Fairchild MMBT3904T Npn epitaxial silicon transistor Datasheet

MMBT3904T
NPN Epitaxial Silicon Transistor
Features
C
• General purpose amplifier transistor.
E
• Ultra-Small Surface Mount Package for all types.
B
• Suitable for general switching & amplification
Marking : A04
• Well suited for portable application
SOT-523F
• As complementary type, PNP MMBT3906T is recommended
Absolute Maximum Ratings
Symbol
Ta = 25°C unless otherwise noted
Parameter
Value
Unit
VCBO
Collector-Base Voltage
60
V
VCEO
Collector-Emitter Voltage
40
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current
200
mA
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature Range
-55 ~ 150
°C
* 1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics* T =25°C unless otherwise noted
a
Symbol
Parameter
Max
Unit
PC
Collector Power Dissipation, by RθJA
250
mW
RθJA
Thermal Resistance, Junction to Ambient
500
°C/W
* Minimum land pad.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min.
Max.
Unit
BVCBO
Collector-Base Breakdown Voltage
IC = 10μA, IE = 0
60
V
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1mA, IB = 0
40
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10μA, IC = 0
6
ICEX
Collector Cut-off Current
VCE = 60V, VEB(OFF) = 3V
hFE
DC Current Gain
VCE = 1V, IC = 0.1mA
VCE = 1V, IC = 1mA
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
V
50
40
70
100
60
30
nA
300
VCE (sat)
Collector-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.2
0.3
V
V
VBE (sat)
Base-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
0.65
0.85
0.95
V
V
fT
Current Gain Bandwidth Product
VCE = 20V, IC = 10mA, f = 100MHz
300
Cob
Output Capacitance
VCB = 5V, IE = 0, f = 1MHz
6
pF
Cib
Input Capacitance
VEB = 0.5V, IC = 0, f = 1MHz
15
pF
td
Delay Time
35
ns
tr
Rise Time
VCC = 3V, IC = 10mA
IB1 =- IB2 = 1mA
35
ns
ts
Storage Time
200
ns
tf
Fall Time
50
ns
MHz
* DC Item are tested by Pulse Test : Pulse Width≤300us, Duty Cycle≤2%
© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
www.fairchildsemi.com
1
MMBT3904T — NPN Epitaxial Silicon Transistor
February 2008
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage
1000
o
T J=125 C
Ic=10*Ib
Vce=1V
o
Collector-Emitter Voltage,[mV]
T J=75 C
o
Current Gain
T J=25 C
o
T J=-25 C
100
10
1
10
100
o
T J=125 C
o
T J=75 C
o
T J=25 C
100
o
T J=-25 C
10
1000
100
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Base- Emitter Saturation Voltage
Figure 4. Collector- Base Leakage Current
Base-Collector Leakage Current,[nA]
Ic=10*Ib
o
Base- Emitter Voltage,[mV]
o
T J=25 C
T J=-25 C
1000
o
T J=75 C
o
T J =125 C
100
10
100
1000
o
TJ=125 C
100
o
TJ=75 C
o
TJ=25 C
10
o
TJ=-25 C
1
10
20
Collector Current, [mA]
Figure 5. Collector- Base Capacitance
40
50
60
Figure 6. Power Derating
300
7
f=1mhz
250
7
Power Dissipation, [mW]
Base- Collector Juntion Capacitance, Cob[pF]
30
Base-Collector Revere Voltage, [V]
6
6
5
5
200
150
100
50
0
4
0
5
0
10
50
75
100
125
150
o
Ambient Temperature, T a[ C]
Base- Collector Reverse Voltage, V cb[V]
© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
25
www.fairchildsemi.com
2
MMBT3904T — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
MMBT3904T — NPN Epitaxial Silicon Transistor
Package Dimensions
SOT-523F
•
Case : SOT-523F
•
Case Material(Molded Plastic): KTMC1060SC
•
UL Flammability classification rating : “V0”
•
Moisture Sensitivity level per JESD22-A1113B : MSL 1
• Lead terminals solderable per MIL-STD7502026 /JESD22A121
• Lead Free Plating : Pure Tin(Matte)
Dimensions in Millimeters
© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
www.fairchildsemi.com
3
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Datasheet Identification
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Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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Obsolete
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31
© 2007 Fairchild Semiconductor Corporation
MMBT3904T Rev. 1.0.0
www.fairchildsemi.com
4
MMBT3904T NPN Epitaxial Silicon Transistor
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