AON3806 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON3806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration. Standard Product AON3806is Pbfree (meets ROHS & Sony 259 specifications). AON3806L is a Green Product ordering option. AON3806 and AON3806L are electrically identical. VDS (V) = 20V ID = 7.3 A (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) RDS(ON) < 27mΩ (VGS = 4V) RDS(ON) < 32mΩ (VGS = 2.5V) ESD Rating: 2500V HBM D1 DFN 3x3 Top View Bottom View S2 D2 G2 D2 S1 D1 G1 D1 G1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TA=25°C Continuous Drain Current A Pulsed Drain Current ID IDM TA=70°C B Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Maximum 20 Units V ±12 V 30 2.2 W 1.4 TJ, TSTG °C -55 to 150 Symbol t ≤ 10s Steady-State Steady-State A 5.8 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C S2 7.3 TA=25°C Power Dissipation A D2 RθJA RθJL Typ 43 77 36 Max 56 110 50 Units °C/W °C/W °C/W AON3806 Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Min Conditions ID=250µA, VGS=0V 1 IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=4.5V, VDS=5V 30 TJ=55°C Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge 1 V A VGS=4V, ID=7.1A 22 27 mΩ VGS=2.5V, ID=6.6A 26 32 mΩ 1 V 2.5 A VDS=5V, ID=7.3A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 0.71 26 IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current Rg V 35 Forward Transconductance Crss µA 21 VSD Output Capacitance µA 29 TJ=125°C gFS Coss 5 10 VGS=4.5V, ID=7.3A IS Units V VDS=16V, VGS=0V Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 20 IDSS RDS(ON) Typ VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=10V, ID=7.3A 30 0.74 mΩ S 1390 pF 190 pF 150 pF 1.5 Ω 15.4 nC 1.4 nC Qgd Gate Drain Charge 4 nC tD(on) Turn-On DelayTime 6.2 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=5V, VDS=10V, RL=1.4Ω, RGEN=3Ω 11 ns 40.5 ns 10 ns trr Body Diode Reverse Recovery Time IF=7.3A, dI/dt=100A/µs 15 Qrr Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs 5.1 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: April 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AON3806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 30 10V 3V VDS=5V VGS =2V 4V 15 ID(A) ID(A) 20 10 10 125°C 5 VGS =1.5V 25°C 0 0 0 1 2 3 4 5 0.0 VDS(Volts) 1.0 30 1.6 Normalize ON-Resistance VGS =2.5V 25 20 VGS =4.5V 15 10 0 5 10 15 1.5 2.0 2.5 VGS(Volts) Figure 2: Transfer Characteristics Figure 1: On-Regions Characteristics RDS(ON)(mΩ) 0.5 VGS=2.5V ID=6.6A 1.4 VGS=4.5V ID=7.3A 1.2 1.0 0.8 20 0 ID(A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 60 1E+01 ID=7.3A 1E+00 125°C 1E-01 40 IS(A) RDS(ON)(mΩ) 50 125°C 30 1E-02 1E-03 25°C 20 25°C 1E-04 1E-05 10 0 2 4 6 8 VGS(Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD(Volts) Figure 6: Body-Diode Characteristics 1.0 AON3806 5 2000 4 1600 Capacitance (pF) VGS(Volts) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3 VDS=10V ID=7.3A 2 Ciss 1200 800 Crss 400 1 0 0 0 5 10 15 0 20 100.0 T J(Max)=150°C T A=25°C Power (W) 1ms 0.1s RDS(ON) limited 1s 10ms 20 0 0.001 DC 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=56°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 20 10 10s 10 15 T J(Max)=150°C T A=25°C 30 100µs 10.0 0.1 10 40 10µs 1.0 5 VDS(Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics ID (Amps) Coss In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 T on 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000