Central CMPT2369 TM Semiconductor Corp. DESCRIPTION: NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT2369 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for ultra high speed switching applications. Marking Code is C1J. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCES VCEO VEBO IC PD TJ,Tstg ΘJA UNITS V V V V mA mW 40 40 15 4.5 500 350 oC oC/W -65 to +150 357 ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICBO BVCBO BVCES BVCEO BVEBO VCE(SAT) VBE(SAT) hFE hFE Cob fT ts ton toff TEST CONDITIONS MIN VCB=20V VCB=20V, TA=125oC IC=10µA 40 IC=10µA 40 IC=10mA 15 IE=10µA 4.5 IC=10mA, IB=1.0mA IC=10mA, IB=1.0mA 0.7 VCE=1.0V, IC=10mA 40 VCE=2.0V, IC=100mA 20 VCB=5.0V, IE=0, f=1.0MHz VCE=10V, IC=10mA, f=100MHz 500 VCC=3.0V, IC=IB1=IB2=10mA VCC=3.0V, IC=10mA, IB1=3.0mA VCC=3.0V, IC=10mA, IB1=3.0mA, IB2=1.5mA 160 MAX 0.4 30 0.25 0.85 120 4.0 13 12 18 UNITS µA µA V V V V V V pF MHz ns ns ns All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 161