NTE NTE16004 Silicon complementary transistors high current, general purpose Datasheet

NTE16004 (PNP) & NTE16005 (NPN)
Silicon Complementary Transistors
High Current, General Purpose
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V
Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A
Total Device Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.057mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17.5°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
75
–
–
V
VCE = 100V, VBE = 1.5V
–
–
0.1
mA
VCE = 70V, VBE = 1.5V, TC = +150°C
–
–
5.0
mA
IEBO
VBE = 7V, IC = 0
–
–
0.1
mA
hFE
IC = 500mA, VCE = 4V
30
–
130
IC = 1A, VCE = 2V
10
–
–
IC = 500mA, IB = 50mA
–
–
0.7
V
–
–
0.5
V
IC = 500mA, VCE = 4V
–
–
1.1
V
IC = 50mA, VCE = 4V, f = 10MHz
5
–
–
OFF Characteristics
Collector–Emitter Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
V(BR)CEO) IC = 100mA, IB = 0
ICEX
ON Characteristics (Note 1)
DC Current Gain
Collector–Emitter Saturation Voltage
NTE16004
VCE(sat)
NTE16005
Base–Emitter ON Voltage
VBE(on)
Small–Signal Characteristics
Small–Signal Current Gain
hfe
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
–
–
100
ns
–
–
80
ns
–
–
1000
ns
–
–
800
ns
Switching Characteristics
Turn–On Time
NTE16004
ton
VCC = 30V, IC = 500mA, IB1 = 50mA
NTE16005
Turn–Off Time
NTE16004
toff
NTE16005
VCC = 30V, IC = 500mA,
IB1 = IB2 = 50mA
.370 (9.39) Dia Max
.355 (9.03) Dia Max
.260
(6.6)
Max
.500
(12.7)
Min
.018 (0.45)
Base
Emitter
Collector/Case
45°
.031 (.793)
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