LRC L2SC4617ST1G General purpose transistors npn silicon Datasheet

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
z We declare that the material of product compliance with RoHS requirements.
L2SC4617QT1G
Series
ORDERING INFORMATION
Device
Marking
Shipping
L2SC4617QT1G
BQ
3000 Tape & Reel
L2SC4617QT3G
BQ
10000 Tape & Reel
L2SC4617RT1G
BR
3000 Tape & Reel
L2SC4617RT3G
BR
10000 Tape & Reel
L2SC4617ST1G
BS
3000 Tape & Reel
L2SC4617ST3G
BS
10000 Tape & Reel
SC-89
COLLECTOR
3
!Absolute maximum ratings (Ta=25°C)
Symbol
Limits
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
0.15
A
Collector power
dissipation
PC
0.15
W
Parameter
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
−55~+150
˚C
1
BASE
2
EMITTER
!Electrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
60
−
−
V
IC=50µA
Collector-emitter breakdown voltage
BVCEO
50
−
−
V
IC=1 mA
Emitter-base breakdown voltage
BVEBO
7
−
−
V
IE=50µA
Conditions
Collector cutoff current
ICBO
−
−
0.1
µA
VCB=60V
Emitter cutoff current
IEBO
−
−
0.1
µA
VEB=7V
VCE(sat)
−
−
0.5
V
IC/IB=50mA/5mA
hFE
120
−
560
−
VCE=6V, IC=1mA
Transition frequency
fT
−
180
−
MHz
Output capacitance
Cob
−
2.0
3.5
pF
Collector-emitter saturation voltage
DC current transfer ratio
VCE=12V, IE=2mA, f=30MHz
VCB=12V, IE=0A, f=1MHz
!Device marking
L2SC4617QT1G=BQ
L2SC4617RT1G=BR
L2SC4617ST1G=BS
! hFE values are classified as follows:
Item
Q
R
S
hFE
120~270
180~390
270~560
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
L2SC4617QT1G
Series
!Electrical characterristic curves
COLLECTOR CURRENT : IC (mA)
2
1
0.5
0.2
0.25mA
60
0.20mA
0.15mA
40
0.10mA
20
0.05mA
IB=0A
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Fig.1
Fig.2
Grounded emitter propagation
characteristics
1.2
DC CURRENT GAIN : hFE
VCE=5V
3V
1V
100
50
20
2
5
10 20
50 100 200
1.6
2.0
VCE=5V
25°C
200
−55°C
100
50
20
10
0.2
27µA
8
0.5 1
2
5
10 20
50 100 200
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current ( Ι )
Fig.5 DC current gain vs.
collector current ( ΙΙ )
24µA
21µA
6
18µA
15µA
12µA
4
9µA
6µA
2
3µA
4
IB=0A
12
8
16
20
COLLECTOR TO EMITTER VOLTAGE : V CE (V)
Grounded emitter output
characteristics ( Ι )
Ta=100°C
200
0.5 1
0.8
500
Ta=25°C
10
0.2
0.4
30µA
Ta=25°C
0
0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
BASE TO EMITTER VOLTAGE : VBE (V)
DC CURRENT GAIN : hFE
0.30mA
0
0.1
0
500
80
10
Fig.3
COLLECTOR SATURATION VOLTAGE : V CE(sat) (V)
5
25°C
−55°C
10
Ta=100°C
COLLECTOR CURRENT : IC (mA)
20
0.50mA
mA
0.45 A
0.40m
m
0.35 A
Ta=25°C
VCE=6V
COLLECTOR CURRENT : I C (mA)
100
50
Grounded emitter output
characteristics ( ΙΙ )
0.5
Ta=25°C
0.2
IC/IB=50
20
10
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
COLLECTOR CURRENT : IC (mA)
Fig. 6 Collector-emitter saturation
voltage vs. collector current
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
IC/IB=10
0.2
Ta=100°C
25°C
−55°C
0.1
0.05
0.02
0.01
0.2
0.5 1
2
5
10
20
50 100 200
0.5
IC/IB=50
Ta=100°C
25°C
−55°C
0.2
0.1
0.05
0.02
0.01
0.2
COLLECTOR CURRENT : IC (mA)
5
Co
b
1
0.2
0.5
1
2
5
10
20
50
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.10
Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Ta=25°C
f=1MHz
IE=0A
IC=0A
2
2
5
10
20
50 100
Ta=25°C
VCE=6V
500
200
100
50
−0.5 −1
−2
−5
−10 −20
−50 −100
EMITTER CURRENT : IE (mA)
Fig.8 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
20
Cib
0.5 1
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( Ι )
10
TRANSITION FREQUENCY : fT (MHz)
0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
L2SC4617QT1G
Series
Fig.9 Gain bandwidth product vs.
emitter current
Ta=25°C
f=32MHZ
VCB=6V
200
100
50
20
10
−0.2
−0.5
−1
−2
−5
−10
EMITTER CURRENT : IE (mA)
Fig.11 Base-collector time constant
vs. emitter current
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
L2SC4617QT1G
Series
SC-89
A
-X-
3
1
2
B -Y-
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 463C-01 OBSOLETE, NEW STANDARD 463C-02.
S
K
G
2 PL
D
0.08 (0.003)
M
DIM
A
B
C
D
G
H
J
K
L
M
N
S
3 PL
X Y
N
M
C
J
-T-
H
MILLIMETERS
MIN
NOM
MAX
1.50
1.60
1.70
0.75
0.85
0.95
0.60
0.70
0.80
0.23
0.28
0.33
0.50 BSC
0.53 REF
0.10
0.15
0.20
0.30
0.40
0.50
1.10 REF
−−−
−−−
10 −−−
−−−
10 1.50
1.60
1.70
MIN
0.059
0.030
0.024
0.009
0.004
0.012
−−−
−−−
0.059
INCHES
NOM
0.063
0.034
0.028
0.011
0.020 BSC
0.021 REF
0.006
0.016
0.043 REF
−−−
−−−
0.063
MAX
0.067
0.040
0.031
0.013
0.008
0.020
10 10 0.067
SEATING
PLANE
H
L
G
RECOMMENDED PATTERN
OF SOLDER PADS
Rev.O 4/4
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