DATA SHEET CT-32 DIAC DO-35 CASE DESCRIPTION The Central Semiconductor CT-32 Diac functions as a trigger diode with a fixed voltage reference and low breakover current. This device is manufactured in a hermetically sealed glass package to ensure high reliability. MAXIMUM RATINGS (TA=25°C) Repetitive Peak On-state Current SYMBOL ITRM tp=20µs, f=120Hz Operating and Storage Junction Temperature TJ,Tstg UNITS A 2.0 -40 to +125 °C ELECTRICAL CHARACTERISTICS (TA=25°C) SYMBOL VBO* | VBO1 – VBO2 | ∆V VO IBO IR IP tr TEST CONDITIONS C=22nF** C=22nF** VBO & VF @ 10mA See Figure 2 C=22nF** VR = 18V See Figure 2 See Figure 3 MIN 28 MAX 36 3.0 5.0 5.0 50 10 0.3 2.0 UNITS V V V V µA µA A µs * Both directions. **Capacitor connected in parallel with device. (SEE REVERSE SIDE) R0 CT-32 DIAC +IF 10mA IBO -V IB +V 0.5VBO ∆V VF VBO Figure 2. Test circuit. -IF Figure 1. Voltage – Current characteristic curve. 10KΩ 200KΩ 90% D.U.T. IP Vo 110V 60Hz 0.1µF Ip CQ202-4D 20Ω 10% tr Figure 2. Test circuit. Figure 3. Rise time measurement. DO-35 PACKAGE - MECHANICAL OUTLINE A SYMBOL A B C D D B C D R1 DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.018 0.022 0.46 0.56 0.120 0.200 3.05 5.08 0.060 0.090 1.52 2.29 1.000 25.40 DO-35 (REV: R1)