ON MJ10015 Npn silicon power darlington transistor Datasheet

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SEMICONDUCTOR TECHNICAL DATA
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50 AMPERE
NPN SILICON
POWER DARLINGTON
TRANSISTORS
400 AND 500 VOLTS
250 WATTS
The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,
high–speed, power switching in inductive circuits where fall time is critical. They are
particularly suited for line–operated switchmode applications such as:
•
•
•
•
•
Switching Regulators
Motor Controls
Inverters
Solenoid and Relay Drivers
Fast Turn–Off Times
1.0 µs (max) Inductive Crossover Time — 20 Amps
2.5 µs (max) inductive Storage Time — 20 Amps
• Operating Temperature Range –65 to + 200_C
• Performance Specified for
Reversed Biased SOA with Inductive Load
Switching Times with Inductive Loads
Saturation Voltages
Leakage Currents
≈ 50
CASE 197–05
TO–204AE TYPE
(TO–3 TYPE)
≈8
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v
MAXIMUM RATINGS
Rating
Symbol
MJ10015
MJ10016
Unit
Collector–Emitter Voltage
VCEO
400
500
Vdc
Collector–Emitter Voltage
VCEV
600
700
Vdc
Emitter Base Voltage
VEB
8.0
Vdc
Collector Current — Continuous
— Peak (1)
IC
ICM
50
75
Adc
Base Current — Continous
— Peak (1)
IB
IBM
10
15
Adc
Total Power Dissipation @ TC = 25_C
@ TC = 100_C
Derate above 25_C
PD
250
143
1.43
Watts
TJ, Tstg
– 65 to + 200
_C
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
0.7
_C/W
TL
275
_C
Operating and Storage Junction Temperature Range
W/_C
THERMAL CHARACTERISTICS
Maximum Lead Temperature for Soldering Purposes:
1/8″ from Case for 5 Seconds
(1) Pulse Test: Pulse Width = 5 ms, Duty Cycle
10%.
SWITCHMODE is a trademark of Motorola, Inc.
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
400
500
—
—
—
—
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Sustaining Voltage (Table 1)
(IC = 100 mA, IB = 0, Vclamp = Rated VCEO)
VCEO(sus)
MJ10015
MJ10016
Vdc
Collector Cutoff Current
(VCEV = Rated Value, VBE(off) = 1.5 Vdc)
ICEV
—
—
0.25
mAdc
Emitter Cutoff Current
(VEB = 2.0 Vdc, IC = 0)
IEBO
—
—
350
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
Clamped Inductive SOA with Base Reverse Biased
IS/b
See Figure 7
RBSOA
See Figure 8
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 20 Adc, VCE = 5.0 Vdc)
(IC = 40 Adc, VCE = 5.0 Vdc)
hFE
—
25
10
—
—
—
—
—
—
—
—
2.2
5.0
Collector–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
(IC = 50 Adc, IB = 10 Adc)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = 20 Adc, IB = 1.0 Adc)
VBE(sat)
—
—
2.75
Vdc
Vf
—
2.5
5.0
Vdc
Cob
—
—
750
pF
td
—
0.14
0.3
µs
tr
—
0.3
1.0
µs
ts
—
0.8
2.5
µs
tf
—
0.3
1.0
µs
tsv
—
1.0
2.5
µs
tc
—
0.36
1.0
µs
Diode Forward Voltage (2)
(IF = 20 Adc)
Vdc
DYNAMIC CHARACTERISTIC
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)
SWITCHING CHARACTERISTICS
Resistive Load (Table 1)
Delay Time
Rise Time
Storage Time
(VCC = 250 Vdc, IC = 20 A,
IB1 = 1.0 Adc, VBE(off) = 5 Vdc, tp = 25 µs
2%).
Duty Cycle
Fall Time
Inductive Load, Clamped (Table 1)
Storage Time
Crossover Time
(IC = 20 A(pk), Vclamp = 250 V, IB1 = 1.0 A,
VBE(off) = 5.0 Vdc)
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2%.
(2) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.
(2) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.
2
Motorola Bipolar Power Transistor Device Data
TYPICAL CHARACTERISTICS
2.4
2.0
50
TC = 25°C
VCE = 5.0 V
20
IC/IB = 10
V, VOLTAGE (VOLTS)
hFE, DC CURRENT GAIN
100
1.6
1.2
TJ = 25°C
10
0.8
TJ = 150°C
5.0
0.5
1.0
2.0
5.0
10
20
IC, COLLECTOR CURRENT (AMPS)
0.4
50
Figure 1. DC Current Gain
0.5
10
2.0
5.0
IC, COLLECTOR CURRENT (AMP)
1.0
20
50
Figure 2. Collector–Emitter Saturation Voltage
104
2.8
VCE = 250 V
IC/IB = 10
2.0
TJ = 25°C
1.6
1.2
0.8
0.5
TJ = 150°C
1.0
2.0
5.0
103
IC, COLLECTOR CURRENT ( µA)
V, VOLTAGE (VOLTS)
2.4
10
20
50
TJ = 125°C
102
100°C
75°C
101
REVERSE
FORWARD
100
25°C
10–1
– 0.2
0
+ 0.2
+ 0.4
+ 0.6
IC, COLLECTOR CURRENT (AMP)
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 3. Base–Emitter Saturation Voltage
Figure 4. Collector Cutoff Region
+ 0.8
C ob , OUTPUT CAPACITANCE (pF)
1500
1000
TJ = 25°C
500
300
200
100
0.4
1.0
100
4.0 10
40
VR, REVERSE VOLTAGE (VOLTS)
400
Figure 5. Output Capacitance
Motorola Bipolar Power Transistor Device Data
3
Table 1. Test Conditions for Dynamic Performance
VCEO(sus)
VCEX AND INDUCTIVE SWITCHING
RESISTIVE SWITCHING
INDUCTIVE TEST CIRCUIT
TURN–ON TIME
20 Ω
1
INPUT
CONDITIONS
1
5V
2
TUT
0
1
INPUT
2
SEE ABOVE FOR
DETAILED CONDITIONS
CIRCUIT
VALUES
PW Varied to Attain
IC = 100 mA
TEST CIRCUITS
RS =
0.1 Ω
TURN–OFF TIME
Use inductive switching
driver as the input to
the resistive test circuit.
Rcoil
1N4937
OR
EQUIVALENT
SEE ABOVE FOR
DETAILED CONDITIONS
IC(pk)
Lcoil
Vclamp
VCC = 250 V
RL = 12.5 Ω
Pulse Width = 25 µs
OUTPUT WAVEFORMS
TUT
t
pk
)
TUT
VCC
1
Lcoil (IC
t2 ≈
VCC
TIME
Lcoil (IC
t1 ≈
tf
VCE or
Vclamp
RESISTIVE TEST CIRCUIT
t1 Adjusted to
Obtain IC
tf Clamped
t
t1
RS =
0.1 Ω
2
IB1 adjusted to
obtain the forced
hFE desired
VCC
Lcoil = 180 µH
Rcoil = 0.05 Ω
VCC = 20 V
INDUCTIVE TEST CIRCUIT
INPUT
IB1
Lcoil
Vclamp
2
Lcoil = 10 mH, VCC = 10 V
Rcoil = 0.7 Ω
Vclamp = VCEO(sus)
1
Rcoil
1N4937
OR
EQUIVALENT
pk
)
2
VClamp
RL
VCC
Test Equipment
Scope — Tektronix
475 or Equivalent
t2
* Adjust – V such that VBE(off) = 5 V except as required for RBSOA (Figure 8).
IC pk
Vclamp
90% Vclamp
IC
tsv
90% IC
trv
tfi
tti
and hammer drivers, current and voltage waveforms are not
in phase. Therefore, separate measurements must be made
on each waveform to determine the total switching time. For
this reason, the following new terms have been defined.
tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp
trv = Voltage Rise Time, 10 – 90% Vclamp
tfi = Current Fall Time, 90 – 10% IC
tti = Current Tail, 10 – 2% IC
tc = Crossover Time, 10% Vclamp to 10% IC
For the designer, there is minimal switching loss during
storage time and the predominant switching power losses
occur during the crossover interval and can be obtained using the standard equation from AN–222:
ā
tc
VCE
IB
10% Vclamp
90% IB1
ā
10%
IC pk
ā
2% IC
ā
TIME
PSWT = 1/2 VCC IC (tc) f
Figure 6. Inductive Switching Measurements
In general, t rv + t fi
t c. However, at lower test currents
this relationship may not be valid.
As is common with most switching transistors, resistive
switching is specified and has become a benchmark for designers. However, for designers of high frequency converter
circuits, the user oriented specifications which make this a
“SWITCHMODE” transistor are the inductive switching
speeds (tc and tsv) which are guaranteed.
SWITCHING TIMES NOTE
In resistive switching circuits, rise, fall, and storage times
have been defined and apply to both current and voltage
waveforms since they are in phase. However, for inductive
loads which are common to SWITCHMODE power supplies
4
ā
ā
^
Motorola Bipolar Power Transistor Device Data
The Safe Operating Area figures shown in Figures 7 and 8 are
specified ratings for these devices under the test conditions
shown.
IC, COLLECTOR CURRENT (AMPS)
50
20
10
5.0
dc
MJ10015
MJ10016
TC = 25°C
0.2
0.1
0.05
0.02
0.01
0.005
1.0
BONDING WIRE LIMIT
THERMAL LIMIT (SINGLE PULSE)
SECOND BREAKDOWN LIMIT
2.0
20
500 1000
5.0 10
50 100 200
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 7. Forward Bias Safe Operating Area
IC, COLLECTOR CURRENT (AMPS)
50
40
TURN–OFF LOAD LINE
BOUNDARY FOR MJ10016
THE LOCUS FOR MJ10015
IS 100 V LESS
30
u 10
20
IC
IB1
10
VBE(off) = 5.0 V
TC = 25°C
0
0
200
300
400
100
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
FORWARD BIAS
There are two Iimitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation,
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25_C; T J(pk) is
variable depending on power level. Second breakdown pulse
limits are valid for duty cycles to 10% but must be derated
when TC ≥ 25_C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the
voltages shown on Figure 7 may be found at any case temperature by using the appropriate curve on Figure 9.
10 µs
2.0
1.0
0.5
SAFE OPERATING AREA INFORMATION
REVERSE BIAS
For inductive loads, high voltage and high current must be
sustained simultaneously during turn–off, in most cases, with
the base to emitter junction reverse biased. Under these
conditions the collector voltage must be held to a safe level
at or below a specific value of collector current. This can be
accomplished by several means such as active clamping,
RC snubbing, load line shaping, etc. The safe level for these
devices is specified as Reverse Bias Safe Operating Area
and represents the voltage–current condition allowable during reverse biased turn–off. This rating is verified under
clamped conditions so that the device is never subjected to
an avalanche mode. Figure 8 gives the complete RBSOA
characteristics.
500
Figure 8. Reverse Bias Switching Safe
Operating Area
10
9
FORWARD BIAS
SECOND BREAKDOWN
DERATING
80
IB2(pk) , BASE CURRENT (AMP)
POWER DERATING FACTOR (%)
100
60
THERMAL
DERATING
40
20
8
7
6
5
IC = 20 A
4
3
2
SEE TABLE 1 FOR CONDITIONS,
FIGURE 6 FOR WAVESHAPE.
1
0
0
40
80
120
TC, CASE TEMPERATURE (°C)
160
Figure 9. Power Derating
Motorola Bipolar Power Transistor Device Data
200
0
0
1
2
3
4
5
6
7
8
VBE(off), REVERSE BASE VOLTAGE (VOLTS)
Figure 10. Typical Reverse Base Current
versus VBE(off) With No External Base
Resistance
5
PACKAGE DIMENSIONS
A
N
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C
–T–
E
K
SEATING
PLANE
DIM
A
B
C
D
E
G
H
K
L
N
Q
U
D 2 PL
0.25 (0.010)
U
M
T Q
M
Y
M
L
–Q–
–Y–
2
H
G
B
INCHES
MIN
MAX
1.510
1.550
0.980
1.050
0.250
0.335
0.057
0.063
0.060
0.135
0.420
0.440
0.205
0.225
0.440
0.480
0.655
0.675
0.760
0.830
0.151
0.175
1.177
1.197
MILLIMETERS
MIN
MAX
38.35
39.37
24.89
26.67
6.35
8.51
1.45
1.60
1.52
3.43
10.67
11.18
5.21
5.72
11.18
12.19
16.64
17.15
19.30
21.08
3.84
4.19
29.90
30.40
1
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
CASE 197–05
TO–204AE TYPE
(TO–3 TYPE)
ISSUE J
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6
◊
Motorola Bipolar Power Transistor Device Data
*MJ10015/D*
MJ10015/D
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