Mitsubishi MGFC41V7177 7.1 - 7.7ghz band 12w internally matched gaas fet Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V7177
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
DESCRIPTION
OUTLINE DRAWING
Unit: millimeters (inches)
24+ /-0.3
R1.25
(1)
0.6+/-0.15
2 MIN
The MGFC41V7177 is an internally impedence matched
GaAs power FET especially designed for use in 7.1 - 7.7
GHz band amplifiers. The hermetically sealed metal-ceramic
package guarantees high raliability.
FEATURES
Internally matched to 50ohm system
High output power
P1dB = 12W (TIP.) @ f=7.1 - 7.7 Hz
High power gain
GLP = 9.5 dB (TYP.) @ f=7.1 - 7.7 GHz
High power added efficiency
Eadd = 33 % (TYP.) @ f=7.1 - 7.7 GHz
Low Distortion[Item-51]
IM3=-45 dBc(TYP.)@Po=30dBm S.C.L.
(3)
13.4
4 .0 + /-0 .4
0 .1
7.1 - 7.7GHz band amplifiers
QUALITY GRADE
1 .4
IG
RECOMMENDED BIAS CONDITIONS
(1): GATE
(2): SOURCE (FLANGE)
(3): DRAIN
GF-18
Refer to Bias Procedure
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
Unit
Gate to drain voltage
-15
V
Gate to source voltage
-15
V
Drain current
12
A
IGR
Reverse gate current
-30
mA
IGF
Forward gate current
63
mA
PT
Total power dissipation *1
53.6
W
Tch
Channel temperature
175
DegreesC
Tstg
Storage temperature
-65 to +175
DegreesC
VGDO
VGSO
ID
Parameter
*1 : Tc=25 DegreesC
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Limits
Test conditions
Min
Unit
Typ
Max
IDSS
Saturated drain current
VDS = 3V , VGS = 0V
-
-
12
A
gm
Transconductance
VDS = 3V , ID = 3.0A
-
3
-
S
VDS = 3V , ID = 30mA
-
-
-5
V
40
41
-
dBm
dB
VGS(off)
P1dB
GLP
Gate to source cut-off voltage
Output power at 1dB gain
compression
Linear power gain
2 .4 + /-0 .2
20.4+ /-0.2
APPLICATION
VDS = 10V
ID = 3.4 A
Rg = 50(ohm)
1 5 .8
8 .0 + /-0 .2
(2)
2 MIN
1 7 .4 +/-0 .3
R1.2
7
8
-
Eadd
Power added efficiency
VDS = 10V , ID = 3.4A , f = 7.1 - 7.7 GHz
-
30
-
%
IM3 *2
3rd order IM distortion
-42
-45
-
dBc
Rth(ch-c)
Thermal resistance *1
-
-
2.8
C/W
Delta Vf method
*1 : Channel to case
*2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=7.7GHz,Delta f=10MHz
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V7177
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS
VDS=10V
UDS=3.4A
42
Po , P.A.E. vs. Pin
18
100
45
VDS=10V
IDS=3.4A
f=7.4GHz
16
Output power Po (dBm)
Output power P1dB (dBm)
40
P1dB
14
41
40
12
39
10
GLP
6
37
7.0
7.1
7.2
7.3 7.4 7.5 7.6
Frequency (GHz)
7.7
35
60
30
40
P.A.
E
25
8
38
80
Po
20
0
20
7.8
Power added efficiency P.A.E. (%)
P1dB,GLP vs. Freq.
43
15
20
25
30
35
Input power Pin (dBm)
40
Po,IM3 vs. Pin
0
VDS=10V
IDS=3.4A
F1=7.70GHz
f2=7.71GHz
2-tone test
34
32
-10
Po
-20
-30
30
IM3
28
-40
26
-50
IM3 (dBc)
Output power Po (dBm S.C.L.)
36
-60
24
15
17
19
21
23
25
27
Input power Pin (dBm S.C.L.)
S parameters
f
(GHz)
7.10
7.20
7.30
7.40
7.50
7.60
7.70
Magn.
0.510
0.450
0.380
0.290
0.180
0.060
0.130
29
( Ta=25deg.C , VDS=10(V),IDS=3.4(A) )
S11
Angle(deg)
66.000
57.000
48.000
40.000
34.000
59.000
146.000
Magn.
2.600
2.600
2.640
2.650
2.670
2.640
2.570
S-Parameter (TYP.)
S21
S12
Angle(deg)
Magn.
Angle(deg)
-131.000
0.066
172.000
-146.000
0.073
160.000
-161.000
0.079
146.000
-177.000
0.085
133.000
167.000
0.092
118.000
149.000
0.094
103.000
131.000
0.097
86.000
Magn.
0.220
0.220
0.220
0.210
0.180
0.130
0.070
S22
Angle(deg)
106.000
89.000
71.000
53.000
38.000
20.000
-13.000
Oct-01
MITSUBISHI
ELECTRIC
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFC41V7177
7.1 - 7.7GHz BAND 12W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
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