ON MPS651 Amplifier transistor Datasheet

NPN − MPS650, MPS651;
PNP − MPS750, MPS751
MPS651 and MPS751 are Preferred Devices
Amplifier Transistors
Features
• Pb−Free Packages are Available*
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COLLECTOR
3
MAXIMUM RATINGS
Rating
Symbol
Collector −Emitter Voltage
MPS650; MPS750
MPS651; MPS751
VCE
Collector −Base Voltage
MPS650; MPS750
MPS651; MPS751
VCB
Emitter −Base Voltage
VEB
5.0
Vdc
Collector Current − Continuous
IC
2.0
Adc
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
W
mW/°C
TJ, Tstg
−55 to +150
°C
Operating and Storage Junction
Temperature Range
Value
Unit
Vdc
40
60
Vdc
2
BASE
COLLECTOR
3
NPN
1
EMITTER
2
BASE
60
80
PNP
1
EMITTER
TO−92
CASE 29
STYLE 1
1
12
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
VCE
200
°C/W
Thermal Resistance, Junction−to−Case
VCB
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
3
STRAIGHT LEAD
BULK PACK
2
3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
MPS
xxx
AYWW G
G
xxx = 650, 750, 651, or 751
A
= Assembly Location
Y
= Year
WW = Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 3
1
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MPS650/D
NPN − MPS650, MPS651; PNP − MPS750, MPS751
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
40
60
−
−
60
80
−
−
5.0
−
−
−
0.1
0.1
−
0.1
75
75
75
40
−
−
−
−
−
−
0.5
0.3
Unit
OFF CHARACTERISTICS
V(BR)CEO
Collector −Emitter Breakdown Voltage (Note 1)
(IC = 10 mAdc, IB = 0)
MPS650, MPS750
MPS651, MPS751
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0 )
Vdc
V(BR)CBO
MPS650, MPS750
MPS651, MPS751
Emitter −Base Breakdown Voltage
(IC = 0, IE = 10 mAdc)
V(BR)EBO
Collector Cutoff Current
(VCB = 60 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Vdc
Vdc
mAdc
ICBO
MPS650, MPS750
MPS651, MPS751
Emitter Cutoff Current
(VEB = 4.0 V, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS (Note 1)
hFE
DC Current Gain
(IC = 50 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
−
Collector −Emitter Saturation Voltage
(IC = 2.0 A, IB = 200 mA)
(IC = 1.0 A, IB = 100 mA)
VCE(sat)
Vdc
Base−Emitter On Voltage
(IC = 1.0 A, VCE = 2.0 V)
VBE(on)
−
1.0
Vdc
Base −Emitter Saturation Voltage
(IC = 1.0 A, IB = 100 mA)
VBE(sat)
−
1.2
Vdc
fT
75
−
MHz
SMALL−SIGNAL CHARACTERISTICS
Current −Gain − Bandwidth Product (Note 2)
(IC = 50 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle = 2.0%.
2. fT is defined as the frequency at which |hfe| extrapolates to unity.
NPN
PNP
300
250
240
225
VCE = 2.0 V
TJ = 125°C
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
270
210
180
150
120
90
25°C
−55 °C
60
30
0
10
TJ = 125°C
VCE = −2.0 V
200
175
150
25°C
125
100
75
−55 °C
50
25
20
50
0
−10 −20
100 200
500 1.0 A 2.0 A 4.0 A
IC, COLLECTOR CURRENT (mA)
Figure 1. MPS650, MPS651
Typical DC Current Gain
−50 −100 −200 −500 −1.0 A −2.0 A −4.0 A
IC, COLLECTOR CURRENT (mA)
Figure 2. MPS750, MPS751
Typical DC Current Gain
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2
NPN − MPS650, MPS651; PNP − MPS750, MPS751
NPN
1.8
−1.8
1.6
−1.6
1.4
−1.4
1.2
1.0
VBE(sat) @ IC/IB = 10
0.8
VBE(on) @ VCE = 2.0 V
0.6
0.4
−1.2
VBE(sat) @ IC/IB = 10
−1.0
−0.8
VBE(on) @ VCE = 2.0 V
−0.6
−0.4
VCE(sat) @ IC/IB = 10
0.2
0
PNP
−2.0
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
2.0
50
100
200
500
1.0 A
IC, COLLECTOR CURRENT (mA)
VCE(sat) @ IC/IB = 10
−0.2
2.0 A
0
4.0 A
−50
NPN
1.0
−0.7
0.6
−0.6
0.5
−0.5
IC = 10 mA IC = 100 mA
IC = 500 mA
−0.4
IC = 2.0 A
−0.2
0.1
−0.1
0
0.05 0.1 0.2
0.5 1.0 2.0 5.0 10 20
IB, BASE CURRENT (mA)
50 100 200 500
NPN
IC, COLLECTOR CURRENT
−50 −100 −200 −500
PNP
−10
1.0 ms
1.0
0.5
0.01
1.0
IC = −100 mA
−4.0
2.0
0.02
IC = −2.0 A
Figure 6. MPS750, MPS751
Collector Saturation Region
4.0
0.05
IC = −10 mA
0
−0.05 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20
IB, BASE CURRENT (mA)
Figure 5. MPS650, MPS651
Collector Saturation Region
10
IC = −500 mA
−0.3
0.2
0.1
TJ = 25°C
−0.8
TJ = 25°C
0.7
0.2
−4.0 A
−0.9
0.8
0.3
−2.0 A
PNP
−1.0
0.9
0.4
−200
−500 −1.0 A
IC, COLLECTOR CURRENT (mA)
Figure 4. MPS750, MPS751
On Voltages
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 3. MPS650, MPS651
On Voltages
−100
TA = 25°C
100 ms
−2.0
1.0 ms
−1.0
MPS65
0
MPS65
1
−0.5
−0.2
TC = 25°C
−0.1
−0.05
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
2.0
5.0
10
20
50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
−0.02
−0.01
−1.0
100
Figure 7. MPS650, MPS651 SOA,
Safe Operating Area
TA = 25°C
MPS75
0
MPS75
1
100 ms
TC = 25°C
WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
−2.0
−5.0
−10
−20
−50
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 8. MPS750, MPS751 SOA,
Safe Operating Area
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3
−100
NPN − MPS650, MPS651; PNP − MPS750, MPS751
ORDERING INFORMATION
Package
Shipping†
TO−92
5000 Units / Bulk
MPS650G
TO−92
(Pb−Free)
5000 Units / Bulk
MPS650RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
MPS650ZL1G
TO−92
(Pb−Free)
2000 / Tape & Ammunition
TO−92
5000 Units / Bulk
MPS651G
TO−92
(Pb−Free)
5000 Units / Bulk
MPS651RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 / Tape & Ammunition
MPS651RLRMG
TO−92
(Pb−Free)
2000 / Tape & Ammunition
MPS750G
TO−92
(Pb−Free)
5000 Units / Bulk
MPS750RLRAG
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 / Tape & Ammunition
TO−92
(Pb−Free)
2000 / Tape & Ammunition
TO−92
5000 Units / Bulk
TO−92
(Pb−Free)
5000 Units / Bulk
TO−92
2000 / Tape & Reel
TO−92
(Pb−Free)
2000 / Tape & Reel
TO−92
2000 / Tape & Ammunition
MPS751RLRPG
TO−92
(Pb−Free)
2000 / Tape & Ammunition
MPS751ZL1G
TO−92
(Pb−Free)
2000 / Tape & Ammunition
Device
MPS650
MPS651
MPS651RLRM
MPS750RLRP
MPS750RLRPG
MPS751
MPS751G
MPS751RLRA
MPS751RLRAG
MPS751RLRP
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
4
NPN − MPS650, MPS651; PNP − MPS750, MPS751
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AM
A
B
STRAIGHT LEAD
BULK PACK
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
N
A
R
BENT LEAD
TAPE & REEL
AMMO PACK
B
P
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
T
SEATING
PLANE
K
D
X X
G
J
V
1
C
SECTION X−X
DIM
A
B
C
D
G
J
K
N
P
R
V
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.40
0.54
2.40
2.80
0.39
0.50
12.70
−−−
2.04
2.66
1.50
4.00
2.93
−−−
3.43
−−−
N
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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2N6515/D
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