Chenmko CHT589PT Pnp silicon transistor Datasheet

CHENMKO ENTERPRISE CO.,LTD
CHT589PT
SURFACE MOUNT
PNP Silicon Transistor
VOLTAGE 30 Volts
CURRENT 1 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SOT-23
* High saturation current capability.
.019 (0.50)
.041 (1.05)
.033 (0.85)
* Small surface mounting type. (SOT-23)
* High current (Max.=200mA).
* Suitable for high packing density.
.066 (1.70)
.110 (2.80)
.082 (2.10)
.119 (3.04)
(1)
* Voltage controlled small signal switch.
.018 (0.30)
FEATURE
(3)
(2)
CONSTRUCTION
589
C
CIRCUIT
.103 (2.64)
.086 (2.20)
.045 (1.15)
.033 (0.85)
(3)
.002 (0.05)
MARKINTG
.028 (0.70)
.020 (0.50)
.007 (0.177)
.055 (1.40)
.047 (1.20)
* PNP Silicon Transistor
(1) B
E (2)
SOT-23
Dimensions in inches and (millimeters)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
−
V
−
V
-1
A
−
-2
−
-200
A
mA
VCBO
collector-base voltage
open emitter
-50
VCEO
collector-emitter voltage
open base
-30
VEBO
emitter-base voltage
open collector
IC
collector current (DC)
-5
−
ICM
peak collector current
IBM
peak base current
Ptot
total power dissipation
−
500
Tstg
storage temperature
−55
+150
Tj
junction temperature
°C
operating ambient temperature
−
− 55
+150
Tamb
+150
°C
Tamb ≤ 25 °C; note 1
V
mW
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHT589PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
thermal resistance from junction to ambient
VALUE
UNIT
357
K/W
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB = -30 V
−
-100
nA
IEBO
emitter cut-off current
IC = 0; VEB = - 4 V
−
-100
nA
hFE
DC current gain
IC = -1 mA; VCE = -2V
IC = -500mA; VCE = -2V
100
−
300
IC = -1A; VCE = - 2V
I C = -2A; VCE = -2V
VCEsat
collector-emitter saturation
voltage
100
80
40
−
−
Ic = -0.5A; IB=-50mA
−
-0.25
V
Ic = -1A; IB=-100mA
−
-0.35
V
IC = -2A; IB = -200 m A
−
-0.65
V
VBEsat
base-emitter saturation voltage
IC = -1A; IB = -100 mA
−
-1.2
V
VBEon
base-emitter turn-on voltage
IC = -1A; VCE = -2V
−
-1.1
V
Cobo
output capacitance
VCB = -10V; f = 1 MHz
−
15
pF
fT
transition frequency
IC = -100 mA; VCE = - 5 V;
f = 100 MHz
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
100
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