<^Emi-donductoi ^Pioaucti, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
IRFP360, IRFP362
Avalanche-Energy-Rated
N-Channel Power MOSFETs
23 A and 20 A, 400 V
rosion) = 0.20 O and 0.25 O
N-CHANNEL ENHANCEMENT MODE
D
Features:
• Single pulse avalanche energy rated
• SOA is power-dissipation /imited
• Nanosecond switching speeds
• Linear transfer characteristics
• High input impedance
MCS-4MM
TERMINAL DIAGRAM
The IRFP360 and IRFP362 are advanced power MOSFETs
designed, tested, and guaranteed to withstand a specified
level of energy in the breakdown avalanche mode of operation These are n-channel enhancement-mode silicon-gate
power field-effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high-power bipolar switching
transistors requiring high speed and low gate-drive power.
These types can be operated directly from integrated
circuits
TERMINAL DESIGNATION
O
DRAIN
(TAB)
The IRFP-types are supplied in the JEDEC TO-247 plastic
package.
JEDEC TO-247
ABSOLUTE MAXIMUM RATINGS
IHFP360
IBFP362
Units
'D & T C - 25*C
Continuous Drain Current
Parameter
23
20
A
]0
Continuous Drain Current
14
13
A
Pulsed Drain Currant ®
92
80
A
® T C * 100°C
IQM
PD
® TC "
25°c
Max Power Dissipation
250
W
Linear Derating Factor
20
wrc
VQS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Erfjrgy ®
I AR
Avalanche Current ©
Tj
TSTG
Operating Junction
Storaoe Temperature Rang,*
Lead Temperature
±20
V
1200
(See f<9 14)
mj
23
A
-55 to 150
•c
300 (0.083 in (1 6mm) from case for 10s)
•c
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished b> Nl Semi-Conductors is believed to be both accurate and reliable at the time of going
(o press. However, NJ Semi-Conductors assumes no responsibility tor any errors or omissions discovered in its use
I Semi-Conductors enuniniges customers to verity that datasheets ;ire current before placing orders.
IRFP360, IRFP362
ELECTRICAL CHARACTERISTICS At Case Temperature (Tj) = 25° C Unless Otherwise Specified
Parameter
Type
Mm
BVDSS
Drain-to-Source Breakdown Voltage
IRFP380
IHFP362
400
-
-
V
VQS - 0V. ID - 2SOMA
RDS(on)
Static Drain-to-Source
On-State Resistance CD
IRFP360
—
0.18
020
Q
VQS . iov. ID - ISA
IRFP362
-
0.20
0.25
'D(on)
On-Stale Dram Current @
IRFP3SO
23
-
-
A
VDS>
IRFP362
20
Typ.
Max
Units
Tesi Conditions
!D(on)
VGS -
10V
VDS
VGS-
vGS(th)
O*« Threshold Voltage
ALL
2.0
-
4.0
V
9(5
Forward Transconductance (3)
ALL
14
21
-
S(D)
-
-
250
-
-
1000
M*
VDS * ° 8 «
ALL
-
-
500
nA
VGS - 20V
'OSS
Zef° Gat*
VottAfl* Drain Current
ALL
'CSS
Gate-to-Source Leakage Forward
-
x RDS<on)M«
'D -
25°MA
VDS £ 50V, IDS - 13A
VDS - Max Rating. VGS - 0V
Ma*
Flaling. VQS - 0V. Tj . 12S°C
'GSS
Gale-to-Source Leakage Reverse
ALL
-
-
-500
nA
VGS . -20V
Qg
Total Gate Charge
ALL
-
68
100
nC
VQS - iov, ID - 25A
Q gs
Gate- to- Source Charge
ALL
-
17
25
nC
Qgo-
Gate-to-Drain ("Miller") Charge
-
24
36
nC
VDS * °8 " Max R'linfl
S«e Fig 16
(Indepanden! of operating temperature)
"dfon)
Turn-On Deiay Time
ALL
-
22
33
ns.
VDQ - 200V, ID - 25A, RG - 4 3O
tr
Rise Time
ALL
-
94
140
ns
RD - 7.50
tyoff)
Turn-Off Delay Time
ALL
-
80
120
ns
See Fig 15
1,
Fall Time
ALL
-
66
99
ns
(Independent of operating temperature)
LQ
Internal Drain Inductance
ALL
5.0
nH
Measured from the drain
lead. 6mm (0.25 in.) from
package to center of die.
LS
Internal Source Inductance
ALL
13
nH
Measured from the source
lead. 6mm (0.25 in.) from
package to source
bonding pad.
CiM
input Capacitance
ALL
-
4000
-
PF
VQS - 0V. VDS '
C^,
Output Capacitance
ALL
-
550
-
PF
I - 1.0 MHz
Cry8
Reverse Transfer Capacitance
pF
See Fig 10
ALL
-
97
—
ALL
-
-
0.50
R«oc
Junction-to-Case
Rihca
Case-to-Sink
ALL
0.24
-
•c/w
•c/w
RIUJA
Junction-to-Ambient
ALL
-
40
-C/W
Mounting torque
ALL
10
in.etbs.
(]) Repetitive Rating; Pulse width limited by
maximum junction temperature (see figure 5)
Refer TO current HEXFET reliability report
-
-
.
Modified MOSFET symbol
snowing the internal
inductances
_ls
M*"* 1
M lpTL '
^V^CX
25V
Mounting surface flat, smooth, and greased
Typical socket mount
Standard 6-32 screw
Pulse width < 300 MS; Duty Cycle 5 2%
® @ VOD » 50V. Starting Tj = 25°C,
L - 4.0mH, RG = 25O. Peak IL » 23A
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Parameter
Type
Mar
Typ.
Max.
Units
(5
Continuous Source Current
(Body Diode)
ALL
-
-
23
A
'SM
Pulsed Source Current
(Body Oiode) ®
ALL
-
-
92
A
Vso
Oiode Forward Voltage ©
ALL
-
-
1.8
V
t fr
Reverse Recovery Time
ALL
200
460
1000
ns
QRP
Reverse Recovery Charge
ALL
3.1
7.1
16
MC
to,,
Forward Turn-On Time
ALL
Test Conditions
Modified MOSFET symbol showing the integral ,So
Reverse p-n junction rectifier.
/j 1 J\j - 25°C. IS = 23A. VGS = 0V
Tj = 250C. IF = 2SA, di/dt - 100 A/us
Intrinsic turn on time is negligible Turn-on speed is substantially controlled by Lg + LQ.