IXYS DSEP60-04 Hiperfredtm epitaxial diode with soft recovery Datasheet

DSEP 60-04A
HiPerFREDTM Epitaxial Diode
IFAV = 60 A
VRRM = 400 V
trr = 30 ns
with soft recovery
VRSM
VRRM
V
V
400
400
Type
A
C
TO-247 AD
C
DSEP 60-04A
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
TC = 120°C; rectangular, d = 0.5
IFSM
TVJ = 45°C; tp = 10 ms (50 Hz), sine
EAS
IAR
70
60
A
A
600
A
TVJ = 25°C; non-repetitive
IAS = 3.5 A; L = 180 µH
1.6
mJ
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.4
A
-55...+175
175
-55...+150
°C
°C
°C
230
W
0.8...1.2
Nm
6
g
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque
Weight
typical
Symbol
Conditions
IR
①
VF ②
Characteristic Values
typ.
max.
TVJ = 25°C; VR = VRRM
TVJ = 150°C;VR = VRRM
650
2
µA
mA
IF = 60 A;
1.01
1.24
V
V
0.65
K/W
K/W
TVJ = 150°C
TVJ = 25°C
RthJC
RthCH
0.25
t rr
IF = 1 A; -di/dt = 300 A/µs;
VR = 30 V; TVJ = 25°C
30
IRM
VR = 100 V; IF = 130 A; -diF/dt = 100 A/µs
TVJ = 100°C
6.0
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
ns
7.5
A
Features
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see Outlines.pdf
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
311
Data according to IEC 60747 and per diode unless otherwise specified
1-2
DSEP 60-04A
100
3000
A
nC
2500
80
IF
VR = 200 V
IF = 120 A
IF = 120 A
40
IF = 60 A
IF = 30 A
IF = 60 A
IF = 30 A
30
IRM
Qr
TVJ = 100°C
1500
TVJ = 25°C
TVJ = 100°C
VR = 200 V
50
2000
TVJ = 150°C
60
70
A
60
TVJ = 100°C
40
1000
20
20
500
0
0.0
0.4
0.8
1.2 V
VF
10
0
100
1.6
Fig. 1 Forward current IF versus VF
0
A/µs 1000
-diF/dt
Fig. 2 Typ. reverse recovery charge Qr
160
2.0
50
400
600 A/µs
800 1000
-diF/dt
1.80
µs
tfr
V
VR = 200 V
40
trr
Kf
200
Fig. 3 Typ. peak reverse current IRM
TVJ = 100°C
ns
140
1.5
0
IF = 120 A
120
VFR
VFR
30
IF = 60 A
IF = 30 A
1.75
tfr
1.70
100
1.0
TVJ = 100°C
20
IRM
IF = 60 A
80
1.65
0.5
Qr
10
60
40
0.0
0
40
80
0
0
120 °C 160
200
400
TVJ
600 A/µs
800
1000
-diF/dt
Fig. 4 Typ. dynamic parameters Qr, IRM
1.60
Fig. 5 Typ. recovery time trr versus -diF/dt
0
200
400
1.55
600 A/µs
800 1000
diF/dt
Fig. 6 Typ. peak forward voltage
VFR and tfr
10
K/W
1
ZthJC
0.1
0.01
0.001
0.0001
DSEP 60-04A
0.001
0.01
s
0.1
1
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
311
Fig. 7 Transient thermal resistance junction to case
2-2
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