Rectron BF493 Pnp silicon planar epitaxial high voltage video transistors high voltage video amplifier Datasheet

BF491
THRU
BF493
PNP SILICON PLANAR EPITAXIAL
HIGH VOLTAGE VIDEO TRANSISTORS
High Voltage Video Amplifier
Darlington Transistor
* Power Dissipation: PD=625mW
TO-92
.210(5.33)
.170(4.32)
.205(5.20)
.175(4.45)
3 2 1
.082(2.082)
.50(12.7MIN.)
.078(1.982)
.022(0.55)
.016(0.41)
.020(0.50)
.014(0.35)
.055(1.40)
.045(1.14)
.058(1.40)
.045(1.14)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Ratings at 25 C ambient temperature unless otherwise specified.
COLLECTOR
1
.165(4.19)
.125(3.18)
.062(1.53)
.045(1.14)
3 2 1
BASE
2
3
EMITTER
Dimensions in inches and (millimeters)
Absolute Maximum Ratings T A=25 OC unless otherwise noted
SYMBOL
BF491
BF492
BF493
UNITS
Collector-Emitter Voltage
VCEO
200
250
300
Volts
Collector Base Voltage
VCBO
200
250
300
Volts
Emitter Base Voltage
VEBO
6
8
8
Volts
DESCRIPTION
Collector Current Continuous
IC
mAmps
mW
1.2
0
mW/ C
PD
1500
12
mW/ 0C
Tj,TSTG
-55 to + 150
PD
Total Device Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
500
625
Total Device Dissipation @ Ta=25ºC
Derate Above 25ºC
mW
0
C
ELECTRICAL CHARACTERISTICS T A=25 OC unless otherwise noted
Test Condition
SYMBOL
BF491
BF492
BF493
UNITS
IC=0.1mA,IE=0
BVCBO
>200
>250
>300
Volts
IC=1mA,IB=0
BVCEO*
>200
>250
>300
Volts
Emitter-Base Breakdown Voltage
IE=100uA,IC=0
BVEBO
>6.0
>8.0
>8.0
Volts
Collector Cutoff Current
VCB=160V,IE=0
VCB=200V,IE=0
ICBO
<0.1
<0.1
<0.1
Emitter Cutoff Current
VEB=4.0V,IC=0
VEB=6.0V,IC=0
IEBO
<0.1
<0.1
<0.1
IC=1mA,VCE=10V
IC=10mA,VCE=10V
hFE
>25
>40
>25
>40
>25
>40
Collector-Emitter Saturation Voltage
IC=20mA,IB=2mA
VCE(sat)
<2
<2
<2
Base-Emitter Saturation Voltage
IC=20mA,IB=2mA
VBE(sat)
<2
<2
<2
DESCRIPTION
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
DC Current Gain
uA
uA
Volts
Volts
VD 2009-10
REV: O
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
BF491
BF492
BF493
UNITS
Current Gain-Bandwidth Product
fT
I C=10mA, VCE=20V, f=20MHz
>50
>50
>50
MHz
Feedback Capacitance
Cre
VCB=100V, f=1MHz, IE=0
<2
<2
<2
pF
*Pulse Condition: = Width < 300us, Duty Cycle < 2.0%.
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
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