CENTRAL CS18B

Central
CS18B
CS18D
CS18M
CS18N
TM
Semiconductor Corp.
SILICON CONTROLLED RECTIFIER
1.0 AMP, 200 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS18B series
types are hermetically sealed silicon controlled
rectifiers manufactured in a TO-18 case, designed
for control systems and sensing circuit
applications.
MARKING CODE: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Off-State Voltage
RMS On-State Current (TC=90°C)
Nonrept. On-State Current
VDRM, VRRM
IT(RMS)
CS18B CS18D CS18M CS18N
200
400
600
UNITS
800
V
1.0
A
ITSM
I 2t
10
1.0
A
2.0
W
Gate Dissipation
IGM
PGM
PG (AV)
0.1
W
Storage Temperature
Tstg
-40 to +150
°C
Fusing Current (t=10ms)
Peak Gate Current (t=10µs)
Peak Gate Dissipation (t=10µs)
A
A2s
0.24
Junction Temperature
TJ
-40 to +125
°C
Thermal Resistance
ΘJC
32
°C/W
Thermal Resistance
ΘJA
200
°C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
SYMBOL
TYP
MAX
UNITS
IDRM, IRRM
Rated VDRM, VRRM, RGK=1.0KΩ
1.0
µA
IDRM, IRRM
Rated VDRM, VRRM, RGK=1.0KΩ, TC=125°C
0.1
mA
VTM
IT=2.0A
1.6
2.15
V
IGT
VD=12V, RL=10Ω
20
200
µA
VGT
VD=12V, RL=10Ω
0.65
0.8
V
IH
RGK=1.0KΩ
0.5
5.0
mA
dv/dt
VD=0.67V x VDRM, RGK=1.0KΩ, TC=125°C
25
V/µs
R1 (18-August 2004)
Central
TM
CS18B
CS18D
CS18M
CS18N
Semiconductor Corp.
SILICON CONTROLLED RECTIFIER
1.0 AMP, 200 THRU 800 VOLTS
TO-18 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) CATHODE
2) GATE
3) ANODE
MARKING CODE:
FULL PART NUMBER
DIMENSIONS
INCHES
MILLIMETERS
SYMBOL MIN
MAX
MIN
MAX
A (DIA) 0.209 0.230 5.31
5.84
B (DIA) 0.178 0.195 4.52
4.95
C
0.030
0.76
D
0.170 0.210 4.32
5.33
E
0.500
12.70
F (DIA) 0.016 0.019 0.41
0.48
0.100
2.54
G (DIA)
0.050
1.27
H
I
0.036 0.046 0.91
1.17
J
0.028 0.048 0.71
1.22
TO-18 (REV: R1)
R1 (18-August 2004)