ON BSP52T3G Npn small-signal darlington transistor Datasheet

BSP52T1G, BSP52T3G
NPN Small-Signal
Darlington Transistor
This NPN small signal Darlington transistor is designed for use in
switching applications, such as print hammer, relay, solenoid and lamp
drivers. The device is housed in the SOT-223 package, which is
designed for medium power surface mount applications.
Features
• The SOT-223 Package can be soldered using wave or reflow. The
•
•
•
formed leads absorb thermal stress during soldering, eliminating the
possibility of damage to the die
Available in 12 mm Tape and Reel
Use BSP52T1 to Order the 7 Inch/1000 Unit Reel
PNP Complement is BSP62T1
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MEDIUM POWER
NPN SILICON
SURFACE MOUNT
DARLINGTON TRANSISTOR
COLLECTOR 2,4
BASE
1
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Max
Unit
Collector-Emitter Voltage
VCES
80
Vdc
Collector-Base Voltage
VCBO
90
Vdc
Emitter-Base Voltage
VEBO
5.0
Vdc
Collector Current
IC
1.0
Adc
Total Power Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD
0.8
6.4
W
mW/°C
Total Power Dissipation (Note 2)
@ TA = 25°C
Derate above 25°C
PD
1.25
10
W
mW/°C
TJ, Tstg
−65 to 150
°C
Operating and Storage
Temperature Range
THERMAL CHARACTERISTICS
Symbol
Value
Unit
Thermal Resistance (Note 1)
Junction-to-Ambient
Characteristic
RqJA
156
°C/W
Thermal Resistance (Note 2)
Junction-to-Ambient
RqJA
100
°C/W
TL
260
10
°C
Sec
Maximum Temperature for Soldering
Purposes
Time in Solder Bath
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum
recommended footprint.
2. Device mounted on a FR-4 glass epoxy printed circuit board using 1 cm2 pad.
© Semiconductor Components Industries, LLC, 2010
September, 2010 − Rev. 6
1
EMITTER 3
4
1
2
MARKING DIAGRAM
AYW
AS3G
G
3
SOT−223
CASE 318E
STYLE 1
A
= Assembly Location
Y
= Year
W
= Work Week
AS3
= Specific Device Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
BSP52T1G
SOT−223
(Pb−Free)
1000/Tape & Reel
BSP52T3G
SOT−223
(Pb−Free)
4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
BSP52T1/D
BSP52T1G, BSP52T3G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristics
Symbol
Min
Max
90
−
5.0
−
−
10
−
10
1000
2000
−
−
−
1.3
−
1.9
Unit
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter-Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
Collector-Emitter Cutoff Current
(VCE = 80 Vdc, VBE = 0)
ICES
Emitter-Base Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
Vdc
Vdc
mAdc
mAdc
ON CHARACTERISTICS (Note 3)
DC Current Gain
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
hFE
Collector-Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VCE(sat)
Base-Emitter Saturation Voltage
(IC = 500 mAdc, IB = 0.5 mAdc)
VBE(sat)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%
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2
−
Vdc
Vdc
BSP52T1G, BSP52T3G
PACKAGE DIMENSIONS
SOT−223 (TO−261)
CASE 318E−04
ISSUE N
D
b1
4
HE
E
1
2
3
b
e1
e
0.08 (0003)
A1
C
q
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M,
1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
INCHES
DIM
MIN
NOM
MAX
MIN
NOM
A
1.50
1.63
1.75
0.060
0.064
A1
0.02
0.06
0.10
0.001
0.002
b
0.60
0.75
0.89
0.024
0.030
b1
2.90
3.06
3.20
0.115
0.121
c
0.24
0.29
0.35
0.009
0.012
D
6.30
6.50
6.70
0.249
0.256
E
3.30
3.50
3.70
0.130
0.138
e
2.20
2.30
2.40
0.087
0.091
e1
0.85
0.94
1.05
0.033
0.037
L
0.20
−−−
−−−
0.008
−−−
L1
1.50
1.75
2.00
0.060
0.069
HE
6.70
7.00
7.30
0.264
0.276
0°
10°
0°
−
−
q
STYLE 1:
PIN 1.
2.
3.
4.
L1
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
BASE
COLLECTOR
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
SCALE 6:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent
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BSP52T1/D
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