STMicroelectronics IRF620FI N - channel enhancement mode power mos transistor Datasheet

IRF620
IRF620FI
N - CHANNEL ENHANCEMENT MODE
POWER MOS TRANSISTORS
TYPE
IRF620
IRF620FI
■
■
■
■
V DSS
R DS( on)
ID
200 V
200 V
< 0.8 Ω
< 0.8 Ω
6A
4A
TYPICAL RDS(on) = 0.55 Ω
AVALANCHE RUGGED TECHNOLOGY
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
3
APPLICATIONS
■
HIGH CURRENT, HIGH SPEED SWITCHING
■
UNINTERRUPTIBLE POWER SUPPLY (UPS)
■
MOTOR CONTROL, AUDIO AMPLIFIERS
■
INDUSTRIAL ACTUATORS
■
DC-DC & DC-AC CONVERTERS FOR
TELECOM, INDUSTRIAL AND CONSUMER
ENVIRONMENT
1
3
2
2
1
TO-220
ISOWATT220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
IRF620
VD S
V DG R
V GS
Drain-source Voltage (V GS = 0)
200
200
V
Gate-source Voltage
± 20
V
Drain Current (cont.) at Tc = 25 oC
ID
o
P tot
Drain Current (cont.) at Tc = 100 C
Drain Current (pulsed)
Total Dissipation at Tc = 25 o C
Derating Factor
V ISO
T stg
Tj
V
Drain- gate Voltage (R GS = 20 kΩ)
ID
ID M(•)
Unit
IRF620FI
Insulation Withstand Voltage (DC)
Storage Temperature
Max. Operating Junction Temperature
6
4
A
4
2
A
24
24
A
70
30
W
0.56
0.24
W/ o C

2000
V
-65 to 150
o
C
150
o
C
(•) Pulse width limited by safe operating area
November 1996
1/9
IRF620/FI
THERMAL DATA
R thj-cas e
Rthj- amb
R th c-s
Tl
Thermal Resistance Junction-case
TO-220
ISOWATT220
1.79
4.17
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
o
C/W
62.5
0.5
300
o
C/W
C/W
o
C
Max Value
Unit
o
AVALANCHE CHARACTERISTICS
Symbol
Parameter
IA R
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T j max, δ < 1%)
6
A
E AS
Single Pulse Avalanche Energy
(starting T j = 25 o C, ID = I AR, VD D = 25 V)
20
mJ
E AR
Repetitive Avalanche Energy
(pulse width limited by T j max, δ < 1%)
5
mJ
IA R
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100 o C, pulse width limited by T j max, δ < 1%)
4
A
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
OFF
Symbol
V( BR)DSS
Parameter
Drain-source
Breakdown Voltage
Test Conditions
I D = 250 µA
VG S = 0
I DS S
Zero Gate Voltage
V DS = Max Rating
Drain Current (V GS = 0) V DS = Max Rating x 0.8
IG SS
Gate-body Leakage
Current (V D S = 0)
Min.
Typ.
Max.
200
Unit
V
10
100
µA
µA
± 100
nA
Max.
Unit
3
4
V
0.55
0.8
Ω
T c = 125 oC
V GS = ± 20 V
ON (∗)
Symbol
Parameter
Test Conditions
V G S(th)
Gate Threshold Voltage V DS = V GS
ID = 250 µA
R DS( on)
Static Drain-source On
Resistance
V GS = 10V
ID = 3 A
I D( on)
On State Drain Current
V DS > ID( on) x RD S(on) max
Min.
2
VG S = 10 V
Typ.
6
A
DYNAMIC
Symbol
gfs (∗)
C iss
C oss
C rss
2/9
Parameter
Test Conditions
Forward
Transconductance
V DS > ID( on) x RD S(on) max
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V DS = 25 V
f = 1 MHz
ID = 3 A
VG S = 0
Min.
Typ.
1.5
3.5
460
90
20
Max.
Unit
S
600
120
30
pF
pF
pF
IRF620/FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING RESISTIVE LOAD
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t d(on)
tr
t d(off )
tf
Turn-on Time
Rise Time
Turn-off Delay Time
Fall Time
V DD = 100 V I D = 3 A
VGS = 10 V
R G = 50 Ω
(see test circuit)
30
70
135
45
45
100
190
65
ns
ns
ns
ns
Qg
Q gs
Q gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I D = 6 A V GS = 10 V
V DD = Max Rating x 0.8
(see test circuit)
20
6
8
30
nC
nC
nC
Typ.
Max.
Unit
6
24
A
A
1.5
V
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
IS D
I SDM(•)
Source-drain Current
Source-drain Current
(pulsed)
V S D (∗)
Forward On Voltage
I SD = 6 A
Reverse Recovery
Time
Reverse Recovery
Charge
I SD = 6 A
di/dt = 100 A/µs
V DD = 100 V T j = 150 o C
t rr
Q rr
Min.
V GS = 0
170
ns
1
µC
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area for TO-220
Safe Operating Area for ISOWATT220
3/9
IRF620/FI
Thermal Impedance for TO-220
Thermal Impedance for ISOWATT220
Derating Curve for TO-220
Derating Curve for ISOWATT220
Output Characteristics
Transfer Characteristics
4/9
IRF620/FI
Transconductance
Static Drain-source On Resistance
Maximum Drain Current vs Temperature
Gate Charge vs Gate-source Voltage
Capacitance Variations
Normalized Breakdown Voltage vs Temperature
5/9
IRF620/FI
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
Unclamped Inductive Load Test Circuit
Unclamped Inductive Waveforms
Switching Time Test Circuit
Gate Charge Test Circuit
6/9
IRF620/FI
TO-220 MECHANICAL DATA
mm
DIM.
MIN.
inch
MAX.
MIN.
A
4.40
TYP.
4.60
0.173
0.181
C
1.23
1.32
0.048
0.051
D
2.40
2.72
0.094
0.107
D1
TYP.
1.27
MAX.
0.050
E
0.49
0.70
0.019
0.027
F
0.61
0.88
0.024
0.034
F1
1.14
1.70
0.044
0.067
F2
1.14
1.70
0.044
0.067
G
4.95
5.15
0.194
0.203
G1
2.4
2.7
0.094
0.106
H2
10.0
10.40
0.393
0.409
L2
16.4
0.645
L4
13.0
14.0
0.511
0.551
L5
2.65
2.95
0.104
0.116
L6
15.25
15.75
0.600
0.620
L7
6.2
6.6
0.244
0.260
3.5
3.93
0.137
0.154
3.75
3.85
0.147
0.151
D1
C
D
A
E
L9
DIA.
H2
G
G1
F1
L2
F2
F
Dia.
L5
L9
L7
L6
L4
P011C
7/9
IRF620/FI
ISOWATT220 MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
4.4
4.6
0.173
0.181
B
2.5
2.7
0.098
0.106
D
2.5
2.75
0.098
0.108
E
0.4
0.7
0.015
0.027
F
0.75
1
0.030
0.039
F1
1.15
1.7
0.045
0.067
F2
1.15
1.7
0.045
0.067
G
4.95
5.2
0.195
0.204
G1
2.4
2.7
0.094
0.106
H
10
10.4
0.393
0.409
L2
16
0.630
28.6
30.6
1.126
1.204
L4
9.8
10.6
0.385
0.417
L6
15.9
16.4
0.626
0.645
L7
9
9.3
0.354
0.366
Ø
3
3.2
0.118
0.126
B
D
A
E
L3
L3
L6
F
F1
L7
F2
H
G
G1
Ø
1 2 3
L2
8/9
L4
P011G
IRF620/FI
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
.
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