MOTOROLA MAC4DCN Triacs 4.0 amperes rms 600 thru 800 volt Datasheet

MOTOROLA
Order this document
by MAC4DCM/D
SEMICONDUCTOR TECHNICAL DATA
MAC4DCM
MAC4DCN
TRIACS
Silicon Bidirectional Thyristors
Motorola Preferred Devices
Designed for high volume, low cost, industrial and consumer applications
such as motor control; process control; temperature, light and speed control.
• Small Size Surface Mount DPAK Package
• Passivated Die for Reliability and Uniformity
• Blocking Voltage to 800 V
MT2
• On–State Current Rating of 4.0 Amperes RMS at 108°C
TRIACS
4.0 AMPERES RMS
600 thru 800 VOLTS
• High Immunity to dv/dt — 500 V/s at 125°C
• High Immunity to di/dt — 6.0 A/ms at 125°C
G
ORDERING INFORMATION
• To Obtain “DPAK” in Surface Mount Leadform (Case 369A)
Shipped in Sleeves — No Suffix, i.e. MAC4DCN
Shipped in 16 mm Tape and Reel — Add “T4” Suffix to Device Number,
i.e. MAC4DCNT4
• To Obtain “DPAK” in Straight Lead Version (Case 369) Shipped in Sleeves —
Add “–1” Suffix to Device Number, i.e. MAC4DCN–1
MT2
MT1
MT1
MT2
G
CASE 369A–13
STYLE 6
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Rating
Peak Repetitive Off–State Voltage (1)
(TJ = –40 to 125°C, Sine Wave, 50 to 60 Hz, Gate Open)
Value
VDRM
MAC4DCM
MAC4DCN
On–State RMS Current
(Full Cycle Sine Wave, 60 Hz, TC = 108°C)
Peak Non–Repetitive Surge Current
(One Full Cycle, 60 Hz, TJ = 125°C)
Circuit Fusing Consideration (t = 8.3 msec)
Peak Gate Power
(Pulse Width ≤ 10 sec, TC = 108°C)
Average Gate Power
(t = 8.3 msec, TC = 108°C)
Unit
Volts
600
800
IT(RMS)
Amps
4.0
ITSM
40
I2t
6.6
PGM
A2sec
Watts
0.5
PG(AV)
0.1
Peak Gate Current (Pulse Width ≤ 10 sec, TC = 108°C)
IGM
0.5
Amps
Peak Gate Voltage (Pulse Width ≤ 10 sec, TC = 108°C)
VGM
5.0
Volts
TJ
–40 to 125
°C
Tstg
–40 to 150
Symbol
Max
Unit
RJC
RJA
RJA
3.5
88
80
°C/W
Operating Junction Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance — Junction to Case
Thermal Resistance — Junction to Ambient
Thermal Resistance — Junction to Ambient (2)
Maximum Lead Temperature for Soldering Purposes (3)
TL
260
°C
(1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the
voltage ratings of the device are exceeded.
(2) Surface mounted on minimum recommended pad size.
(3) 1/8″ from case for 10 seconds.
Preferred devices are Motorola recommended choices for future use and best overall value.
Motorola Thyristor Device Data
 Motorola, Inc. 1997
1
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Characteristics
Peak Repetitive Blocking Current
(VD = Rated VDRM, Gate Open)
Min
Typ
Max
—
—
—
—
0.01
2.0
—
1.3
1.6
8.0
8.0
8.0
12
18
22
35
35
35
0.5
0.5
0.5
0.2
0.8
0.8
0.8
0.4
1.3
1.3
1.3
—
6.0
22
35
—
—
—
30
50
20
60
80
60
Min
Typ
Max
6.0
8.4
—
500
1700
—
IDRM
TJ = 25°C
TJ = 125°C
Peak On–State Voltage (1)
(ITM = ± 6.0 A)
mA
VTM
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
MT2(+), G(+); MT2(+), G(–); MT2(–), G(–)
TJ = 125°C
Volts
IGT
mA
VGT
Holding Current
(VD = 12 V, Gate Open, IT = ± 200 mA)
IH
Latching Current (VD = 12 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(–)
MT2(–), G(–)
IL
Unit
Volts
mA
mA
DYNAMIC CHARACTERISTICS
Characteristics
Rate of Change of Commutating Current (1)
(VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/msec, Gate Open,
TJ = 125°C, f = 250 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber)
See Figure 15
Critical Rate of Rise of Off–State Voltage
(VD = 0.67 X Rated VDRM, Exponential Waveform,
Gate Open, TJ = 125°C)
Symbol
di/dt(c)
Unit
A/ms
dv/dt
V/ms
(1) Pulse test: Pulse Width ≤ 2.0 msec, Duty Cycle ≤ 2%.
2
Motorola Thyristor Device Data
P(AV) , AVERAGE POWER DISSIPATION (WATTS)
125
a = 30°
120
60°
90°
115
α
α
110
120°
a = CONDUCTION ANGLE
180°
dc
105
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
α
120°
α
4.0
90°
a = CONDUCTION ANGLE
3.0
2.0
60°
a = 30°
1.0
0
0
1.0
2.0
3.0
4.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
Figure 2. On–State Power Dissipation
TYPICAL @ TJ = 25°C
MAXIMUM @ TJ = 125°C
10
MAXIMUM @ TJ = 25°C
1.0
0.1
1.0
0
2.0
4.0
3.0
1.0
0.1
ZqJC(t) = RqJC(t)Sr(t)
0.01
0.1
5.0
1.0
10
100
1000
10 k
VT, INSTANTANEOUS ON–STATE VOLTAGE (VOLTS)
t, TIME (ms)
Figure 3. On–State Characteristics
Figure 4. Transient Thermal Response
1.2
VGT, GATE TRIGGER VOLTAGE(VOLTS)
60
I GT, GATE TRIGGER CURRENT (mA)
dc
180°
5.0
IT(RMS), RMS ON–STATE CURRENT (AMPS)
100
50
40
30
Q3
Q2
20
Q1
10
0
–50
6.0
4.0
r(t) , TRANSIENT RESISTANCE (NORMALIZED)
I T, INSTANTANEOUS ON–STATE CURRENT (AMPS)
TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( °C)
1.0
0.8
Q1
Q2
Q3
0.6
0.4
0.2
0
–25
0
25
50
75
100
125
–50
–25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Gate Trigger Current versus
Junction Temperature
Figure 6. Typical Gate Trigger Voltage versus
Junction Temperature
Motorola Thyristor Device Data
125
3
60
120
50
100
IL, LATCHING CURRENT (mA)
IH , HOLDING CURRENT (mA)
MT2 POSITIVE
40
30
20
MT2 NEGATIVE
10
0
–50
Q2
80
60
Q1
40
Q3
20
0
–25
0
25
50
75
125
100
–25
–50
0
25
50
75
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Typical Holding Current versus
Junction Temperature
Figure 8. Typical Latching Current versus
Junction Temperature
15 K
10 K
TJ = 125°C
TJ = 125°C
VPK = 400 V
6.0 K
STATIC dv/dt (V/ m s)
STATIC dv/dt (V/ ms)
8.0 K
VPK = 400 V
600 V
4.0 K
125
100
800 V
10 K
600 V
800 V
5.0 K
2.0 K
0
0
100
1000
10 K
Figure 9. Exponential Static dv/dt versus
Gate–MT1 Resistance, MT2(+)
Figure 10. Exponential Static dv/dt versus
Gate–MT1 Resistance, MT2(–)
14 K
12 K
TJ = 100°C
GATE OPEN
GATE OPEN
STATIC dv/dt (V/ m s)
8.0 K
STATIC dv/dt (V/ ms)
10 K
RGK, GATE–MT1 RESISTANCE (OHMS)
10 K
6.0 K
110°C
4.0 K
125°C
2.0 K
TJ = 100°C
10 K
8.0 K
110°C
6.0 K
125°C
4.0 K
2.0 K
0
0
400
4
1000
100
RGK, GATE–MT1 RESISTANCE (OHMS)
500
600
700
800
400
500
600
700
VPK, PEAK VOLTAGE (VOLTS)
VPK, PEAK VOLTAGE (VOLTS)
Figure 11. Exponential Static dv/dt versus
Peak Voltage, MT2(+)
Figure 12. Exponential Static dv/dt versus
Peak Voltage, MT2(–)
800
Motorola Thyristor Device Data
10 K
14 K
GATE OPEN
12 K
GATE OPEN
VPK = 400 V
VPK = 400 V
STATIC dv/dt (V/ ms)
STATIC dv/dt (V/ ms)
8.0 K
6.0 K
600 V
4.0 K
800 V
10 K
8.0 K
600 V
6.0 K
800 V
4.0 K
2.0 K
2.0 K
0
0
100
105
110
115
120
125
100
105
110
115
120
TJ, JUNCTION TEMPERATURE (°C)
TJ, JUNCTION TEMPERATURE (°C)
Figure 13. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(+)
Figure 14. Typical Exponential Static dv/dt
versus Junction Temperature, MT2(–)
125
100
dv/dt(c), CRITICAL RATE OF RISE OF
COMMUTATING VOLTAGE (V/ ms)
VPK = 400 V
TJ = 125°C
75°C
100°C
10
f=
tw
1
2 tw
6f I
(di/dt)c = TM
1000
VDRM
1.0
0
5.0
10
15
20
25
30
35
di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms)
Figure 15. Critical Rate of Rise of
Commutating Voltage
Motorola Thyristor Device Data
5
LL
200 VRMS
ADJUST FOR
ITM, 60 Hz VAC
MEASURE
I
TRIGGER
CHARGE
CONTROL
NON-POLAR
CL
TRIGGER CONTROL
CHARGE
1N4007
–
+
400 V
2
1N914 51
G
1
Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage
6
Motorola Thyristor Device Data
PACKAGE DIMENSIONS
–T–
C
B
V
E
R
4
Z
A
S
1
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
3
U
K
F
J
L
H
D
2 PL
G
0.13 (0.005)
M
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
–––
0.030
0.050
0.138
–––
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
–––
0.77
1.27
3.51
–––
T
CASE 369A–13
ISSUE Y
Motorola Thyristor Device Data
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
STYLE 6:
PIN 1.
2.
3.
4.
MT1
MT2
GATE
MT2
7
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8
◊
Motorola Thyristor Device
Data
MAC4DCM/D
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