Central CMPDM7002AG Surface mount silicon n-channel enhancement-mode mosfet Datasheet

CMPDM7002A
CMPDM7002AG*
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-23 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPDM7002A
and CMPDM7002AG are special versions of the
2N7002 enhancement-mode N-Channel MOSFET
manufactured by the N-Channel DMOS Process,
designed for high speed pulsed amplifier and driver
applications. These special devices offer low rDS(ON)
and low VDS (ON).
MARKING CODES: CMPDM7002A:
C702A
CMPDM7002AG*: 702G
* Device is Halogen Free by design
MAXIMUM RATINGS: (TA=25°C)
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Source Current (Body Diode)
Maximum Pulsed Drain Current
Maximum Pulsed Source Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VDS
VDG
VGS
ID
IS
IDM
ISM
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless
SYMBOL
TEST CONDITIONS
IGSSF, IGSSR VGS=20V, VDS=0
IDSS
VDS=60V, VGS=0
IDSS
VDS=60V, VGS=0, TJ=125°C
ID(ON)
VGS=10V, VDS=10V
BVDSS
VGS=0, ID=10μA
VGS(th)
VDS=VGS, ID=250μA
VDS(ON)
VGS=10V, ID=500mA
VDS(ON)
VGS=5.0V, ID=50mA
VSD
VGS=0, IS=400mA
rDS(ON)
VGS=10V, ID=500mA
rDS(ON)
VGS=10V, ID=500mA, TJ=125°C
rDS(ON)
VGS=5.0V, ID=50mA
rDS(ON)
VGS=5.0V, ID=50mA, TJ=125°C
gFS
VDS=10V, ID=200mA
Crss
VDS=25V, VGS=0, f=1.0MHz
Ciss
VDS=25V, VGS=0, f=1.0MHz
Coss
VDS=25V, VGS=0, f=1.0MHz
otherwise noted)
MIN
500
60
1.0
60
60
40
280
280
1.5
1.5
350
-65 to +150
357
MAX
100
1.0
500
2.5
1.0
0.15
1.2
2.0
3.5
3.0
5.0
80
5.0
50
25
UNITS
V
V
V
mA
mA
A
A
mW
°C
°C/W
UNITS
nA
μA
μA
mA
V
V
V
V
V
Ω
Ω
Ω
Ω
mS
pF
pF
pF
R5 (9-February 2015)
CMPDM7002A
CMPDM7002AG*
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
ELECTRICAL
SYMBOL
Qg(tot)
Qgs
Qgd
ton, toff
CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
TEST CONDITIONS
TYP
MAX
VDS=30V, VGS=4.5V, ID=100mA
0.592
VDS=30V, VGS=4.5V, ID=100mA
0.196
VDS=30V, VGS=4.5V, ID=100mA
0.148
VDD=30V, VGS=10V, ID=200mA,
RG=25Ω, RL=150Ω
20
UNITS
nC
nC
nC
ns
SOT-23 CASE - MECHANICAL OUTLINE
1
2
3
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODES:
CMPDM7002A: C702A
CMPDM7002AG*: 702G
* Device is Halogen Free by design
R5 (9-February 2015)
w w w. c e n t r a l s e m i . c o m
CMPDM7002A
CMPDM7002AG*
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R5 (9-February 2015)
w w w. c e n t r a l s e m i . c o m
CMPDM7002A
CMPDM7002AG*
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
SERVICES
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development / Multi Discrete Modules (MDM™)
• Bare Die Available for Hybrid Applications
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R5 (9-February 2015)
w w w. c e n t r a l s e m i . c o m
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