NSC LMV1012TP-07 Pre-amplified icâ s for high gain 2-wire microphone Datasheet

LMV1012 Analog Series:
Pre-Amplified IC’s for High Gain 2-Wire Microphones
General Description
Features
The LMV1012 is an audio amplifier series for small form
factor electret microphones. This 2-wire portfolio is designed
to replace the JFET amplifier currently being used. The
LMV1012 series is ideally suited for applications requiring
high signal integrity in the presence of ambient or RF noise,
such as in cellular communications. The LMV1012 audio
amplifiers are guaranteed to operate over a 2.2V to 5.0V
supply voltage range with fixed gains of 7.8 dB, 15.6 dB,
20.9 dB, and 23.8 dB. The devices offer excellent THD, gain
accuracy and temperature stability as compared to a JFET
microphone.
(Typical LMV1012-15, 2.2V supply, RL = 2.2 kΩ, C = 2.2 µF,
VIN = 18 mVPP, unless otherwise specified)
n Supply voltage
2V - 5V
< 180 µA
n Supply current
n Signal to noise ratio (A-weighted)
60 dB
n Output voltage noise (A-weighted)
−89 dBV
n Total harmonic distortion
0.09%
n Voltage gain
— LMV1012-07
7.8 dB
— LMV1012-15
15.6 dB
— LMV1012-20
20.9 dB
— LMV1012-25
23.8 dB
n Temperature range
−40˚C to 85˚C
n Offered in 4-bump micro SMD packages
The LMV1012 series enables a two-pin electret microphone
solution, which provides direct pin-to-pin compatibility with
the existing JFET market.
The devices are offered in extremely thin space saving
4-bump micro SMD packages. The LMV1012XP is designed
for 1.0 mm canisters and thicker ECM canisters. These
extremely miniature packages are designed for electret condenser microphones (ECM) form factor.
Schematic Diagram
Applications
n
n
n
n
n
n
Cellular phones
Headsets
Mobile communications
Automotive accessories
PDAs
Accessory microphone products
Built-In Gain Electret Microphone
20058702
20058701
© 2004 National Semiconductor Corporation
DS200587
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LMV1012 Analog Series Pre-Amplified IC’s for High Gain 2-Wire Microphones
August 2004
LMV1012 Analog Series
Absolute Maximum Ratings (Note 1)
Storage Temperature Range
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Junction Temperature (Note 6)
−65˚C to 150˚C
150˚C max
Mounting Temperature
Infrared or Convection (20 sec.)
235˚C
ESD Tolerance (Note 2)
Human Body Model
2500V
Machine Model
Operating Ratings (Note 1)
250V
Supply Voltage
Supply Voltage
VDD - GND
2V to 5V
Temperature Range
5.5V
−40˚C to 85˚C
2.2V Electrical Characteristics
(Note 3)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VDD = 2.2V, VIN = 18 mV, RL = 2.2 kΩ and C = 2.2 µF.
Boldface limits apply at the temperature extremes.
Symbol
IDD
SNR
VIN
VOUT
Parameter
Supply Current
Signal to Noise Ratio
Max Input Signal
Output Voltage
Typ
(Note 5)
Max
(Note 4)
LMV1012-07
139
250
300
LMV1012-15
180
300
325
LMV1012-20
160
250
300
LMV1012-25
141
250
300
LMV1012-07
59
LMV1012-15
60
LMV1012-20
61
LMV1012-25
61
Conditions
VIN = GND
f = 1 kHz, VIN = 18
mV, A-Weighted
f = 1 kHz and
THD+N < 1%
VIN = GND
Min
(Note 4)
LMV1012-07
170
LMV1012-15
100
LMV1012-20
50
LMV1012-25
28
Units
µA
dB
mVPP
LMV1012-07
1.65
1.54
1.90
2.03
2.09
LMV1012-15
1.54
1.48
1.81
1.94
2.00
LMV1012-20
1.65
1.55
1.85
2.03
2.13
LMV1012-25
1.65
1.49
1.90
2.02
2.18
V
fLOW
Lower −3dB Roll Off Frequency
RSOURCE = 50Ω
65
Hz
fHIGH
Upper −3dB Roll Off Frequency
RSOURCE = 50Ω
95
kHz
en
Output Noise
A-Weighted
THD
Total Harmonic Distortion
CIN
Input Capacitance
ZIN
Input Impedance
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f = 1 kHz,
VIN = 18 mV
2
LMV1012-07
−96
LMV1012-15
−89
LMV1012-20
−84
LMV1012-25
−82
LMV1012-07
0.10
LMV1012-15
0.09
LMV1012-20
0.12
LMV1012-25
0.15
dBV
%
2
pF
> 1000
GΩ
(Note 3) (Continued)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VDD = 2.2V, VIN = 18 mV, RL = 2.2 kΩ and C = 2.2 µF.
Boldface limits apply at the temperature extremes.
Symbol
AV
Parameter
Gain
Min
(Note 4)
Typ
(Note 5)
Max
(Note 4)
LMV1012-07
6.4
5.5
7.8
9.5
10.0
LMV1012-15
14.0
13.1
15.6
16.9
17.5
LMV1012-20
19.5
17.4
20.9
22.0
23.3
LMV1012-25
22.5
21.4
23.8
25.0
25.7
Conditions
f = 1 kHz,
RSOURCE = 50Ω
Units
dB
5V Electrical Characteristics
(Note 3)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VDD = 5V, VIN = 18 mV, RL = 2.2 kΩ and C = 2.2 µF.
Boldface limits apply at the temperature extremes.
Symbol
IDD
SNR
VIN
VOUT
Parameter
Supply Current
Signal to Noise Ratio
Max Input Signal
Output Voltage
Typ
(Note 5)
Max
(Note 4)
LMV1012-07
158
250
300
LMV1012-15
200
300
325
LMV1012-20
188
260
310
LMV1012-25
160
250
300
LMV1012-07
59
LMV1012-15
60
LMV1012-20
61
Conditions
VIN = GND
f = 1 kHz, VIN = 18
mV, A-Weighted
f = 1 kHz and
THD+N < 1%
VIN = GND
Min
(Note 4)
LMV1012-25
61
LMV1012-07
170
LMV1012-15
100
LMV1012-20
55
LMV1012-25
28
Units
µA
dB
mVPP
LMV1012-07
4.45
4.38
4.65
4.80
4.85
LMV1012-15
4.34
4.28
4.56
4.74
4.80
LMV1012-20
4.40
4.30
4.58
4.75
4.85
LMV1012-25
4.45
4.39
4.65
4.83
4.86
V
fLOW
Lower −3dB Roll Off Frequency
RSOURCE = 50Ω
67
Hz
fHIGH
Upper −3dB Roll Off Frequency
RSOURCE = 50Ω
150
kHz
en
Output Noise
A-Weighted
THD
Total Harmonic Distortion
f = 1 kHz,
VIN = 18 mV
3
LMV1012-07
−96
LMV1012-15
−89
LMV1012-20
−84
LMV1012-25
−82
LMV1012-07
0.12
LMV1012-15
0.13
LMV1012-20
0.18
LMV1012-25
0.21
dBV
%
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LMV1012 Analog Series
2.2V Electrical Characteristics
LMV1012 Analog Series
5V Electrical Characteristics
(Note 3) (Continued)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, VDD = 5V, VIN = 18 mV, RL = 2.2 kΩ and C = 2.2 µF.
Boldface limits apply at the temperature extremes.
Symbol
Parameter
CIN
Input Capacitance
ZIN
Input Impedance
AV
Gain
Conditions
Min
(Note 4)
Typ
(Note 5)
Max
(Note 4)
2
pF
> 1000
f = 1 kHz,
RSOURCE = 50Ω
Units
GΩ
LMV1012-07
6.4
5.5
8.1
9.5
10.7
LMV1012-15
14.0
13.1
15.6
16.9
17.5
LMV1012-20
19.2
17.0
21.1
22.3
23.5
LMV1012-25
22.5
21.2
23.9
25.0
25.8
dB
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Human Body Model (HBM) is 1.5 kΩ in series with 100 pF.
Note 3: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ = TA. No guarantee of parametric performance is indicated in the electrical tables under conditions of internal self-heating where TJ > TA.
Note 4: All limits are guaranteed by design or statistical analysis.
Note 5: Typical values represent the most likely parametric norm.
Note 6: The maximum power dissipation is a function of TJ(MAX) , θJA and TA. The maximum allowable power dissipation at any ambient temperature is
PD = (TJ(MAX) - TA)/θJA. All numbers apply for packages soldered directly into a PC board.
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4
LMV1012 Analog Series
Connection Diagram
4-Bump micro SMD
20058703
Top View
Note: - Pin numbers are referenced to package marking text orientation.
- The actual physical placement of the package marking will vary slightly from part to part. The package will designate the date code and will vary considerably.
Package marking does not correlate to device type in any way.
Ordering Information
Package
Part Number
4-Bump Extreme Thin
micro SMD
(0.3 mm max height)
lead free only
LMV1012XP-15
4-Bump Ultra-Thin
micro SMD
(0.4 mm max height)
lead free only
4-Bump Thin
micro SMD
(0.5 mm max height)
LMV1012XPX-15
LMV1012XP-25
Package Marking
Transport Media
Date Code
3k Units Tape and Reel
250 Units Tape and Reel
LMV1012XPX-25
3k Units Tape and Reel
LMV1012UP-07
250 Units Tape and Reel
LMV1012UPX-07
3k Units Tape and Reel
LMV1012UP-15
250 Units Tape and Reel
LMV1012UPX-15
LMV1012UP-20
Date Code
3k Units Tape and Reel
250 Units Tape and Reel
LMV1012UPX-20
3k Units Tape and Reel
LMV1012UP-25
250 Units Tape and Reel
LMV1012UPX-25
3k Units Tape and Reel
LMV1012TP-07
250 Units Tape and Reel
LMV1012TPX-07
3k Units Tape and Reel
LMV1012TP-15
250 Units Tape and Reel
LMV1012TPX-15
NSC Drawing
250 Units Tape and Reel
Date Code
3k Units Tape and Reel
LMV1012TP-25
250 Units Tape and Reel
LMV1012TPX-25
3k Units Tape and Reel
5
XPA04HLA
UPA04GKA
TPA04GKA
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LMV1012 Analog Series
Typical Performance Characteristics
Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ,
C = 2.2 µF, single supply, TA = 25˚C
Supply Current vs. Supply Voltage (LMV1012-07)
Supply Current vs. Supply Voltage (LMV1012-15)
20058704
20058718
Supply Current vs. Supply Voltage (LMV1012-20)
Supply Current vs. Supply Voltage (LMV1012-25)
20058719
20058724
Gain and Phase vs. Frequency (LMV1012-07)
Gain and Phase vs. Frequency (LMV1012-15)
20058705
20058714
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Gain and Phase vs. Frequency (LMV1012-20)
Gain and Phase vs. Frequency (LMV1012-25)
20058725
20058713
Total Harmonic Distortion vs. Frequency (LMV1012-07)
Total Harmonic Distortion vs. Frequency (LMV1012-15)
20058706
20058720
Total Harmonic Distortion vs. Frequency (LMV1012-20)
Total Harmonic Distortion vs. Frequency (LMV1012-25)
20058726
20058721
7
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LMV1012 Analog Series
Typical Performance Characteristics Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ,
C = 2.2 µF, single supply, TA = 25˚C (Continued)
LMV1012 Analog Series
Typical Performance Characteristics Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ,
C = 2.2 µF, single supply, TA = 25˚C (Continued)
Total Harmonic Distortion vs. Input Voltage
(LMV1012-07)
Total Harmonic Distortion vs. Input Voltage
(LMV1012-15)
20058707
20058722
Total Harmonic Distortion vs. Input Voltage
(LMV1012-20)
Total Harmonic Distortion vs. Input Voltage
(LMV1012-25)
20058727
20058723
Output Noise vs. Frequency (LMV1012-07)
Output Noise vs. Frequency (LMV1012-15)
20058717
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20058715
8
Output Noise vs. Frequency (LMV1012-20)
Output Noise vs. Frequency (LMV1012-25)
20058728
20058716
9
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LMV1012 Analog Series
Typical Performance Characteristics Unless otherwise specified, VS = 2.2V, RL = 2.2 kΩ,
C = 2.2 µF, single supply, TA = 25˚C (Continued)
LMV1012 Analog Series
Application Section
HIGH GAIN
The LMV1012 series provides outstanding gain versus the
JFET and still maintains the same ease of implementation,
with improved gain, linearity and temperature stability. A high
gain eliminates the need for extra external components.
BUILT IN GAIN
The LMV1012 is offered in 0.3 mm height space saving
small 4-pin micro SMD packages in order to fit inside the
different size ECM canisters of a microphone. The LMV1012
is placed on the PCB inside the microphone.
The bottom side of the PCB usually shows a bull’s eye
pattern where the outer ring, which is shorted to the metal
can, should be connected to the ground. The center dot on
the PCB is connected to the VDD through a resistor. This
phantom biasing allows both supply voltage and output signal on one connection.
20058709
FIGURE 2. A-Weighted Filter
MEASURING NOISE AND SNR
The overall noise of the LMV1012 is measured within the
frequency band from 10 Hz to 22 kHz using an A-weighted
filter. The input of the LMV1012 is connected to ground with
a 5 pF capacitor, as in Figure 3. Special precautions in the
internal structure of the LMV1012 have been taken to reduce
the noise on the output.
20058702
FIGURE 1. Built in Gain
A-WEIGHTED FILTER
The human ear has a frequency range from 20 Hz to about
20 kHz. Within this range the sensitivity of the human ear is
not equal for each frequency. To approach the hearing response weighting filters are introduced. One of those filters
is the A-weighted filter.
The A-weighted filter is usually used in signal to noise ratio
measurements, where sound is compared to device noise.
This filter improves the correlation of the measured data to
the signal to noise ratio perceived by the human ear.
20058710
FIGURE 3. Noise Measurement Setup
The signal to noise ratio (SNR) is measured with a 1 kHz
input signal of 18 mVPP using an A-weighted filter. This
represents a sound pressure level of 94 dB SPL. No input
capacitor is connected for the measurement.
SOUND PRESSURE LEVEL
The volume of sound applied to a microphone is usually
stated as a pressure level referred to the threshold of hearing of the human ear. The sound pressure level (SPL) in
decibels is defined by:
Sound pressure level (dB) = 20 log Pm/PO
Where,
Pm is the measured sound pressure
PO is the threshold of hearing (20 µPa)
In order to be able to calculate the resulting output voltage of
the microphone for a given SPL, the sound pressure in dB
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amplified which gives a bass sound. This amplification can
cause an overload, which results in a distortion of the signal.
(Continued)
SPL needs to be converted to the absolute sound pressure
in dBPa. This is the sound pressure level in decibels referred
to 1 Pascal (Pa).
The conversion is given by:
dBPa = dB SPL + 20*log 20 µPa
dBPa = dB SPL - 94 dB
Translation from absolute sound pressure level to a voltage
is specified by the sensitivity of the microphone. A conventional microphone has a sensitivity of -44 dBV/Pa.
20058712
FIGURE 5. LMV1012-15 Gain vs. Frequency Over
Temperature
The LMV1012 is optimized to be used in audio band applications. By using the LMV1012, the gain response is flat
within the audio band and has linearity and temperature
stability Figure 5.
NOISE
20058711
Noise pick-up by a microphone in cell phones is a wellknown problem. A conventional JFET circuit is sensitive for
noise pick-up because of its high output impedance, which is
usually around 2.2 kΩ.
RF noise is amongst other caused by non-linear behavior.
The non-linear behavior of the amplifier at high frequencies,
well above the usable bandwidth of the device, causes AMdemodulation of high frequency signals. The AM modulation
contained in such signals folds back into the audio band,
thereby disturbing the intended microphone signal. The
GSM signal of a cell phone is such an AM-modulated signal.
The modulation frequency of 216 Hz and its harmonics can
be observed in the audio band. This kind of noise is called
bumblebee noise.
RF noise caused by a GSM signal can be reduced by
connecting two external capacitors to ground, see Figure 6.
One capacitor reduces the noise caused by the 900 MHz
carrier and the other reduces the noise caused by 1800/
1900 MHz.
FIGURE 4. dB SPL to dBV Conversion
Example: Busy traffic is 70 dB SPL
VOUT = 70 −94 −44 = −68 dBV
This is equivalent to 1.13 mVPP
Since the LMV1012-15 has a gain of 6 (15.6 dB) over the
JFET, the output voltage of the microphone is 6.78 mVPP. By
implementing the LMV1012-15, the sensitivity of the microphone is -28.4 dBV/Pa (−44 + 15.6).
LOW FREQUENCY CUT OFF FILTER
To reduce noise on the output of the microphone a low
frequency cut off filter has been implemented. This filter
reduces the effect of wind and handling noise.
It’s also helpful to reduce the proximity effect in directional
microphones. This effect occurs when the sound source is
very close to the microphone. The lower frequencies are
11
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LMV1012 Analog Series
Application Section
LMV1012 Analog Series
Application Section
(Continued)
20058708
FIGURE 6. RF Noise Reduction
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LMV1012 Analog Series
Physical Dimensions
inches (millimeters) unless otherwise noted
NOTE: UNLESS OTHERWISE SPECIFIED.
1. FOR SOLDER BUMP COMPOSITION, SEE "SOLDER INFORMATION" IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB
PAGE (www.national.com).
2. RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD.
3. PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION.
4. XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH, X2 IS PACKAGE LENGTH AND X3 IS
PACKAGE HEIGHT.
5. REFERENCE JEDEC REGISTRATION MO-211. VARIATION CA.
4-Bump Extreme Thin micro SMD
NS Package Number XPA04HLA
X1 = 0.955 mm X2 = 1.031 mm X3 = 0.300 mm
13
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LMV1012 Analog Series
Physical Dimensions
inches (millimeters) unless otherwise noted (Continued)
NOTE: UNLESS OTHERWISE SPECIFIED.
1. TITANIUM COATING.
2. FOR SOLDER BUMP COMPOSITION, SEE "SOLDER INFORMATION" IN THE PACKAGING SECTION OF THE NATIONAL SEMICONDUCTOR WEB
PAGE (www.national.com).
3. RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD.
4. PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION.
5. XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH, X2 IS PACKAGE LENGTH AND X3 IS
PACKAGE HEIGHT.
6. REFERENCE JEDEC REGISTRATION MO-211. VARIATION CA.
4-Bump ULTRA-Thin micro SMD
NS Package Number UPA04GKA
X1 = 0.93 mm X2 = 1.006 mm X3 = 0.400 mm
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14
inches (millimeters) unless otherwise noted (Continued)
NOTE: UNLESS OTHERWISE SPECIFIED.
1. EPOXY COATING.
2. 63Sn/37Pb EUTECTIC BUMP.
3. RECOMMEND NON-SOLDER MASK DEFINED LANDING PAD.
4. PIN A1 IS ESTABLISHED BY LOWER LEFT CORNER WITH RESPECT TO TEXT ORIENTATION PINS ARE NUMBERED COUNTERCLOCKWISE.
5. XXX IN DRAWING NUMBER REPRESENTS PACKAGE SIZE VARIATION WHERE X1 IS PACKAGE WIDTH, X2 IS PACKAGE LENGTH AND X3 IS
PACKAGE HEIGHT.
6. REFERENCE JEDEC REGISTRATION MO-211. VARIATION BC.
4-Bump Thin micro SMD
NS Package Number TPA04GKA
X1 = 0.93 mm X2 = 1.006 mm X3 = 0.500 mm
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LMV1012 Analog Series Pre-Amplified IC’s for High Gain 2-Wire Microphones
Physical Dimensions
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