Comchip CEFA203-G Smd efficient fast recovery rectifier Datasheet

SMD Efficient Fast Recovery Rectifiers
CEFA201-G Thru. CEFA203-G
Reverse Voltage: 50 to 200 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
DO-214AC (SMA)
-Ideal for surface mount applications.
-Easy pick and place.
0.180(4.57)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.110(2.79)
0.086(2.18)
0.067(1.70)
0.051(1.29)
-Super fast recovery time for high efficient.
-Built-in strain relief.
-Low forward voltage drop.
0.209(5.31)
0.185(4.70)
Mechanical data
-Case: JEDEC DO-214AC, molded plastic.
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.059(1.50)
0.035(0.89)
0.008(0.20)
0.004(0.10)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Symbol
CEFA201-G
CEFA202-G
CEFA203-G
Units
Max. repetitive peak reverse voltage
VRRM
50
100
200
V
Max. DC blocking voltage
VDC
50
100
200
V
Max. RMS voltage
VRMS
35
70
140
V
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
50
A
Max. average forward current
IO
2.0
A
Max. instantaneous forward voltage at
2.0A
VF
0.92
V
Reverse recovery time
Trr
25
nS
IR
5.0
100
μA
RθJL
55
TJ
150
O
C
TSTG
-55 to +150
O
C
Max. DC reverse current at TA=25
rated DC blocking voltage TA=100
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
O
C
C
O
O
C/W
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper2 pad area.
REV:A
Page 1
QW-BE002
Comchip Technology CO., LTD.
SMD Efficient Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CEFA201-G thru CEFA203-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
100
10
1
F o r w a rd C u rren t(A)
Rever s e C urr e n t (μA )
10
O
TJ=125 C
1
TJ=75 OC
TJ=25 OC
0.1
0.01
0.1
O
TJ=25 C
Pulse width 300μS
4% duty cycle
0.01
0.001
0
20
40
60
80
100
120
0
140
0.4
0.8
1.6
1.2
2.0
Percent of Rated Peak Reverse Voltage (%)
Forward Voltage (V)
Fig.3 Current Derating Curve
Fig.4 Non-repetitive Forward Surge Current
2.8
50
Peak F or ward Surge C ur re nt A
( )
O
A v e ra ge d F o r ward C u rr e n t(A )
2.4
2.0
1.6
1.2
0.8
Single phase
Half wave 60Hz
0.4
TJ=25 C
8.3ms single half sine
wave, JEDEC method
40
30
20
10
0
0
0
25
50
75
100
125
Ambient Temperature (
150
O
175
1
10
100
Number of Cycles at 60Hz
C)
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
50Ω
NONINDUCTIVE
trr
10Ω
NONINDUCTIVE
+0.5A
(+)
25Vdc
(approx.)
(-)
(-)
D.U.T.
1Ω
NONINDUCTIVE
PULSE
GENERATOR
(NOTE 2)
0
-0.25A
(+)
OSCILLLISCOPE
(NOTE 1)
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
1cm
Set time base for
50 / 10nS / cm
REV:A
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QW-BE002
Comchip Technology CO., LTD.
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