HP AT-42000 Up to 6 ghz medium power up to 6 ghz medium power Datasheet

Up to 6 GHz Medium Power
Silicon Bipolar Transistor Chip
Technical Data
AT-42000
Features
• High Output Power:
21.0 dBm Typical P1 dB at 2.0␣ GHz
20.5 dBm Typical P1 dB at 4.0␣ GHz
• High Gain at 1 dB
Compression:
15.0 dB Typical G1 dB at 2.0␣ GHz
10.0 dB Typical G1 dB at 4.0␣ GHz
• Low Noise Figure: 1.9 dB
Typical NFO at 2.0 GHz
• High Gain-Bandwidth
Product: 9.0 GHz Typical fT
Description
Hewlett-Packard’s AT-42000 is a
general purpose NPN bipolar
transistor chip that offers excellent high frequency performance.
The 4 micron emitter-to-emitter
pitch enables this transistor to be
used in many different functions.
The 20 emitter finger interdigitated
geometry yields a medium sized
transistor with impedances that
are easy to match for low noise
and medium power applications.
This device is designed for use in
low noise, wideband amplifier,
mixer and oscillator applications
in the VHF, UHF, and microwave
frequencies. An optimum noise
match near 50 Ω up to 1 GHz ,
makes this device easy to use as a
low noise amplifier.
Chip Outline
The AT-42000 bipolar transistor is
fabricated using Hewlett-Packard’s
10 GHz fT Self-Aligned-Transistor
(SAT) process. The die is nitride
passivated for surface protection.
Excellent device uniformity,
performance and reliability are
produced by the use of ionimplantation, self-alignment
techniques, and gold metalization
in the fabrication of this device.
The recommended assembly
procedure is gold-eutectic die
attach at 400oC and either wedge
or ball bonding using 0.7 mil gold
wire. See APPLICATIONS section,
“Chip Use”.
4-149
5965-8909E
AT-42000 Absolute Maximum Ratings
Symbol
VEBO
VCBO
VCEO
IC
PT
Tj
TSTG
Parameter
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Power Dissipation [2,3]
Junction Temperature
Storage Temperature
Absolute
Maximum[1]
1.5
20
12
80
600
200
-65 to 200
Units
V
V
V
mA
mW
°C
°C
Part Number Ordering Information
Part Number
Devices Per Tray
AT-42000-GP4
100
Thermal Resistance [2,4]:
θjc = 70°C/W
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface = 25°C.
3. Derate at 14.3 mW/°C for
TMounting Surface > 158°C.
4. The small spot size of this technique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Electrical Specifications, TA = 25°C
Symbol
Parameters and Test Conditions[1]
Units
Min.
Typ. Max.
|S21E|2
Insertion Power Gain; VCE = 8 V, IC = 35 mA
f = 2.0 GHz
f = 4.0 GHz
dB
11.5
5.5
P1 dB
f = 2.0 GHz
f= 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
dBm
G1 dB
Power Output @ 1 dB Gain Compression
VCE = 8 V, IC = 35 mA
1 dB Compressed Gain; VCE = 8 V, IC = 35 mA
21.0
20.5
15.0
10.0
NFO
Optimum Noise Figure: VCE = 8 V, IC = 10 mA
dB
GA
Gain @ NFO; VCE = 8 V, IC = 10 mA
f = 2.0 GHz
f = 4.0 GHz
f = 2.0 GHz
f = 4.0 GHz
fT
Gain Bandwidth Product: VCE = 8 V, IC = 35 mA
hFE
ICBO
IEBO
CCB
Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA
Collector Cutoff Current; VCB = 8 V
Emitter Cutoff Current; VEB = 1 V
Collector Base Capacitance[2]: VCB = 8 V, f = 1 MHz
Notes:
1. RF performance is determined by packaging and testing 10 devices per wafer.
2. For this test, the emitter is grounded.
4-150
dB
1.9
3.0
14.0
10.5
dB
GHz
—
µA
µA
pF
9.0
30
150
0.23
270
0.2
2.0
AT-42000 Typical Performance, TA = 25°C
24
20
4.0 GHz
P1dB
16
20
10 V
20
1.0 GHz
6V
16
4V
P1dB
12
16
|S21E|2 GAIN (dB)
2.0 GHz
P1 dB (dBm)
2.0 GHz
G1dB
4.0 GHz
8
0
10
20
30
40
16
10 V
14
6V
4V
0
10
IC (mA)
4.0 GHz
20
30
40
0
50
0
10
20
12
40
50
Figure 3. Insertion Power Gain vs.
Collector Current and Frequency.
VCE = 8 V.
Figure 2. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Voltage. f = 2.0 GHz.
13
30
IC (mA)
IC (mA)
Figure 1. Output Power and 1 dB
Compressed Gain vs. Collector
Current and Frequency. VCE = 8 V.
40
24
35
21
30
18
GA
10 V
11
6V
10
4V
9
8
7
GAIN (dB)
|S21E|2 GAIN (dB)
4
G1dB
10
50
8
12
MSG
25
GAIN (dB)
4
G1 dB (dB)
G1 dB (dB)
12
2.0 GHz
12
20
MAG
15
|S21E|2
10
20
30
40
50
IC (mA)
Figure 4. Insertion Power Gain vs.
Collector Current and Voltage.
f = 2.0 GHz.
12
4
9
3
10
6
5
3
0
0
15
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
Figure 5. Insertion Power Gain,
Maximum Available Gain and
Maximum Stable Gain vs. Frequency.
VCE = 8 V, IC = 35 mA.
4-151
0
0.5
2
NFO
1
1.0
2.0
0
3.0 4.0 5.0
FREQUENCY (GHz)
Figure 6. Noise Figure and Associated
Gain vs. Frequency.
VCE = 8 V, IC = 10mA.
NFO (dB)
P1 dB (dBm)
24
AT-42000 Typical Scattering Parameters,
Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 10 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.70
-50
28.0
25.19
155
0.5
.67
-136
20.9
11.04
108
1.0
.66
-166
15.7
6.08
90
1.5
.66
-173
12.1
4.02
86
2.0
.66
179
9.8
3.09
82
2.5
.67
170
7.8
2.46
74
3.0
.67
165
6.3
2.08
68
3.5
.70
157
5.1
1.80
61
4.0
.70
151
3.9
1.56
57
4.5
.71
145
2.9
1.40
51
5.0
.73
138
1.9
1.24
41
5.5
.74
132
1.2
1.15
36
6.0
.76
129
0.2
1.02
32
dB
-37.7
-30.5
-28.9
-28.2
-27.5
-26.0
-24.7
-23.4
-21.8
-20.7
-19.3
-17.2
-16.3
S12
Mag.
.013
.030
.036
.039
.042
.050
.058
.068
.081
.092
.109
.138
.154
Ang.
71
43
47
52
57
66
72
77
82
86
87
88
87
Mag.
.92
.57
.50
.48
.47
.47
.47
.47
.48
.50
.51
.51
.53
S22
dB
-40.9
-34.4
-30.5
-27.7
-25.4
-23.6
-22.1
-20.6
-19.7
-18.3
-17.5
-16.5
-15.7
S12
Mag.
.009
.019
.030
.041
.054
.066
.079
.093
.104
.121
.133
.149
.164
Ang.
65
58
70
76
79
82
82
84
86
86
85
86
85
Mag.
.79
.42
.38
.38
.38
.38
.38
.39
.40
.41
.42
.41
.44
Ang.
-14
-27
-24
-23
-23
-23
-26
-28
-30
-34
-38
-50
-56
AT-42000 Typical Scattering Parameters,
Common Emitter, Z O = 50 Ω, TA = 25°C, VCE = 8 V, IC␣ =␣ 35 mA
Freq.
S11
S21
GHz
Mag.
Ang.
dB
Mag.
Ang.
0.1
.49
-96
33.0
44.61
143
0.5
.62
-163
22.8
13.87
98
1.0
.63
179
17.2
7.25
86
1.5
.63
171
13.5
4.74
78
2.0
.65
163
11.2
3.62
72
2.5
.65
159
9.3
2.90
67
3.0
.68
154
7.8
2.44
60
3.5
.67
148
6.5
2.12
57
4.0
.69
144
5.3
1.83
51
4.5
.70
139
4.4
1.65
47
5.0
.70
137
3.3
1.46
43
5.5
.72
131
2.7
1.36
38
6.0
.74
128
1.7
1.22
34
A model for this device is available in the DEVICE MODELS section.
AT-42000 Noise Parameters: VCE = 8 V, IC = 10 mA
Freq.
GHz
NFO
dB
0.1
0.5
1.0
2.0
4.0
1.0
1.1
1.5
1.9
3.0
Γopt
Mag
.04
.05
.09
.23
.47
Ang
13
69
127
171
-154
4-152
RN/50
0.13
0.13
0.12
0.11
0.14
S22
Ang.
-24
-26
-22
-23
-25
-27
-29
-32
-34
-40
-44
-48
-55
AT-42000 Chip Dimensions
30 µm
DIA
1.18 mil
Base Pad
90 µm
3.54 mil
305 µm
12 mil
Emitter Pad
305 µm
12 mil
Note: Die thickness is 5 to 6 mil.
4-153
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