IRFH8334PbF-1 VDS VGS max RDS(on) max 30 V ± 20 V 9.0 (@VGS = 10V) (@VGS = 4.5V) 13.5 Qg typ. 7.1 ID 25 (@Tc(Bottom) = 25°C) HEXFET® Power MOSFET mΩ nC i PQFN 5X6 mm A Applications • Control MOSFET for high frequency buck converters Features Industry-standard pinout PQFN 5 x 6mm Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRFH8334PBF-1 PQFN 5mm x 6mm ⇒ Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 4000 Orderable Part Number IRFH8334TRPBF-1 Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage 30 VGS ± 20 ID @ TA = 25°C Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V ID @ TA = 70°C Continuous Drain Current, VGS @ 10V ID @ TC(Bottom) = 25°C Continuous Drain Current, VGS @ 10V 12 44 ID @ TC(Bottom) = 100°C Continuous Drain Current, VGS @ 10V 28 IDM PD @TA = 25°C Power Dissipation c PD @TC(Bottom) = 25°C g Power Dissipation g TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range V 14 Continuous Drain Current, VGS @ 10V (Source Bonding Technology Limited) Pulsed Drain Current ID @ TC = 25°C Units hi hi 25i 100 3.2 30 g A 0.026 -55 to + 150 W W/°C °C Notes through are on page 9 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 29, 2014 IRFH8334PbF-1 Static @ TJ = 25°C (unless otherwise specified) Min. Typ. Drain-to-Source Breakdown Voltage Parameter 30 ––– ––– Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance ––– ––– 0.021 7.2 ––– 9.0 VGS(th) ΔVGS(th) Gate Threshold Voltage Gate Threshold Voltage Coefficient ––– 1.35 ––– 11.2 1.8 -6.6 13.5 2.35 ––– IDSS Drain-to-Source Leakage Current ––– ––– ––– ––– 1.0 150 IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage ––– ––– ––– ––– 100 -100 gfs Qg Forward Transconductance Total Gate Charge Total Gate Charge 44 ––– ––– ––– 15 7.1 ––– ––– ––– Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge ––– ––– 2.5 1.0 ––– ––– Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) ––– ––– ––– 2.3 1.3 3.3 ––– ––– ––– Output Charge ––– 5.7 ––– nC Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 1.2 8.3 14 ––– ––– ––– Ω Turn-Off Delay Time Fall Time Input Capacitance ––– ––– ––– 7.0 4.6 ––– ––– ––– Output Capacitance Reverse Transfer Capacitance ––– ––– BVDSS ΔΒVDSS/ΔTJ RDS(on) Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss 1180 260 110 Max. Units ––– ––– Conditions VGS = 0V, ID = 250μA V V/°C Reference to 25°C, ID = 1.0mA VGS = 10V, ID = 20A mΩ VGS = 4.5V, ID = 16A V VDS = VGS, ID = 25μA mV/°C e e VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125°C μA nA VGS = 20V VGS = -20V S nC VDS = 10V, ID = 20A VGS = 10V, VDS = 15V, ID = 20A VDS = 15V VGS = 4.5V nC ID = 20A VDS = 16V, VGS = 0V VDD = 30V, VGS = 4.5V ID = 20A ns RG=1.8Ω VGS = 0V pF VDS = 10V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c Max. 35 20 Typ. ––– ––– d Units mJ A Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current Min. ––– c (Body Diode) Diode Forward Voltage Reverse Recovery Time VSD trr Qrr Reverse Recovery Charge Forward Turn-On Time ton Typ. ––– Max. Units 25 ––– ––– 100 ––– ––– ––– 13 1.0 20 Conditions MOSFET symbol D A showing the integral reverse V ns p-n junction diode. TJ = 25°C, IS = 20A, VGS = 0V TJ = 25°C, IF = 20A, VDD = 15V di/dt = 380 A/μs ––– 19 29 nC Time is dominated by parasitic Inductance G S e e Thermal Resistance RθJC (Top) f Junction-to-Case f RθJA Junction-to-Ambient RθJC (Bottom) RθJA (<10s) 2 Parameter Junction-to-Case g Junction-to-Ambient g www.irf.com © 2014 International Rectifier Typ. ––– ––– ––– ––– Submit Datasheet Feedback Max. Units 4.1 37 °C/W 39 26 August 29, 2014 IRFH8334PbF-1 1000 1000 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 1 0.1 2.5V BOTTOM 10 2.5V 1 ≤60μs PULSE WIDTH ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 0.01 0.1 1 10 100 0.1 1000 Fig 1. Typical Output Characteristics 100 1000 RDS(on) , Drain-to-Source On Resistance (Normalized) 1.8 100 T J = 150°C 10 T J = 25°C VDS = 15V ≤60μs PULSE WIDTH 1.0 ID = 20A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 7 8 -60 -40 -20 0 Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 10000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 20A C oss = C ds + C gd Ciss 1000 Coss Crss 100 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10 Fig 2. Typical Output Characteristics 1000 ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) 10 12.0 VDS= 24V VDS= 15V 10.0 VDS= 6.0V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 2 VDS, Drain-to-Source Voltage (V) www.irf.com © 2014 International Rectifier 4 6 8 10 12 14 16 18 20 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage 3 VGS 10V 7.0V 5.0V 4.5V 3.5V 3.0V 2.8V 2.5V Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage Submit Datasheet Feedback August 29, 2014 IRFH8334PbF-1 1000 1000 100 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) T J = 150°C T J = 25°C 10 100 100μsec 1msec 10 Limited by Source Bonding Technology i 1 Tc = 25°C Tj = 150°C Single Pulse VGS = 0V 1.0 DC 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 1 VSD, Source-to-Drain Voltage (V) 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 2.8 45 i VGS(th) , Gate threshold Voltage (V) Limited By Source Bonding Technology 40 35 ID, Drain Current (A) 10msec 30 25 20 15 10 5 2.6 2.4 2.2 2.0 1.8 ID = 25μA 1.6 ID = 250μA ID = 1.0mA 1.4 ID = 1.0A 1.2 1.0 0.8 0 25 50 75 100 125 -75 -50 -25 150 0 25 50 75 100 125 150 T J , Temperature ( °C ) T C , Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case (Bottom) Temperature Fig 10. Threshold Voltage vs. Temperature Thermal Response ( Z thJC ) °C/W 10 D = 0.50 1 0.20 0.10 0.05 0.1 0.02 0.01 0.01 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom) 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 29, 2014 30 160 EAS , Single Pulse Avalanche Energy (mJ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFH8334PbF-1 ID = 20A 25 20 15 T J = 125°C 10 T J = 25°C 5 ID 3.7A 8.2A BOTTOM 20A 140 TOP 120 100 80 60 40 20 0 0 5 10 15 20 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) VGS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage Fig 13. Maximum Avalanche Energy vs. Drain Current V(BR)DSS tp 15V DRIVER L VDS D.U.T RG + V - DD IAS 20V A Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG RD Fig 14b. Unclamped Inductive Waveforms VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 Fig 15a. Switching Time Test Circuit 5 I AS 0.01Ω tp www.irf.com © 2014 International Rectifier 10% VGS td(on) tr td(off) tf Fig 15b. Switching Time Waveforms Submit Datasheet Feedback August 29, 2014 IRFH8334PbF-1 D.U.T Driver Gate Drive + - - * D.U.T. ISD Waveform Reverse Recovery Current + RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test P.W. Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - D= Period P.W. + V DD + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs Id Vds Vgs L DUT 0 1K S VCC Vgs(th) Qgs1 Qgs2 Fig 17. Gate Charge Test Circuit 6 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 18. Gate Charge Waveform Submit Datasheet Feedback August 29, 2014 IRFH8334PbF-1 PQFN 5x6 Outline "E" Package Details For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf For more information on package inspection techniques, please refer to application note AN-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf PQFN 5x6 Outline "E" Part Marking INTERNATIONAL RECTIFIER LOGO DATE CODE ASSEMBLY SITE CODE (Per SCOP 200-002) PIN 1 IDENTIFIER XXXX XYWWX XXXXX PART NUMBER (“4 or 5 digits”) MARKING CODE (Per Marking Spec) LOT CODE (Eng Mode - Min last 4 digits of EATI#) (Prod Mode - 4 digits of SPN code) Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 29, 2014 IRFH8334PbF-1 PQFN 5x6 Outline "E" Tape and Reel Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 29, 2014 IRFH8334PbF-1 † Qualification information Qualification level Moisture Sensitivity Level Industrial (per JE DE C JE S D47F PQFN 5mm x 6mm RoHS compliant †† guidelines ) MS L1 †† (per JE DE C J-S TD-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 0.18mH, RG = 50Ω, IAS = 20A. Pulse width ≤ 400μs; duty cycle ≤ 2%. Rθ is measured at TJ of approximately 90°C. When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Calculated continuous current based on maximum allowable junction temperature. Current is limited to 25A by source bonding technology. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 29, 2014