Microsemi APT15DQ60S Ultrafast soft recovery rectifier diode Datasheet

600V 15A
APT15DQ60B
APT15DQ60S
APT15DQ60BG* APT15DQ60SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(B)
PRODUCT APPLICATIONS
PRODUCT FEATURES
PRODUCT BENEFITS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
-Inverters
• Snubber Diode
• Ultrafast Recovery Times
• Low Losses
• Soft Recovery Characteristics
• Low Noise Switching
• PFC
• Avalanche Energy Rated
-2 4
7
D3PAK
1
2
• Cooler Operation
• Popular TO-247 Package or
Surface Mount D3PAK Package
• Higher Reliability Systems
• Low Forward Voltage
• Low Leakage Current
TO
2
1
(S)
2
1
• Increased System Power
Density
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol
VR
All Ratings: TC = 25°C unless otherwise specified.
Characteristic / Test Conditions
APT15DQ60B_S(G)
UNIT
600
Volts
Maximum D.C. Reverse Voltage
VRRM
Maximum Peak Repetitive Reverse Voltage
VRWM
Maximum Working Peak Reverse Voltage
IF(AV)
Maximum Average Forward Current (TC = 129°C, Duty Cycle = 0.5)
15
RMS Forward Current (Square wave, 50% duty)
30
IF(RMS)
IFSM
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
EAVL
Avalanche Energy (1A, 40mH)
TJ,TSTG
TL
Amps
110
20
mJ
-55 to 175
Operating and StorageTemperature Range
°C
300
Lead Temperature for 10 Sec.
STATIC ELECTRICAL CHARACTERISTICS
Forward Voltage
MIN
TYP
MAX
IF = 15A
2.0
2.4
IF = 30A
2.5
IF = 15A, TJ = 125°C
IRM
Maximum Reverse Leakage Current
CT
Junction Capacitance, VR = 200V
Volts
1.56
VR = 600V
25
VR = 600V, TJ = 125°C
Microsemi Website - http://www.microsemi.com
UNIT
500
25
µA
pF
7-2006
VF
Characteristic / Test Conditions
053-4200 Rev D
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT15DQ60B_S(G)
Characteristic
Test Conditions
trr
Reverse Recovery Time
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
IF = 1A, diF/dt = -100A/µs, VR = 30V, TJ = 25°C
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 15A, diF/dt = -200A/µs
Maximum Reverse Recovery Current
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
VR = 400V, TC = 25°C
Maximum Reverse Recovery Current
trr
IRRM
IF = 15A, diF/dt = -200A/µs
VR = 400V, TC = 125°C
IF = 15A, diF/dt = -1000A/µs
Maximum Reverse Recovery Current
VR = 400V, TC = 125°C
MIN
TYP
MAX
UNIT
-
15
-
19
-
21
-
2
-
105
ns
-
250
nC
-
5
-
55
ns
-
420
nC
-
15
Amps
MIN
TYP
ns
nC
-
-
Amps
Amps
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
RθJC
WT
Torque
Characteristic / Test Conditions
MAX
UNIT
1.35
°C/W
Junction-to-Case Thermal Resistance
Package Weight
0.22
oz
5.9
g
Maximum Mounting Torque
10
lb•in
1.1
N•m
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
1.20
1.00
0.7
0.80
0.5
Note:
0.3
0.40
t
0.1
0.05
10
-5
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
SINGLE PULSE
10-4
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
7-2006
TJ (°C)
053-4200 Rev D
t1
t2
0.20
0
PDM
0.60
TC (°C)
0.583
0.767
Dissipated Power
(Watts)
0.00222
ZEXT
Z JC, THERMAL IMPEDANCE (°C/W)
θ
1.40
0.0598
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
FIGURE 1b, TRANSIENT THERMAL IMPEDANCE MODEL
140
50
120
trr, REVERSE RECOVERY TIME
(ns)
60
TJ = 175°C
40
TJ = 125°C
30
20
10
0
TJ = 25°C
TJ = -55°C
0
1
2
3
4
VF, ANODE-TO-CATHODE VOLTAGE (V)
Figure 2. Forward Current vs. Forward Voltage
Qrr, REVERSE RECOVERY CHARGE
(nC)
700
R
30A
500
400
15A
300
7.5A
200
100
0
0 200 400 600 800 1000 1200 1400 1600
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
R
30A
100
15A
80
7.5A
60
40
20
0 200 400 600 800 1000 1200 1400 1600
-diF /dt, CURRENT RATE OF CHANGE(A/µs)
Figure 3. Reverse Recovery Time vs. Current Rate of Change
R
20
30A
15
10
15A
7.5A
5
0 200 400 600 800 1000 1200 1400 1600
-diF /dt, CURRENT RATE OF CHANGE (A/µs)
Figure 5. Reverse Recovery Current vs. Current Rate of Change
35
Qrr
trr
1.0
T =125°C
J
V =400V
0
Duty cycle = 0.5
T =175°C
J
30
25
0.8
IF(AV) (A)
Kf, DYNAMIC PARAMETERS
(Normalized to 1000A/µs)
1.2
IRRM
0.6
trr
0.4
Qrr
0.2
0.0
T =125°C
J
V =400V
25
T =125°C
J
V =400V
600
APT15DQ60B_S(G)
0
IRRM, REVERSE RECOVERY CURRENT
(A)
IF, FORWARD CURRENT
(A)
TYPICAL PERFORMANCE CURVES
20
15
10
5
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature
0
25
50
75
100
125
150
175
Case Temperature (°C)
Figure 7. Maximum Average Forward Current vs. CaseTemperature
80
70
60
50
7-2006
40
30
20
10
0
1
10
100 200
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
053-4200 Rev D
CJ, JUNCTION CAPACITANCE
(pF)
90
APT15DQ60B_S(G)
Vr
diF /dt Adjust
+18V
APT6017LLL
0V
D.U.T.
30µH
trr/Qrr
Waveform
PEARSON 2878
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
IF - Forward Conduction Current
2
diF /dt - Rate of Diode Current Change Through Zero Crossing.
3
IRRM - Maximum Reverse Recovery Current.
4
trr - Reverse Recovery Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 IRRM passes through zero.
5
1
4
Zero
5
0.25 IRRM
3
2
Qrr - Area Under the Curve Defined by IRRM and trr.
Figure 10, Diode Reverse Recovery Waveform and Definitions
3
D PAK Package Outline
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
20.80 (.819)
21.46 (.845)
Cathode
7-2006
053-4200 Rev D
e3 100% Sn
Cathode
(Heat Sink)
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
0.40 (.016)
0.65 (.026)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
1.00 (.039)
1.15(.045)
0.020 (.001)
0.250 (.010)
2.70 (.106)
2.90 (.114)
1.15 (.045)
1.45 (.057)
1.20 (.047)
1.90 (.075) 1.40 (.055)
2.10 (.083)
5.45 (.215) BSC
(2 Plcs.)
Anode
2.21 (.087)
2.59 (.102)
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
13.30 (.524)
13.60(.535)
12.40 (.488)
12.70 (.500)
18.70 (.736)
19.10 (.752)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
15.85 (.624)
16.05(.632)
Anode
Cathode
Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.40 (.094)
2.70 (.106)
(Base of Lead)
Heat Sink (Cathode)
and Leads
are Plated
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