N EW Central CZTA27 TM Semiconductor Corp. NPN HIGH VOLTAGE DARLINGTON TRANSISTOR DESCRIPTION The CENTRAL SEMICONDUCTOR CZTA27 type is a NPN Silicon Darlington Transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high gain and high voltage. SOT-223 CASE MAXIMUM RATINGS (TA=25°C) Collector-Emitter Voltage UNITS 60 V Emitter-Base Voltage VCES VEBO 10 V Collector Current IC 500 mA Power Dissipation PD 2.0 W Operating and Storage Junction Temperature TJ,Tstg -65 to +150 °C Thermal Resistance QJA 62.5 °C/W ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS ICBO MIN MAX UNITS VCB=50V 100 nA ICES VCE=50V 500 nA IEBO VEB=10V 100 nA BVCBO IC=100mA 60 V BVCES VCE(SAT) IC=100mA 60 V IC=100mA, IB=0.1mA 1.5 V VBE(ON) VCE=5.0V, IC=100mA 2.0 V hFE VCE=5.0V, IC=10mA 10,000 hFE fT VCE=5.0V, IC=100mA 10,000 VCE=5.0V, IC=10mA, f=100MHz 408 125 MHz All Dimensions in Inches (mm) 7239,(: LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR R2 409