LESHAN RADIO COMPANY, LTD. Band-switching diode BA 892 FEATURES · Small plastic SMD package · Low diode capacitance · Low diode forward resistance · Small inductance. 1 APPLICATIONS · Low loss band-switching in VHF television tuners 2 · Surface mount band-switching circuits. DESCRIPTION SOD523 SC-79 Planar, high performance band-switch diode in a small SMD plastic package (SOD523). 1 CATHODE 2 ANODE LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). I SYMBOL PARAMETER VR IF continuous reverse voltage continuous forward current P tot T stg total power dissipation storage temperature Tj CONDITIONS T s =90°C junction temperature MIN. MAX. UNIT – – 35 100 V mA – -65 715 +150 mW °C -65 +150 °C ELECTRICAL CHARACTERISTICS T j = 25°C unless otherwise specified. SYMBOL PARAMETER VF forward voltage IR Cd reverse current diode capacitance CONDITIONS I F =10 mA diode forward resistance TYP. – MAX. 1 UNIT V – – 20 nA – 0.6 0.92 0.85 1.4 1.1 pF pF – 0.45 0.7 Ω – – 0.36 0.6 0.5 - Ω nH V R =30 V f = 1 MHz; note 1; V R= 1 V V R= 3 V rD MIN – f = 100 MHz; note 1; I F = 3 mA I F = 10 mA L S series inductance Note 1. Guaranteed on AQL basis; inspection level S4, AQL 1.0. THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-s thermal resistance from junction to soldering-point 85 K/W S22–1/2 LESHAN RADIO COMPANY, LTD. BA 892 10 2 r D( Ω) C d (pF) 1.6 1.2 1 0.8 0.4 f = 1 MHz; T j =25°C f = 100 MHz; T j =25°C 0 0 10 20 V R (V) Fig.1 Diode capacitance as a function of reverse voltage; typical values. 30 10 -1 0.1 1 10 I F (mA ) Fig.2 Diode forward resistance as a function of forward current; typical values. S22–2/2