STMicroelectronics BUL903 High voltage fast-switching npn power transistor Datasheet

BUL903ED

HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
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INTEGRATED ANTISATURATION AND
PROTECTION NETWORK
INTEGRATED ANTIPARALLEL COLLECTOR
EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
ARCING TEST SELF PROTECTED
APPLICATIONS
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LAMP ELECTRONIC BALLAST FOR
FLUORESCENT LIGHTING USING 277V
HALF BRIDGE CURRENT-FED
CONFIGURATION
DESCRIPTION
The BUL903ED is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
The device has been designed in order to
operate without baker clamp and transil
protection. This enables saving from 2 up to 10
components in the application.
1
2
3
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Uni t
V CES
Collector-Emitter Voltage (V BE = 0)
900
V
V CEO
Collector-Emitter Voltage (IB = 0)
400
V
V EBO
Emitter-Base Voltage (IC = 0)
7
V
Collector Current
5
A
IC
I CM
IB
Collector Peak Current (tp <5 ms)
8
A
Base Current
2
A
4
A
I BM
Base Peak Current (tp <5 ms)
P t ot
o
Total Dissipation at T c = 25 C
T stg
Storage Temperature
Tj
June 1998
Max. O perating Junction Temperature
70
W
-65 to 150
o
C
150
o
C
1/6
BUL903ED
THERMAL DATA
R t hj-ca se
R t hj- amb
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Max
Max
o
1.8
62.5
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Min.
Typ .
Max.
Un it
1
mA
100
µA
I CES
Collector Cut-off
Current (V BE = 0)
V CE = 900 V
I EBO
Base-Emitter Leakage
Current
V EB = 7 V
V CEO(sus)
Collector-Emitter
Sustaining Voltage
(IB = 0)
I C = 10 mA
L = 25 mH
V CE(sat )∗
Collector-Emitter
Saturation Voltage
IC = 1 A
I B = 0.15 A
1.0
V
V BE(s at)∗
Base-Emitter
Saturation Voltage
I C = 0.1 A
I C = 0.5 A
I C = 2.0 A
IB = 0.05 A
IB = 0.1 A
IB = 0.4 A
1.0
1.1
1.2
V
V
V
DC Current G ain
I C = 5 mA
I C = 0.5 A
V CE = 10 V
V CE = 3 V
Parallel Diode Forward
Voltage
IF = 3 A
1.2
V
td
tr
ts
tf
RESISTIVE LO AD
Delay Time
Rise Time
Storage Time
Fall T ime
V CC = 125 V
I B1 = 0.05 A
t p = 300 µs
I C = 0.7 A
I B2 = 0.4 A
0.2
1.0
0.8
0.25
µs
µs
µs
µs
td
tr
ts
tf
RESISTIVE LO AD
Delay Time
Rise Time
Storage Time
Fall T ime
V CC = 125 V
I B1 = 0.045 A
t p = 300 µs
I C = 0.5 A
I B2 = 0.5 A
0.2
0.5
0.8
0.5
µs
µs
µs
µs
T RR
Diode Reverse
Recovery Time
IF = 1 A
V DD = 30 V
di/dt = 100 A/µs
E sb
Avalanche Energy
L = 2 mH
h FE∗
VF
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/6
400
V
8
20
300
6
ns
mJ
BUL903ED
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/6
BUL903ED
Reverse Biased SOA
Resistive Load Switching Test Circuit
Energy Rating Test Circuit
Vcc
C
L=2mH
Rg
T1
Vin
TUT
Vbb
+
Tp
SC12620
4/6
BUL903ED
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
MAX.
MIN.
A
4.40
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
D1
TYP.
inch
1.27
TYP.
MAX.
0.107
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
L2
16.4
0.409
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
L9
3.5
3.93
0.137
0.154
DIA.
3.75
3.85
0.147
0.151
P011C
5/6
BUL903ED
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
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