Central CMPT6428 CMPT6429 TM Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT6428, CMPT6429 types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high gain amplifier applications. Marking Codes are C1K and C1L Respectively. SOT-23 CASE MAXIMUM RATINGS (TA=25oC) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg ΘJA CMPT6428 60 50 CMPT6429 55 45 6.0 200 350 -65 to +150 357 UNITS V V V mA mW oC oC/W ELECTRICAL CHARACTERISTICS (TA=25oC unless otherwise noted) SYMBOL ICBO ICEO IEBO BVCBO BVCEO VCE(SAT) VCE(SAT) VBE(ON) hFE hFE hFE hFE fT CMPT6428 TEST CONDITIONS MIN MAX VCB=30V 10 VCE=30V 100 VBE=5.0V 10 IC=100µA 60 IC=1.0mA 50 IC=10mA, IB=0.5mA 0.20 IC=100mA, IB=5.0mA 0.60 VCE=5.0V, IC=1.0mA 0.56 0.66 VCE=5.0V, IC=10µA 250 VCE=5.0V, IC=100µA 250 650 VCE=5.0V, IC=1.0mA 250 VCE=5.0V, IC=10mA 250 VCE=5.0V, IC=1.0mA, f=100MHz 100 700 190 CMPT6429 MIN MAX 10 100 10 55 45 0.20 0.60 0.56 0.66 500 500 1250 500 500 100 700 UNITS nA nA nA V V V V V MHz SYMBOL Cob Cib TEST CONDITIONS VCB=10V, IE=0, f=1.0MHz VBE=0.5V, IC=0, f=1.0MHz CMPT6428 MIN MAX 3.0 8.0 CMPT6429 MIN MAX 3.0 8.0 UNITS pF pF All dimensions in inches (mm). LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR R2 191