURCE-DRAIN VOLTAGE VSD (V)
Aug. 1999
MITSUBISHI POWER MOSFET
ARY
MIN
RELI
FY5AEJ-03
.
ge.
ation
ecific ct to chan
je
nal sp
ot a fiits are sub
n
is
is
e: Th
tric lim
Notice parame
Som
HIGH-SPEED SWITCHING USE
Nch/Pch POWER MOSFET
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
101
–4.0
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
7
5
3
2
100
7
5
VGS = –10V
ID = –4A
Pulse Test
3
2
10–1
–50
0
50
100
–3.2
–1.6
–0.8
0
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
1.2
1.0
VGS = 0V
ID = –1mA
Pulse Test
0.8
0.6
0.4
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = –10V
ID = –1mA
Pulse Test
–2.4
150
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch-a) (°C/W)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
P
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102 D = 1.0
7
5
0.5
3
2
0.2
101
0.1
7
5
0.05
3
2
0.02
100
7
5
3
2
PDM
0.01
tw
T
Single Pulse
D= tw
T
10–1 –4
10 2 3 5 710–3 2 3 5 7 10–2 2 3 5710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
PULSE WIDTH tw (s)
Aug. 1999
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