Infineon BCM856S Pnp silicon af transistor array Datasheet

BCM856S
PNP Silicon AF Transistor Array
• Precision matched transistor pair: ∆I C ≤ 10%
• For current mirror applications
4
5
6
1
• Low collector-emitter saturation voltage
2
3
• Two (galvanic) internal isolated Transistors
• Complementary type: BCM846S
• BC856S: For orientation in reel see
package information below
• Pb-free (RoHS compliant) package 1)
• Qualified according AEC Q101
C1
B2
E2
6
5
4
TR2
TR1
1
2
3
E1
B1
C2
EHA07175
Type
BCM856S
Marking
Pin Configuration
Package
3Ms
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
65
Collector-emitter voltage
VCES
80
Collector-base voltage
VCBO
80
Emitter-base voltage
VEBO
5
Collector current
IC
100
Peak collector current
ICM
200
Total power dissipation-
Ptot
250
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
Value
Unit
V
mA
TS = 115 °C
1Pb-containing
-65 ... 150
package may be available upon special request
1
2007-04-27
BCM856S
Thermal Resistance
Parameter
Symbol
Junction - soldering point 1)
RthJS
Value
Unit
140
K/W
Values
Unit
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
min.
typ.
max.
V(BR)CEO
65
-
-
V(BR)CBO
80
-
-
V(BR)CES
80
-
-
V(BR)EBO
5
-
-
DC Characteristics
Collector-emitter breakdown voltage
V
IC = 10 mA, IB = 0 A
Collector-base breakdown voltage
IC = 10 µA, IE = 0 A
Collector-emitter breakdown voltage
IC = 10 µA, VBE = 0 A
Emitter-base breakdown voltage
IE = 10 µA, I C = 0 A
Collector-base cutoff current
I CBO
µA
VCB = 30 V, IE = 0 A
-
-
0.015
VCB = 30 V, IE = 0 A, TA = 150 °C
-
-
5
DC current gain-2)
hFE
-
IC = 10 µA, VCE = 5 V
-
250
-
IC = 2 mA, VCE = 5 V
200
290
450
Collector-emitter saturation voltage2)
VCEsat
mV
IC = 10 mA, IB = 0.5 mA
-
90
300
IC = 100 mA, IB = 5 mA
-
250
650
IC = 10 mA, IB = 0.5 mA
-
700
-
IC = 100 mA, IB = 5 mA
-
850
-
IC = 2 mA, VCE = 5 V
600
650
750
IC = 10 mA, VCE = 5 V
-
-
820
Base emitter saturation voltage 2)
VBEsat
Base-emitter voltage-2)
VBE(ON)
∆I C
Matching
IB = 1 µA, VCE1 = V CE2 = 1.0V
IB = 100 µA, VCE1 = VCE2 = 1.0V
1For
%
-10
-
10
-10
-
10
calculation of R thJA please refer to Application Note Thermal Resistance
2Puls
test: t < 300µs; D < 2%
2
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BCM856S
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
fT
-
250
-
MHz
Ccb
-
3
-
pF
Ceb
-
8
-
h11e
-
4.5
-
kΩ
h12e
-
2
-
10-4
h21e
-
330
-
-
h22e
-
30
-
µS
F
-
-
10
dB
AC Characteristics
Transition frequency
IC = 20 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Short-circuit input impedance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit reverse voltage transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Short-circuit forward current transf. ratio
IC = 2 mA, VCE = 5 V, f = 1 kHz
Open-circuit output admittance
IC = 2 mA, VCE = 5 V, f = 1 kHz
Noise figure
IC = 200 µA, VCE = 5 V, f = 1 kHz,
∆ f = 200 Hz, RS = 2 kΩ
3
2007-04-27
BCM856S
DC current gain hFE = ƒ(IC)
Collector-emitter saturation voltage
VCE = 5V
IC = ƒ(VCEsat), hFE = 20
EHP00382
10 3
5
h FE
EHP00380
10 2
ΙC
100 C
mA
100 C
25 C
-50 C
25 C
-50 C
10 2
10 1
5
5
10 1
10
5
5
10 0
10 -2
5
10 -1
5 10
0
5 10
1
mA 10
ΙC
0
10 -1
2
0
0.1
0.2
0.4
0.3
Base-emitter saturation voltage
Output characteristics IC = ƒ(VCE),
IC = ƒ(V BEsat), hFE = 20
IB = parameter
EHP00379
10 2
V 0.5
VCEsat
15
mA
mA
ΙC
1
IB = 40µA
12
11
IB = 36µA
10
IC
10
100 C
25 C
-50C
5
IB =32µA
9
IB = 28µA
8
IB = 24µA
7
IB = 20µA
6
10 0
IB = 16µA
5
IB = 12µA
4
5
3
IB = 8µA
2
IB = 4µA
1
10
-1
0
0.2
0.4
0.6
0.8
0
0
V
1.2
V BEsat
1
2
3
V
5
VCE
4
2007-04-27
BCM856S
Collector current I C = ƒ(VBE)
VCE = Parameter
Collector cutoff current ICBO = ƒ(TA)
VCBO = 30 V
10 -1
A
-2
10
5V
5V
5V
1V
1V
1V
EHP00381
10 4
nA
Ι CB0
10 3
5
IC
TA=100°C
10 -3
max
10 2
TA=25°C
5
10 -4
TA=-50°C
typ
10 1
5
10 -5
10
0
5
10 -6
0.2
0.3
0.4
0.5
0.6
0.7
0.8
V
10 -1
1
0
50
100
VBE
Collector-base capacitance Ccb = ƒ(V CB)
Emitter-base capacitance Ceb = ƒ(VEB)
EHP00378
12
pF
MHz
5
10
CCB(CEB )
fT
150
TA
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10 3
C
9
8
7
10 2
6
5
5
CEB
4
3
2
1
10
1
10 -1
5 10 0
5
10 1
mA
0
0
10 2
ΙC
CCB
4
8
12
16
V
22
VCB(VEB)
5
2007-04-27
BCM856S
Total power dissipation Ptot = ƒ(TS)
Permissible Pulse Load RthJS = ƒ(t p)
10 3
300
mW
K/W
250
10 2
R thJS
P tot
225
200
175
10 1
150
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
125
100
10 0
75
50
25
0
0
15
30
45
60
90 105 120 °C
75
10 -1 -6
10
150
TS
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
Permissible Pulse Load
Ptotmax/P totDC = ƒ(tp)
Ptotmax /PtotDC
10 3
-
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
10 0 -6
10
10
-5
10
-4
10
-3
10
-2
s
10
0
tp
6
2007-04-27
BCM856S
Definition of matching
∆I C = (IC2-IC1)/IC1
$
#
"
6 6
!
1>
1? 1?
8 ? A 8 ? A
7
2007-04-27
Package SOT363
BCM856S
Package Outline
2 ±0.2
0.9 ±0.1
+0.1
6x
0.2 -0.05
0.1
0.1 MAX.
M
0.1
Pin 1
marking
1
2
3
A
1.25 ±0.1
4
0.1 MIN.
5
2.1 ±0.1
6
0.15 +0.1
-0.05
0.65 0.65
0.2
M
A
Foot Print
1.6
0.9 0.7
0.3
0.65
0.65
Marking Layout (Example)
Small variations in positioning of
Date code, Type code and Manufacture are possible.
Manufacturer
2005, June
Date code (Year/Month)
Pin 1 marking
Laser marking
BCR108S
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
0.2
2.3
8
4
Pin 1
marking
1.1
2.15
8
2007-04-27
BCM856S
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
9
2007-04-27
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