PROCESS CPD15 Central Ultra Fast Rectifier TM Semiconductor Corp. 500mA Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 14.5 x 14.5 MILS Top Side Metalization Au - 5,000Å Back Side Metalization Au - 2,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 18,080 PRINCIPAL DEVICE TYPES CBRHDU-02 Series BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (19-September 2003) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD15 Typical Electrical Characteristics R2 (19-September 2003)