RoHS MMST3904 MMST3904 TRANSISTOR (NPN) SOT-323 1. BASE 2. EMITTER 0.2 W (Tamb=25℃) D T ,. L 1. 01 REF PCM: 1. 25¡ À0. 05 3. COLLECTOR Collector current BASE 2. 30¡ À0. 05 1. 30¡ À0. 03 ICM: 0.2 A Collector-base voltage V(BR)CBO: 60 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO R T Collector cut-off current IC C O 2. 00¡ À0. 05 Power dissipation 0. 30 FEATURES Unit: mm unless otherwise specified) Test O conditions N MIN MAX UNIT Ic= 10µA, IE=0 60 V Ic= 1 mA, IB=0 40 V IE= 10µA, IC=0 5 V VCB= 60V, IE=0 0.1 µA VCE= 40V, IB=0 0.1 µA IEBO VEB= 5V, IC=0 0.1 µA hFE(1) VCE= 1V, IC= 10mA 100 hFE(2) VCE= 1V, IC= 50mA 60 Collector-emitter saturation voltage VCE(sat) IC=50 mA, IB= 5mA 0.3 V Base-emitter saturation voltage VBE(sat) IC= 50 mA, IB= 5mA 0.95 V ICBO Collector cut-off current ICEO C E L Emitter cut-off current DC current gain J E E Transition frequency Output Capacitance fT Cob W VCE= 20V, IC= 10mA f=100MHz VCB=5V, IE= 0 f=1MHz Delay time td VCC=3V, VBE=0.5V Rise time tr IC=10mA , IB1=1mA Storage time tS VCC=3V, IC=10mA Fall time tf IB1= IB2= 1mA Marking 300 250 MHz 4 pF 35 nS 35 nS 200 nS 50 nS K2N WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:[email protected]