PROCESS CP108 Central Schottky Rectifier TM Semiconductor Corp. Schottky Barrier Rectifier Chip - 2.0 Amp PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 52 X 52 MILS Die Thickness 9 MILS Anode Bonding Pad Area 47 X 47 MILS Top Side Metalization Al - 20,000Å Back Side Metalization Au - 10,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 5,110 PRINCIPAL DEVICE TYPES 1N5817 1N5818 1N5819 CXSH-4 CZSH-4 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R8 (9 -September 2003) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CP108 Typical Electrical Characteristics R8 (9 -September 2003)