Renesas BCR16RM-12LB Triac medium power use Datasheet

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BCR16RM-12LB
Triac
Medium Power Use
REJ03G1714-0100
Rev.1.00
Jul 08, 2008
Features
•
•
•
•
• The product guaranteed maximum junction
temperature of 150°C
• Insulated Type
• Planar Passivation Type
IT (RMS) : 16 A
VDRM : 600 V
IFGTI, IRGTI, IRGTIII : 30 mA
Viso : 2000 V
Outline
RENESAS Package code: PRSS0003ZA-A
(Package name: TO-3PFM)
2
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
3
1
1
2
3
Applications
Contactless AC switch, electric heater control, light dimmer, on/off and speed control of small induction motor, on/off
control of copier lamp
Maximum Ratings
Parameter
Repetitive peak off-state voltage Note1
Non-repetitive peak off-state voltage Note1
REJ03G1714-0100 Rev.1.00 Jul 08, 2008
Page 1 of 7
Symbol
Voltage class
12
Unit
VDRM
VDSM
600
720
V
V
BCR16RM-12LB
Parameter
RMS on-state current
Symbol
IT (RMS)
Ratings
16
Unit
A
Surge on-state current
ITSM
160
A
I2t
128
A2s
PGM
PG (AV)
VGM
IGM
Tj
Tstg
—
Viso
5
0.5
10
2
– 40 to +150
– 40 to +150
5.2
2000
W
W
V
A
°C
°C
g
V
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Isolation voltage
Conditions
Commercial frequency, sine full wave
360° conduction, Tc = 117°C
50 Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 50 Hz, surge on-state current
Typical value
Ta = 25°C, AC 1 minute,
T1·T2·G terminal to case
Notes: 1. Gate open.
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Symbol
IDRM
VTM
Min.
—
—
Typ.
—
—
Max.
2.0
1.5
Unit
mA
V
Test conditions
Tj = 150°C, VDRM applied
Tc = 25°C, ITM = 25 A,
Instantaneous measurement
Gate trigger voltage Note2
Ι
ΙΙ
ΙΙΙ
VFGTΙ
VRGTΙ
VRGTΙΙΙ
—
—
—
—
—
—
1.5
1.5
1.5
V
V
V
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
Gate trigger current Note2
Ι
ΙΙ
ΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
—
—
—
—
—
—
30
30
30
mA
mA
mA
Tj = 25°C, VD = 6 V, RL = 6 Ω,
RG = 330 Ω
VGD
Rth (j-c)
0.2/0.1
—
—
—
—
1.8
V
°C/W
Tj = 125°C/150°C, VD = 1/2 VDRM
Junction to caseNote3
(dv/dt)c
10/1
—
—
V/µs
Tj = 125°C/150°C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutating voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5°C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125°C/150°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
REJ03G1714-0100 Rev.1.00 Jul 08, 2008
Page 2 of 7
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
(di/dt)c
Time
Main Voltage
(dv/dt)c
Time
VD
BCR16RM-12LB
Performance Curves
103
7
5
3
2
Tj = 150°C
101
7
5
3
2
Tj = 25°C
1.0
1.5
2.0
2.5
3.0
3.5
120
100
80
60
40
20
2 3 4 5 7 101
2 3 4 5 7 102
Gate Trigger Current vs.
Junction Temperature
PGM = 5W
IGM = 2A
100
7
5
3
2
Gate Trigger Current (Tj = 25°C)
PG(AV) = 0.5W
× 100 (%)
Gate Characteristics (I, II and III)
103
7
5
4
3
2
Typical Example
IRGT III
102
7
5
4
3
2
IFGT I, IRGT I
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage vs.
Junction Temperature
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
REJ03G1714-0100 Rev.1.00 Jul 08, 2008
Page 3 of 7
Transient Thermal Impedance (°C/W)
× 100 (%)
140
0
100
4.0
10–1
7 IFGT I, IRGT I, IRGT III
VGD = 0.1V
5
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Gate Trigger Voltage (Tj = 25°C)
160
Conduction Time (Cycles at 50 Hz)
101
7
5
3 VGT = 1.5V
2
103
7
5
4
3
2
180
On-State Voltage (V)
3
2 VGM = 10V
Gate Voltage (V)
Surge On-State Current (A)
200
102
7
5
3
2
100
0.5
Gate Trigger Voltage (Tj = t°C)
Rated Surge On-State Current
Gate Trigger Current (Tj = t°C)
On-State Current (A)
Maximum On-State Characteristics
102
2.0
103
104
100
101
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
10–1
102
Conduction Time (Cycles at 50 Hz)
BCR16RM-12LB
Allowable Case Temperature vs.
RMS On-State Current
40
160
35
140
30
Case Temperature (°C)
On-State Power Dissipation (W)
Maximum On-State Power Dissipation
360° Conduction
Resistive,
inductive loads
25
20
15
10
0
2
4
6
40
360° Conduction
Resistive,
inductive loads
0
2
4
6
8 10 12 14 16 18 20
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
Allowable Ambient Temperature vs.
RMS On-State Current
160
Ambient Temperature (°C)
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60 t2.3
80
60 Curves apply
regardless of
40 conduction angle
Resistive,
20 inductive loads
Natural convection
0
0 2 4 6 8 10 12 14 16 18 20
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
140
120
100
80
60
40
20
0
0
1
2
3
4
RMS On-State Current (A)
Repetitive Peak Off-State Current vs.
Junction Temperature
Holding Current vs.
Junction Temperature
5
3 Typical Example
2
105
7
5
3
2
104
7
5
3
2
103
7
5
3
2
102
–60 –40 –20 0 20 40 60 80 100 120 140160
Junction Temperature (°C)
REJ03G1714-0100 Rev.1.00 Jul 08, 2008
Page 4 of 7
× 100 (%)
RMS On-State Current (A)
Holding Current (Tj = 25°C)
100
60
RMS On-State Current (A)
Holding Current (Tj = t°C)
Ambient Temperature (°C)
× 100 (%)
Repetitive Peak Off-State Current (Tj = t°C)
Repetitive Peak Off-State Current (Tj = 25°C)
120
Curves apply regardless
80 of conduction angle
0
8 10 12 14 16 18 20
160
140
100
20
5
0
120
103
7
5
4
3
2
5
Typical Example
102
7
5
4
3
2
101
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
BCR16RM-12LB
Breakover Voltage vs.
Junction Temperature
101
7
5
3
2
T2+, G+
Typical Example
T2–, G–
0
40
80
120
160
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 125°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj = 150°C)
Typical Example
Tj = 125°C
140
120
III Quadrant
100
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Breakover Voltage (dv/dt = 1V/µs)
160
× 100 (%)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/µs)
× 100 (%)
Breakover Voltage (dv/dt = xV/µs)
Breakover Voltage (dv/dt = 1V/µs)
× 100 (%)
102
7
5
3
2
100
–40
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
T2+, G–
Typical Example
Breakover Voltage (Tj = 25°C)
Distribution
Breakover Voltage (Tj = t°C)
103
7
5
3
2
160
Typical Example
Tj = 150°C
140
120
100
III Quadrant
80
60
40
I Quadrant
20
0
101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104
Rate of Rise of Off-State Voltage (V/µs)
Rate of Rise of Off-State Voltage (V/µs)
Commutation Characteristics (Tj=125°C)
Commutation Characteristics (Tj=150°C)
102
7
5
3
2
Time
Main Voltage
Typical Example
(dv/dt)c
VD Tj = 125°C
Main Current
(di/dt)c IT = 4 A
IT
τ = 500 µs
τ
Time
VD = 200 V
f = 3 Hz
101
7 Minimum
5 Characteristics
Value
I Quadrant
3
2
100
7
III Quadrant
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
REJ03G1714-0100 Rev.1.00 Jul 08, 2008
Page 5 of 7
Critical Rate of Rise of Off-State
Commutating Voltage (V/µs)
Latching Current (mA)
Latching Current vs.
Junction Temperature
102
7 Typical Example Main Voltage
(dv/dt)c
5 Tj = 150°C
Main Current
IT = 4 A
IT
3 τ = 500 µs
τ
2 VD = 200 V
f = 3 Hz
101
7
I Quadrant
5
Time
VD
(di/dt)c
Time
III Quadrant
3
2
100
7
Minimum
Characteristics
Value
3
5 7 101
2 3
5 7 102
2 3
Rate of Decay of On-State
Commutating Current (A/ms)
BCR16RM-12LB
Gate Trigger Current (tw)
Gate Trigger Current (DC)
× 100 (%)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
5
4
3
2
Typical Example
IFGT I
IRGT I
IRGT III
102
7
5
4
3
2
101 0
10
2 3 4 5 7 101
2 3 4 5 7 102
Gate Current Pulse Width (µs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
Recommended Circuit Values Around The Triac
Load
C1
A
6V
V
V
6Ω
A
V
330Ω
Test Procedure II
Test Procedure I
6V
R1
A
6V
330Ω
330Ω
Test Procedure III
REJ03G1714-0100 Rev.1.00 Jul 08, 2008
Page 6 of 7
C0
R0
C1 = 0.1 to 0.47µF C0 = 0.1µF
R0 = 100Ω
R1 = 47 to 100Ω
BCR16RM-12LB
Package Dimensions
Previous Code
TO-3PFM / TO-3PFMV
15.6 ± 0.3
+ 0.4
– 0.2
2.0 ± 0.3
2.7 ± 0.3
φ3.2
MASS[Typ.]
5.2g
Unit: mm
5.5 ± 0.3
3.2 ± 0.3
4.0 ± 0.3
2.6
0.86
1.6
0.86
0.66
21.0 ± 0.5
RENESAS Code
PRSS0003ZA-A
5.0 ± 0.3
JEITA Package Code
SC-93
5.0 ± 0.3
19.9 ± 0.3
Package Name
TO-3PFM
+ 0.2
– 0.1
0.2
0.9 +– 0.1
5.45 ± 0.5
5.45 ± 0.5
Order Code
Lead form
Straight type
Standard packing
Magazine (Tube)
Quantity
30
Standard order code
Type name
Note : Please confirm the specification about the shipping in detail.
REJ03G1714-0100 Rev.1.00 Jul 08, 2008
Page 7 of 7
Standard order
code example
BCR16RM-12LB
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Notes:
1. This document is provided for reference purposes only so that Renesas customers may select the appropriate Renesas products for their use. Renesas neither makes
warranties or representations with respect to the accuracy or completeness of the information contained in this document nor grants any license to any intellectual property
rights or any other rights of Renesas or any third party with respect to the information in this document.
2. Renesas shall have no liability for damages or infringement of any intellectual property or other rights arising out of the use of any information in this document, including,
but not limited to, product data, diagrams, charts, programs, algorithms, and application circuit examples.
3. You should not use the products or the technology described in this document for the purpose of military applications such as the development of weapons of mass
destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws
and regulations, and procedures required by such laws and regulations.
4. All information included in this document such as product data, diagrams, charts, programs, algorithms, and application circuit examples, is current as of the date this
document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas products listed in this document,
please confirm the latest product information with a Renesas sales office. Also, please pay regular and careful attention to additional and different information to be
disclosed by Renesas such as that disclosed through our website. (http://www.renesas.com )
5. Renesas has used reasonable care in compiling the information included in this document, but Renesas assumes no liability whatsoever for any damages incurred as a
result of errors or omissions in the information included in this document.
6. When using or otherwise relying on the information in this document, you should evaluate the information in light of the total system before deciding about the applicability
of such information to the intended application. Renesas makes no representations, warranties or guaranties regarding the suitability of its products for any particular
application and specifically disclaims any liability arising out of the application and use of the information in this document or Renesas products.
7. With the exception of products specified by Renesas as suitable for automobile applications, Renesas products are not designed, manufactured or tested for applications
or otherwise in systems the failure or malfunction of which may cause a direct threat to human life or create a risk of human injury or which require especially high quality
and reliability such as safety systems, or equipment or systems for transportation and traffic, healthcare, combustion control, aerospace and aeronautics, nuclear power, or
undersea communication transmission. If you are considering the use of our products for such purposes, please contact a Renesas sales office beforehand. Renesas shall
have no liability for damages arising out of the uses set forth above.
8. Notwithstanding the preceding paragraph, you should not use Renesas products for the purposes listed below:
(1) artificial life support devices or systems
(2) surgical implantations
(3) healthcare intervention (e.g., excision, administration of medication, etc.)
(4) any other purposes that pose a direct threat to human life
Renesas shall have no liability for damages arising out of the uses set forth in the above and purchasers who elect to use Renesas products in any of the foregoing
applications shall indemnify and hold harmless Renesas Technology Corp., its affiliated companies and their officers, directors, and employees against any and all
damages arising out of such applications.
9. You should use the products described herein within the range specified by Renesas, especially with respect to the maximum rating, operating supply voltage range,
movement power voltage range, heat radiation characteristics, installation and other product characteristics. Renesas shall have no liability for malfunctions or damages
arising out of the use of Renesas products beyond such specified ranges.
10. Although Renesas endeavors to improve the quality and reliability of its products, IC products have specific characteristics such as the occurrence of failure at a certain
rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard against the possibility of physical injury, and injury or damage
caused by fire in the event of the failure of a Renesas product, such as safety design for hardware and software including but not limited to redundancy, fire control and
malfunction prevention, appropriate treatment for aging degradation or any other applicable measures. Among others, since the evaluation of microcomputer software
alone is very difficult, please evaluate the safety of the final products or system manufactured by you.
11. In case Renesas products listed in this document are detached from the products to which the Renesas products are attached or affixed, the risk of accident such as
swallowing by infants and small children is very high. You should implement safety measures so that Renesas products may not be easily detached from your products.
Renesas shall have no liability for damages arising out of such detachment.
12. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written approval from Renesas.
13. Please contact a Renesas sales office if you have any questions regarding the information contained in this document, Renesas semiconductor products, or if you have
any other inquiries.
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Colophon .7.2
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