Renesas HAT2033RJ Silicon n channel power mos fet high speed power switching Datasheet

HAT2033R, HAT2033RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
REJ03G1165-0400
(Previous: ADE-208-664B)
Rev.4.00
Sep 07, 2005
Features
•
•
•
•
For Automotive Application (at Type Code “J”)
Low on-resistance
Capable of 4 V gate drive
High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
5 6 7 8
D D D D
65
87
1, 2, 3
4
5, 6, 7, 8
4
G
12
34
S S S
1 2 3
Rev.4.00 Sep 07, 2005 page 1 of 7
Source
Gate
Drain
HAT2033R, HAT2033RJ
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Symbol
VDSS
Value
60
Unit
V
VGSS
ID
±20
7
V
A
56
7
A
A
—
7
—
A
Note 4
—
4.2
—
mJ
Note 2
2.5
150
W
°C
ID (pulse)
IDR
Avalanche current
HAT2033R
HAT2033RJ
IAP
Avalanche energy
HAT2033R
HAT2033RJ
EAR
Channel dissipation
Channel temperature
Note 1
Note 4
Pch
Tch
°C
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain
HAT2033R
current
HAT2033RJ
Zero gate voltage drain
HAT2033R
current
HAT2033RJ
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
60
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
Test Conditions
IGSS
IDSS
—
—
—
—
±10
1
µA
µA
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
IDSS
IDSS
—
—
—
—
0.1
—
µA
µA
IDSS
—
—
10
2.2
µA
V
VDS = 10 V, ID = 1 mA
VDS = 48 V, VGS = 0
Ta = 125°C
Gate to source cutoff voltage
VGS (off)
—
1.2
Static drain to source on state resistance
RDS (on)
RDS (on)
—
—
0.03
0.04
0.038
0.053
Ω
Ω
ID = 4 A, VGS = 10 V
Note 4
ID = 4 A, VGS = 4 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
6.5
—
10
740
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
370
130
—
—
pF
pF
ID = 4 A, VDS = 10 V
VDS = 10 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
13
55
—
—
ns
ns
VGS = 10 V, ID = 4 A,
VDD ≅ 30 V
Turn-off delay time
Fall time
td (off)
tf
—
—
140
95
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
0.82
45
1.07
—
V
ns
Note:
4. Pulse test
Rev.4.00 Sep 07, 2005 page 2 of 7
Note 4
IF = 7 A, VGS = 0
IF = 7 A, VGS = 0
diF/dt = 50 A/µs
Note 4
Note 4
HAT2033R, HAT2033RJ
Main Characteristics
Maximum Safe Operation Area
Power vs. Temperature Derating
100
3.0
2.0
1.0
10 µs
10
30
ID (A)
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
Drain Current
Channel Dissipation
Pch (W)
4.0
PW
0
50
100
3
1
0.3
0.1
Ta = 25°C
1 shot Pulse
1 Drive Operation
Ambient Temperature
0.01
0.1
200
150
0.3
1
3
10
Drain to Source Voltage
Ta (°C)
s
1m
=1
s
DC
0m
s(
Op
1s
er
ho
at
t)
ion
(
PW No
Operation in
≤ 1 te 5
this area is
0
s)
limited by RDS (on)
10
0.03
0
0µ
30
100
VDS (V)
Note 5:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
Typical Output Characteristics
6V
4.5 V
40
30
4V
20
3.5 V
10
20
VDS = 10 V
Pulse Test
(A)
Pulse Test
16
ID
10 V
12
3V
Drain Current
Drain Current
ID
(A)
50
8
25°C
Tc = 75°C
4
–25°C
VGS = 2.5 V
0
0
0
2
4
6
8
10
0
Pulse Test
0.4
0.3
0.2
ID = 5 A
0.1
2A
1A
0
0
4
8
12
Gate to Source Voltage
Rev.4.00 Sep 07, 2005 page 3 of 7
16
20
VGS (V)
3
4
5
VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain to Source on State Resistance
RDS (on) (Ω)
Drain to Source Voltage
VDS (on) (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.5
2
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
1
0.5
Pulse Test
0.2
0.1
VGS = 4 V
0.05
10 V
0.02
0.01
0.1 0.2
0.5 1
2
Drain Current
5
10 20
ID (A)
50
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance
RDS (on) (Ω)
HAT2033R, HAT2033RJ
0.10
Pulse Test
0.08
5A
ID = 1, 2 A
0.06
VGS = 4 V
0.04
1, 2, 5 A
0.02
10 V
0
–40
0
40
80
120
Case Temperature
Tc
160
50
Tc = –25°C
20
10
25°C
5
75°C
2
1
VDS = 10 V
Pulse Test
0.5
0.1
0.3
Capacitance C (pF)
20
Ciss
500
Coss
200
100
Crss
50
VGS = 0
f = 1 MHz
10
0.3
1
3
10
30
0
100
10
20
30
40
50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Switching Characteristics
16
80
60 VDS
VDD = 50 V
25 V
10 V
VGS
12
8
40
20
4
VDD = 50 V
25 V
10 V
0
8
16
Gate Charge
Rev.4.00 Sep 07, 2005 page 4 of 7
24
0
32
Qg (nc)
40
1000
Switching Time t (ns)
20
ID = 7 A
VGS (V)
VDS (V)
1000
20
Gate to Source Voltage
Reverse Recovery Time trr (ns)
50
10
0.1
Drain to Source Voltage
100
2000
100
0
30
5000
200
100
10
Typical Capacitance vs.
Drain to Source Voltage
di / dt = 50 A / µs
VGS = 0, Ta = 25°C
500
3
Drain Current ID (A)
(°C)
Body-Drain Diode Reverse
Recovery Time
1000
1
300
td(off)
100
tf
30
tr
td(on)
10
3
1
0.1
VGS = 4 V, VDD = 30 V
PW = 3 µs, duty ≤ 1 %
0.3
1
3
Drain Current
10
30
ID (A)
100
HAT2033R, HAT2033RJ
Maximum Avalanche Energy vs.
Channel Temperature Derating
Repetitive Avalanche Energy EAR (mJ)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current IDR (A)
20
16
10 V
12
5V
VGS = 0, –5 V
8
4
Pulse Test
0
0
0.4
0.8
1.2
1.6
Source to Drain Voltage
2.0
5
IAP = 7 A
VDD = 25 V
L = 100 µH
duty < 0.1 %
Rg ≥ 50 Ω
4
3
2
1
0
25
VSD (V)
50
75
100
125
150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
D=1
1
0.5
0.2
0.1
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 83.3°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.02
0.01
0.01
0.001
ot
h
1s
0.0001
10 µ
D=
PDM
lse
pu
100 µ
PW
T
PW
T
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Avalanche Test Circuit
VDS
Monitor
Avalanche Waveform
L
EAR =
1
• L • IAP2 •
2
VDSS
VDSS – VDD
IAP
Monitor
Rg
V(BR)DSS
IAP
D.U.T
VDD
VDS
ID
Vin
15 V
50 Ω
0
Rev.4.00 Sep 07, 2005 page 5 of 7
VDD
HAT2033R, HAT2033RJ
Switching Time Test Circuit
Switching Time Waveform
90%
Vout
Monitor
Vin Monitor
D.U.T.
Vin
10%
RL
Vout
Vin
10 V
50 Ω
VDD
= 30 V
10%
90%
td(on)
Rev.4.00 Sep 07, 2005 page 6 of 7
10%
tr
90%
td(off)
tf
HAT2033R, HAT2033RJ
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
1
c
*2 E
Index mark
HE
5
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
HAT2033R-EL-E
HAT2033RJ-EL-E
Quantity
2500 pcs
2500 pcs
Shipping Container
Taping
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.4.00 Sep 07, 2005 page 7 of 7
Sales Strategic Planning Div.
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