Transistors SMD Type PNP Transistors BC856~BC858 (KC856~KC858) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 ■ Features 1 0.55 ● For Switching and AF Amplifier Applications +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Ideally suited for automatic insertion 0.4 3 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 +0.1 0.97 -0.1 +0.05 0.1 -0.01 1.Base 0-0.1 +0.1 0.38 -0.1 2.Emitter 3.collector ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol BC856 BC857 BC858 Collector - Base Voltage VCBO -80 -50 -30 Collector - Emitter Voltage VCEO -65 -45 -30 Emitter - Base Voltage VEBO -5 Unit V Collector Current - Continuous IC -100 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 Tstg -55 to 150 Storage Temperature range ℃ www.kexin.com.cn 1 Transistors SMD Type PNP Transistors BC856~BC858 (KC856~KC858) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Collector- base breakdown voltage BC856 Ic= -100 μA， IE=0 -30 BC856 -65 VCEO Ic= -1mA， IB=0 Max V -30 Emitter - base breakdown voltage VEBO -5 IE= -100μA， IC=0 BC856 VCB= -70 V , IE=0 ICBO BC857 VCB= -45 V , IE=0 BC858 VCB= -25 V , IE=0 BC856 VCE= -55 V , IE=0 BC857 -100 nA -1 uA nA ICEO VCE= -40 V , IE=0 IEBO VEB= -5V , IC=0 -100 VCE= -25 V , IE=0 BC858 Emitter cut-off current Collector-emitter saturation voltage VCE(sat) IC=-100 mA, IB=-5mA -0.5 Base - emitter saturation voltage VBE(sat) IC=-100 mA, IB=-5mA -1.1 DC current gain BC856A,857A,858A BC856B,857B,858B VCE= -5V, IC= -2mA hFE BC857C,858C Collector output capacitance 125 250 220 475 420 800 VCB= -10V, f=1MHz Cob Transition frequency 4.5 VCE= -5V, IC= -10mA,f=100MHz fT 100 Type BC856A BC856B BC857A BC857B BC857C BC858A BC858B BC858C Range 125-250 220-475 125-250 220-475 420-800 125-250 220-475 420-800 Marking 3A 3B 3E 3F 3G 3J 3K 3L www.kexin.com.cn V pF MHz ■ Classification of hfe 2 Unit -45 BC858 Collector- emittercut-off current Typ -50 BC858 BC857 Collector-base cut-off current Min -80 VCBO BC857 Collector- emitter breakdown voltage Test Conditions Transistors SMD Type PNP Transistors BC856~BC858 (KC856~KC858) ■ Typical Characterisitics Static Characteristic (mA) -3.5 -10uA -9.0uA -3.0 COLLECTOR CURRENT DC CURRENT GAIN IC -7.0uA -6.0uA -2.0 -5.0uA -1.5 -4.0uA -3.0uA -1.0 —— IC COMMON EMITTER VCE= -5V Ta=100℃ -8.0uA -2.5 hFE 600 COMMON EMITTER Ta=25℃ hFE -4.0 400 Ta=25℃ 200 -2.0uA -0.5 -0.0 IB=-1.0uA -0 -2 -4 -6 -8 -10 COLLECTOR-EMITTER VOLTAGE VCEsat —— 0 -0.1 -12 -1 -10 COLLECTOR CURRENT (V) IC VBEsat —— -1000 -100 IC (mA) IC -800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1000 VCE Ta=100 ℃ -100 Ta=25℃ Ta=25℃ -600 Ta=100 ℃ -400 β=20 β=20 -10 -0.1 -1 -10 COLLECTOR CURREMT IC -100 —— IC -200 -0.1 -100 -1 -10 COLLECTOR CURREMT (mA) VBE Cob/Cib 100 —— IC -100 (mA) VCB/VEB f=1MHz IE=0/IC=0 (pF) T= a 25 ℃ CAPACITANCE C -10 T= a 1 00 ℃ COLLECTOR CURRENT IC (mA) Ta=25 ℃ -1 Cib 10 Cob COMMON EMITTER VCE= -5V -0.1 -0 -300 -600 -900 1 -0.1 -1200 -1 fT —— IC COLLECTOR POWER DISSIPATION PC (mW) fT TRANSITION FREQUENCY PC 250 (MHz) 300 200 100 VCE=-5V -10 REVERSE VOLTAGE BASE-EMMITER VOLTAGE VBE (mV) —— V -20 (V) Ta 200 150 100 50 o Ta=25 C 0 -0 -4 -8 -12 COLLECTOR CURRENT -16 IC (mA) -20 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta 125 150 (℃) www.kexin.com.cn 3