IXYS IXGP24N60C Hiperfast igbt lightspeed sery Datasheet

HiPerFASTTM IGBT
LightspeedTM Series
Symbol
Test Conditions
IXGA 24N60C
IXGP 24N60C
Maximum Ratings
VCES
TJ = 25°C to 150°C
600
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MΩ
600
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
TC = 25°C
48
A
IC110
TC = 110°C
24
A
ICM
TC = 25°C, 1 ms
96
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 22 Ω
Clamped inductive load, L = 100 µH
PC
TC = 25°C
VCES
IC25
VCE(sat)typ
tfi typ
TO-220 AB (IXGP)
C (TAB)
G
C E
TO-263 AA (IXGA)
ICM = 48
@ 0.8 VCES
A
150
W
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
G = Gate,
E = Emitter,
300
°C
Features
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
G
z
Md
Mounting torque (M3)
1.13/10 Nm/lb.in.
Weight
TO-263
TO-220
2
4
g
g
z
z
z
z
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IC
= 250 µA, VGE = 0 V
600
VGE(th)
IC
= 250 µA, VCE = VGE
2.5
ICES
VCE = 0.8 • VCES
VGE = 0 V
IGES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC110, VGE = 15 V
© 2002 IXYS All rights reserved
V
TJ = 25°C
TJ = 150°C
2.1
5
V
200
1
µA
mA
±100
nA
2.5
V
E
C (TAB)
C = Collector,
TAB = Collector
International standard packages
JEDEC TO-247 and surface
mountable TO-268
High frequency IGBT
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Applications
z
z
BVCES
= 600 V
= 48 A
= 2.1 V
= 60 ns
z
z
z
z
PFC circuits
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
z
z
High power density
Very fast switching speeds for high
frequency applications
98936 7/02)
IXGA 24N60C
IXGP 24N60C
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
17
S
1500
pF
120
pF
Cres
40
pF
Qg
55
nC
13
nC
17
nC
gfs
IC = IC110; VCE = 10 V,
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies
Coes
Qge
VCE = 25 V, VGE = 0 V, f = 1 MHz
9
IC = IC110, VGE = 15 V, VCE = 0.5 VCES
Qgc
Inductive load, TJ = 25°°C
15
ns
tri
IC = IC110, VGE = 15 V, L = 100 µH,
VCE = 0.8 VCES, RG = Roff = 10 Ω
25
ns
75
140
ns
60
110
ns
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
0.24
0.36
mJ
td(on)
Inductive load, TJ = 125°°C
tfi
tri
Eon
td(off)
tfi
Eoff
IC = IC110, VGE = 15 V, L = 100 µH
VCE = 0.8 VCES, RG = Roff = 10 Ω
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
15
ns
25
ns
0.15
mJ
130
ns
110
ns
0.6
mJ
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
1 - Gate
3 - Emitter
Bottom Side
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-263 AA Outline
0.83 K/W
RthJC
RthCK
Pins:
2 - Collector
4 - Collector
Dim.
td(on)
td(off)
TO-220 AB Outline
0.25
K/W
Min. Recommended Footprint
(Dimensions in inches and mm)
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Botton Side
Dim.
Millimeter
Min.
Max.
Inches
Min. Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
7.11
9.65
8.13
.340
.280
.380
.320
E
E1
e
9.65
6.86
2.54
10.29
8.13
BSC
.380
.270
.100
.405
.320
BSC
L
L1
L2
L3
L4
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.38
.575
.090
.040
.050
0
.625
.110
.055
.070
.015
R
0.46
0.74
.018
.029
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715 6,306,728B1
5,381,025
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