AP30T10GK-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ Halogen Free & RoHS Compliant Product
BVDSS
100V
RDS(ON)
55mΩ
ID
G
4.8A
S
Description
D
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching,ruggedized device design, low onresistance and cost-effectiveness.
The SOT-223 package is designed for suface mount application, larger
heatsink than SO-8 and SOT package.
S
D
SOT-223
G
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
3
Continuous Drain Current , VGS @ 10V
3
Continuous Drain Current , VGS @ 10V
1
Rating
Units
100
V
+20
V
4.8
A
3.9
A
20
A
2.78
W
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
3
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
45
℃/W
1
201112131
AP30T10GK-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
100
-
-
V
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=4A
-
-
55
mΩ
VGS=5V, ID=2A
-
-
90
mΩ
0.9
-
2.5
V
-
6.5
-
S
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
VDS=10V, ID=4A
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=80V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=4A
-
11.5
18.4
nC
Qgs
Gate-Source Charge
VDS=50V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
7
-
nC
td(on)
Turn-on Delay Time
VDS=50V
-
6.5
-
ns
tr
Rise Time
ID=1A
-
6.5
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
23
-
ns
tf
Fall Time
VGS=10V
-
11
-
ns
Ciss
Input Capacitance
VGS=0V
-
850
1360
pF
Coss
Output Capacitance
VDS=25V
-
115
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
80
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.4
2.8
Ω
Min.
Typ.
IS=2A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=4A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
61
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board, t <10sec ; 120 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP30T10GK-HF
50
40
T A = 25 o C
ID , Drain Current (A)
40
ID , Drain Current (A)
T A = 150 o C
10V
7.0V
6.0V
5.0V
30
V G = 4.0V
20
10V
7.0V
6.0V
5.0V
30
V G = 4.0V
20
10
10
0
0
0
2
4
6
8
0
10
2
4
6
8
10
12
14
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.4
I D =4A
V G =10V
I D =2A
o
T A =25 C
Normalized RDS(ON)
RDS(ON) (mΩ)
2.0
70
60
1.6
1.2
50
0.8
0.4
40
2
4
6
8
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
2
Normalized VGS(th) (V)
I D =250uA
IS(A)
1.5
T j =150 o C
T j =25 o C
1
1.2
0.8
0.4
0.5
0.0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP30T10GK-HF
ID=4A
V DS = 50 V
8
1200
6
C (pF)
VGS , Gate to Source Voltage (V)
f=1.0MHz
1600
10
C iss
800
4
400
2
C oss
C rss
0
0
0
4
8
12
16
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Operation in this area
limited by RDS(ON)
100us
ID (A)
10
Normalized Thermal Response (Rthja)
Duty factor=0.5
1ms
1
10ms
100ms
0.1
1s
o
T A =25 C
Single Pulse
0.2
0.1
0.1
0.05
0.02
0.01
PDM
0.01
t
T
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 120℃/W
DC
0.001
0.01
0.01
0.1
1
10
100
0.0001
1000
0.001
0.01
V DS , Drain-to-Source Voltage (V)
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
6
V DS =5V
ID , Drain Current (A)
ID , Drain Current (A)
5
20
T j =150 o C
10
4
3
2
o
T j =25 C
1
o
T j =-40 C
0
0
0
2
4
6
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
25
50
75
100
125
150
o
T A , Ambient Temperature ( C )
Fig 12. Maximum Continuous Drain Current
v.s. Ambient Temperature
4