Infineon IPD60R170CFD7 600v coolmos⪠cfd7 power transistor Datasheet

IPD60R170CFD7
MOSFET
600VCoolMOSªCFD7PowerTransistor
DPAK
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.ThelatestCoolMOS™CFD7isthe
successortotheCoolMOS™CFD2seriesandisanoptimizedplatform
tailoredtotargetsoftswitchingapplicationssuchasphase-shiftfull-bridge
(ZVS)andLLC.Resultingfromreducedgatecharge(Qg),best-in-class
reverserecoverycharge(Qrr)andimprovedturnoffbehaviorCoolMOS™
CFD7offershighestefficiencyinresonanttopologies.AspartofInfineon’s
fastbodydiodeportfolio,thisnewproductseriesblendsalladvantagesof
afastswitchingtechnologytogetherwithsuperiorhardcommutation
robustness,withoutsacrificingeasyimplementationinthedesign-in
process.TheCoolMOS™CFD7technologymeetshighestefficiencyand
reliabilitystandardsandfurthermoresupportshighpowerdensity
solutions.Altogether,CoolMOS™CFD7makesresonantswitching
topologiesmoreefficient,morereliable,lighterandcooler.
tab
1
2
3
Drain
Pin 2, Tab
Gate
Pin 1
Features
Source
Pin 3
•Ultra-fastbodydiode
•Lowgatecharge
•Best-in-classreverserecoverycharge(Qrr)
•ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness
•LowestFOMRDS(on)*QgandRDS(on)*Eoss
•Best-in-classRDS(on)inSMDandTHDpackages
Benefits
•Excellenthardcommutationruggedness
•Highestreliabilityforresonanttopologies
•Highestefficiencywithoutstandingease-of-use/performancetradeoff
•Enablingincreasedpowerdensitysolutions
Potentialapplications
SuiteableforSoftSwitchingtopologies
Optimizedforphase-shiftfull-bridge(ZVS),LLCApplications–Server,
Telecom,EVCharging
ProductValidation:Qualifiedforindustrialapplicationsaccordingtothe
relevanttestsofJEDEC47/20/22
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
170
mΩ
Qg,typ
28
nC
ID,pulse
51
A
Eoss @ 400V
3.2
µJ
Body diode diF/dt
1300
A/µs
Type/OrderingCode
Package
IPD60R170CFD7
PG-TO 252-3
Final Data Sheet
Marking
60R170F7
1
RelatedLinks
see Appendix A
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Final Data Sheet
2
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
14
9
A
TC=25°C
TC=100°C
-
51
A
TC=25°C
-
-
60
mJ
ID=3.7A; VDD=50V; see table 10
EAR
-
-
0.30
mJ
ID=3.7A; VDD=50V; see table 10
Avalanche current, single pulse
IAS
-
-
3.7
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
120
V/ns
VDS=0...400V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
Ptot
-
-
76
W
TC=25°C
Storage temperature
Tstg
-55
-
150
°C
-
Operating junction temperature
Tj
-55
-
150
°C
-
Mounting torque
-
-
-
-
Ncm -
IS
-
-
14
A
TC=25°C
Diode pulse current
IS,pulse
-
-
51
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
70
V/ns
VDS=0...400V,ISD<=14A,Tj=25°C
see table 8
Maximum diode commutation speed
diF/dt
-
-
1300
A/µs
VDS=0...400V,ISD<=14A,Tj=25°C
see table 8
Insulation withstand voltage
VISO
-
-
n.a.
V
Vrms,TC=25°C,t=1min
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
Continuous diode forward current
2)
1)
Limited by Tj,max.
Pulse width tp limited by Tj,max
3)
Identical low side and high side switch with identical RG
2)
Final Data Sheet
3
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Unit
Note/TestCondition
Min.
Typ.
Max.
RthJC
-
-
1.65
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
62
°C/W device on PCB, minimal footprint
Thermal resistance, junction - ambient
RthJA
for SMD version
-
35
45
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm² (one
layer, 70µm thickness) copper area
°C/W
for drain connection and cooling.
PCB is vertical without air stream
cooling.
Soldering temperature, wave- & reflow
Tsold
soldering allowed
-
-
260
°C
Final Data Sheet
4
reflow MSL1
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
4
4.5
V
VDS=VGS,ID=0.3mA
-
7
1
37
µA
VDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=125°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.144
0.328
0.17
-
Ω
VGS=10V,ID=6.0A,Tj=25°C
VGS=10V,ID=6.0A,Tj=150°C
Gate resistance
RG
-
10.9
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
3.5
Zero gate voltage drain current1)
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
1199
-
pF
VGS=0V,VDS=400V,f=250kHz
Output capacitance
Coss
-
22
-
pF
VGS=0V,VDS=400V,f=250kHz
Effective output capacitance, energy
related2)
Co(er)
-
40
-
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related3)
Co(tr)
-
402
-
pF
ID=constant,VGS=0V,VDS=0...400V
Turn-on delay time
td(on)
-
31
-
ns
VDD=400V,VGS=10V,ID=7.0A,
RG=10.2Ω;seetable9
Rise time
tr
-
15
-
ns
VDD=400V,VGS=10V,ID=7.0A,
RG=10.2Ω;seetable9
Turn-off delay time
td(off)
-
68
-
ns
VDD=400V,VGS=10V,ID=7.0A,
RG=10.2Ω;seetable9
Fall time
tf
-
9
-
ns
VDD=400V,VGS=10V,ID=7.0A,
RG=10.2Ω;seetable9
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
7
-
nC
VDD=400V,ID=7.0A,VGS=0to10V
Gate to drain charge
Qgd
-
9
-
nC
VDD=400V,ID=7.0A,VGS=0to10V
Gate charge total
Qg
-
28
-
nC
VDD=400V,ID=7.0A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.7
-
V
VDD=400V,ID=7.0A,VGS=0to10V
1)
Maximum specification is defined by calculated six sigma upper confidence bound
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to400V
3)
Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to400V
2)
Final Data Sheet
5
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=6.0A,Tj=25°C
89
134
ns
VR=400V,IF=7A,diF/dt=100A/µs;
see table 8
-
0.34
0.68
µC
VR=400V,IF=7A,diF/dt=100A/µs;
see table 8
-
6.8
-
A
VR=400V,IF=7A,diF/dt=100A/µs;
see table 8
Min.
Typ.
Max.
VSD
-
1.0
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
6
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
80
1 µs
101
10 µs
60
100
ID[A]
Ptot[W]
100 µs
40
10-1
1 ms
10-2
10 ms
20
DC
10-3
0
0
25
50
75
100
125
10-4
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
1 µs
101
10 µs
100
100
0.5
ZthJC[K/W]
ID[A]
100 µs
10-1
1 ms
10-2
0.2
0.1
10-1
10 ms
0.05
0.02
0.01
DC
single pulse
-3
10
10-4
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
7
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
80
50
20 V
10 V
40
8V
60
20 V
10 V
8V
7V
40
ID[A]
ID[A]
30
7V
20
6V
20
10
5.5 V
6V
0
4.5 V 5 V
0
5
10
5V
5.5 V
15
0
20
4.5 V
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
0.460
2.5
20 V
0.420
5.5 V
6V
6.5 V
7 V 10 V
RDS(on)[normalized]
2.0
RDS(on)[Ω]
0.380
0.340
1.5
1.0
0.300
0.260
0
10
20
30
40
50
0.5
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=6.0A;VGS=10V
8
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
80
10
9
25 °C
8
120 V
60
7
40
VGS[V]
ID[A]
6
150 °C
400 V
5
4
3
20
2
1
0
0
2
4
6
8
10
0
12
0
5
10
VGS[V]
15
20
25
30
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=7.0Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
80
60
IF[A]
EAS[mJ]
101
100
125 °C
20
25 °C
10-1
40
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=3.7A;VDD=50V
9
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
105
690
104
660
Ciss
103
C[pF]
VBR(DSS)[V]
630
102
Coss
600
101
Crss
570
10
540
-50
-25
0
25
50
75
100
125
150
0
10-1
0
100
200
Tj[°C]
300
400
500
600
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=250kHz
Diagram15:Typ.Cossstoredenergy
7
6
Eoss[µJ]
5
4
3
2
1
0
0
100
200
300
400
500
600
VDS[V]
Eoss=f(VDS)
Final Data Sheet
10
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
Rg1
VDS
Rg 2
IF
Rg1 = Rg 2
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
11
ID
VDS
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
6PackageOutlines
Figure1OutlinePG-TO252-3,dimensionsinmm/inches
Final Data Sheet
12
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
7AppendixA
Table11RelatedLinks
• IFXCoolMOSCFD7Webpage:www.infineon.com
• IFXCoolMOSCFD7applicationnote:www.infineon.com
• IFXCoolMOSCFD7simulationmodel:www.infineon.com
• IFXDesigntools:www.infineon.com
Final Data Sheet
13
Rev.2.1,2018-01-18
600VCoolMOSªCFD7PowerTransistor
IPD60R170CFD7
RevisionHistory
IPD60R170CFD7
Revision:2018-01-18,Rev.2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2017-08-25
Release of final version
2018-01-18
Raised diode current for dv/dt and dif/dt (table 2) to value of continuous drain current;
Changed internal Rg (table 4); Renamed related links (table 11)
2.1
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Final Data Sheet
14
Rev.2.1,2018-01-18
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