IXYS DSEC29-02A Hiperfred epitaxial diode with common cathode and soft recovery Datasheet

DSEC 29-02A
DSEC 29-02AS
HiPerFREDTM Epitaxial Diode
IFAV = 2x15 A
VRRM = 200 V
trr
= 25 ns
with common cathode and soft recovery
VRSM
VRRM
V
V
200
200
200
200
TO-220 AC
Type
A
C
A
DSEC 29-02A
DSEC 29-02AS
C (TAB)
TO-263
C (TAB)
A
A
A = Anode, C = Cathode, TAB = Cathode
Symbol
Conditions
Maximum Ratings
IFRMS
IFAVM
TC = 150°C; rectangular, d = 0.5
IFSM
35
15
A
A
TVJ = 45°C; tp = 10 ms (50 Hz), sine
140
A
EAS
TVJ = 25°C; non-repetitive
IAS = 2.5 A; L = 180 µH
0.8
mJ
IAR
VA = 1.5·VR typ.; f = 10 kHz; repetitive
0.3
A
-55...+175
175
-55...+150
°C
°C
°C
95
W
TVJ
TVJM
Tstg
Ptot
TC = 25°C
Md
mounting torque
Weight
typical
Symbol
Conditions
IR
①
VF ②
0.45...0.55
4...5
2/4
Nm
lb.in.
g
Characteristic Values
typ.
max.
TVJ = 25°C; VR = VRRM
TVJ = 150°C; VR = VRRM
100
0.5
µA
mA
IF = 15 A;
0.86
1.06
V
V
1.6
0.5
K/W
K/W
ns
TVJ = 150°C
TVJ = 25°C
RthJC
RthCH
trr
IF = 1 A; -di/dt = 100 A/µs;
VR = 30 V; TVJ = 25°C
25
IRM
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs
TVJ = 100°C
3.5
4.4
A
Features
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low
EMI/RFI
• Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
432
Data according to IEC 60747 and per diode unless otherwise specified.
1-2
DSEC 29-02A
DSEC 29-02AS
50
700
nC
600
A
30
TVJ = 100°C
Qr
TVJ = 150°C
30
IRM
500
400
TVJ = 100°C
TVJ = 25°C
300
20
VR = 100 V
25
40
IF
TVJ = 100°C
A
VR = 100 V
IF = 30 A
20
IF = 15 A
IF = 7.5 A
15
IF = 30 A
IF = 15 A
IF = 7.5 A
10
200
10
5
100
0
0.0
0.4
0.8
1.2 V
VF
0
100
1.6
Fig. 1 Forward current IF versus VF
0
A/µs 1000
-diF/dt
Fig. 2 Typ. reverse recovery charge Qr
80
1.4
trr
200
400
600 A/µs
800 1000
-diF/dt
Fig. 3 Typ. peak reverse current IRM
40
TVJ = 100°C
ns
1.2
0
tfr
VFR
V
VR = 100 V
70
IF = 15 A
60
0.30
30
VFR
IF = 30 A
Kf
0.40
µs
0.35
tfr
0.25
IF = 7.5 A
1.0
0.20
20
TVJ = 100°C
50
0.15
IF = 15 A
IRM
0.8
0.10
10
40
0.05
Qr
0.6
0
40
30
80
120 °C 160
0
0
TVJ
200
400
600 A/µs
800
1000
0
200
400
-diF/dt
Fig. 4 Typ. dynamic parameters Qr, IRM
Fig. 5 Typ. recovery time trr
versus -diF/dt
0.00
600 A/µs
800 1000
diF/dt
Fig. 6 Typ. peak forward voltage
VFR and tfr
10
K/W
1
ZthJC
0.1
Constants for ZthJC calculation:
i
0.01
0.001
0.00001
DSEC 29-02A
0.0001
0.001
0.01
s
0.1
1
2
4
Rthi (K/W)
ti (s)
0.851
0.328
0.421
0.0052
0.0003
0.0409
1
t
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
432
Fig. 7 Transient thermal resistance junction to case
2-2
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