Diodes BC847A Npn small signal surface mount transistor Datasheet

BC847AT, BT, CT
NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
NEW PRODUCT
Features
·
·
·
Epitaxial Die Construction
Complementary PNP Type Available
(BC857AT,BT,CT)
Ultra-Small Surface Mount Package
SOT-523
C
TOP VIEW
Mechanical Data
·
·
·
·
Case: SOT-523, Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Terminal Connections: See Diagram
Weight: 0.002 grams (approx.)
B
A
G
H
Marking
1E
BC847B
1F
BC847C
1M
Maximum Ratings
M
N
J
Type
C
E
K
BC847A
B
D
Dim
Min
Max
Typ
A
0.15
0.30
0.22
B
0.75
0.85
0.80
C
1.45
1.75
1.60
D
¾
¾
0.50
G
0.90
1.10
1.00
H
1.50
1.70
1.60
J
0.00
0.10
0.05
K
0.60
0.80
0.75
L
0.10
0.30
0.22
M
0.10
0.20
0.12
N
0.45 0.65 0.50
All Dimensions in mm
L
@ TA = 25°C unless otherwise specified
Symbol
Value
Unit
Collector-Base Voltage
Characteristic
VCBO
50
V
Collector-Emitter Voltage
VCEO
45
V
Emitter-Base Voltage
VEBO
6.0
V
Collector Current
IC
100
mA
Power Dissipation (Note 1)
Pd
150
mW
RqJA
833
°C/W
Tj, TSTG
-55 to +150
°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Ordering Information (Note 2)
Notes:
Device
Packaging
Shipping
BC847AT-7
SOT-523
3000/Tape & Reel
BC847BT-7
SOT-523
3000/Tape & Reel
BC847CT-7
SOT-523
3000/Tape & Reel
1. Device mounted on FR-4 PC board with recommended pad layout.
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
DS30274 Rev. A-2
1 of 3
BC847AT, BT, CT
NEW PRODUCT
Electrical Characteristics
@ TA = 25°C unless otherwise specified
Characteristic
DC Current Gain
Symbol
Min
Typ
Max
Unit
—
—
—
110
200
420
—
150
270
—
290
520
—
—
—
220
450
800
—
Test Condition
(Note 3)
Current Gain A
B
C
Current Gain A
B
C
hFE
VCE = 5.0V, IC = 2.0mA
Collector-Emitter Saturation Voltage
(Note 3)
VCE(SAT)
—
—
250
600
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Saturation Voltage
(Note 3)
VBE(SAT)
—
700
900
—
mV
IC = 10mA, IB = 0.5mA
IC = 100mA, IB = 5.0mA
Base-Emitter Voltage
(Note 3)
VBE
580
—
660
—
700
770
mV
VCE = 5.0V, IC = 2.0mA
VCE =5.0V, IC = 10mA
Collector-Emitter Cutoff Current
(Note 3)
ICBO
ICBO
—
—
15
5.0
nA
µA
VCB = 30V
VCB = 30V, TA = 150°C
fT
100
—
—
MHz
COBO
—
—
4.5
pF
NF
—
—
10
4.0
dB
Gain Bandwidth Product
Output Capacitance
Noise Figure
Notes:
BC847BT
BC847CT
VCE = 5.0V, IC = 10mA,
f = 100MHz
VCB = 10V, f = 1.0MHz
VCE = 5V, RS = 2.0kW,
f = 1.0kHz, BW = 200Hz
3. Short duration test pulse used to minimize self-heating effect.
DS30274 Rev. A-2
2 of 3
BC847AT, BT, CT
1000
250
VCE = 5V
200
hFE, DC CURRENT GAIN
Pd, POWER DISSIPATION (mW)
100 C
150
100
TA = 25 C
100
-50 C
10
50
1
0
0
100
0.01
200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Derating Curve
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
IC / IB = 20
0.4
0.3
0.2
TA = 100 C
0.1
25 C
-50 C
1.0
10
10
100
TA = 25 C
VCE = 10V
5V
2V
100
0.1
100
1.0
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4, Gain Bandwidth Product vs Collector Current
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector Saturation Voltage vs Collector Current
Notes:
1.0
10
0
0.1
0.1
IC, COLLECTOR CURRENT (mA)
Fig. 2, DC Current Gain vs Collector Current
0.5
VCE, COLLECTOR SATURATION VOLTAGE (V)
NEW PRODUCT
(see Note 1)
1. Device mounted on FR-4 PC board with recommended pad layout.
DS30274 Rev. A-2
3 of 3
BC847AT, BT, CT
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