Production specification Schottky Barrier Diode B5817WS FEATURES Extremely low VF. Low stored change,majority carrier conduction. Low power loss/high efficient. MSL 1. Pb Lead-free APPLICATIONS For Use In Low Voltage, High Frequency Inverters Free Wheeling, And Polarity Protection Applications SOD-323 ORDERING INFORMATION Type No. Marking Package Code B5817WS SJ SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol Value Unit Non-Repetitive Peak reverse voltage VRM 24 V Peak repetitive Peak reverse voltage Working Peak Reverse voltage DC Reverse Voltage VRRM VRWM VR 20 V RMS Reverse Voltage VR(RMS) 14 V Average Rectified output Current Io 1 A Peak forward surge current@=8.3ms IFSM 10 A Power Dissipation Pd 235 mW Thermal Resistance Junction to Ambient RθJA 80 ℃/W Junction and Storage Temperature Rage TJ,TSTG -65 to +150 ℃ B009 Rev.A www.gmesemi.com 1 Production specification Schottky Barrier Diode B5817WS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test Condition Reverse breakdown voltage V(BR) IR=1mA Reverse voltage leakage current IR VR=20V Forward voltage VF Diode capacitance CD MIN MAX UNIT 20 V 1 mA IF=1A IF=3A 0.45 0.75 V VR=4V,f=1MHz 120 pF Average Forward Current(A) Peak Forward Surge Current(A) TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Case Temperature(℃) B009 Rev.A Number of Cycles at 60Hz www.gmesemi.com 2 Production specification Schottky Barrier Diode B5817WS TJ=125℃ TJ=25℃ PACKAGE OUTLINE Plastic surface mounted package SOD-323 SOD-323 K C A B D H E J Dim Min Max A 1.60 1.80 B 1.20 1.40 C 0.80 0.90 D 0.25 0.35 E 0.22 0.42 H 0.02 0.1 J 0.05 0.15 K 2.55 2.75 All Dimensions in mm B009 Rev.A www.gmesemi.com 3 Production specification Schottky Barrier Diode B5817WS SOLDERING FOOTPRINT 0.63 0.83 1.60 2.85 Unit ：mm PACKAGE INFORMATION Device Package Shipping B5817WS SOD-323 3000/Tape&Reel B009 Rev.A www.gmesemi.com 4