Hitachi HM6264ALSP-10 8192-word x 8-bit high speed cmos static ram Datasheet

HM6264A Series
8192-word × 8-bit High Speed CMOS Static RAM
Type No.
Access
time
HM6264ASP-10
100 ns
HM6264ASP-12
120 ns
HM6264ASP-15
150 ns
Features
• Low-power standby
— 0.1 mW (typ)
— 10 µW (typ) L-/LL-version
• Low power operation
— 15 mW/MHz (typ)
• Fast access time
— l00/120/150 ns (max)
• Single +5 V supply
• Completely static memory
— No clock or timing strobe required
• Equal access and cycle time
• Common data input and output, three-state
output
• Directly TTL compatible
— All inputs and outputs
• Battery back up operation capability
(L-/LL-version)
Ordering Information
Type No.
Access
time
HM6264AP-10
100 ns
HM6264AP-12
120 ns
HM6264AP-15
150 ns
HM6264ALP-10
100 ns
HM6264ALP-12
120 ns
HM6264ALP-15
150 ns
Package
300-mil, 28-pin
plastic DIP
(DP-28N)
HM6264ALSP-10 100 ns
HM6264ALSP-12 120 ns
HM6264ALSP-15 150 ns
HM6264ALSP-10L 100 ns
HM6264ALSP-12L 120 ns
HM6264ALSP-15L 150 ns
HM6264AFP-10
100 ns
HM6264AFP-12
120 ns
HM6264AFP-15
150 ns
28-pin plastic
SOP *1
(FP-28D/DA)
Package
HM6264ALFP-10 100 ns
600-mil, 28-pin
plastic DIP
(DP-28)
HM6264ALFP-12 120 ns
HM6264ALFP-15 150 ns
HM6264ALFP-10L 100 ns
HM6264ALFP-12L 120 ns
HM6264ALFP-15L 150 ns
HM6264ALP-10L 100 ns
Note: 1. T is added to the end of the type number
for a SOP of 3.00 mm (max) thickness.
HM6264ALP-12L 120 ns
HM6264ALP-15L 150 ns
1
HM6264A Series
HM6264A Series
Pin Arrangement
NC
A12
A7
A6
A5
A4
A3
1
2
A2
A1
A0
8
9
10
11
12
21
20
19
18
17
VCC
WE
CS2
A8
A9
A11
OE
A10
CS1
I/O8
I/O7
I/O6
13
14
16
15
I/O5
I/O4
I/O1
I/O2
I/O3
VSS
28
27
26
25
24
3
4
5
6
7
23
22
(Top view)
Block Diagram
A11
A8
A9
A7
A12
A5
A6
A4
Row
decoder
I/O1
Column I/O
Input
data
control
I/O8
CS2
CS1
WE
OE
2
Memory array
256 × 256
Column decoder
A1 A2A0A10 A3
Timing pulse generator
VCC
VSS
HM6264A Series
HM6264A Series
Truth Table
WE
CS1
CS2
OE
Mode
I/O pin
VCC current
×
H
×
×
Not selected
(power down)
High Z
ISB, ISB1
×
×
L
×
High Z
ISB, ISB1
H
L
H
H
Output disabled
High Z
ICC
H
L
H
L
Read
Dout
ICC
Read cycle
L
L
H
H
Write
Din
ICC
Write cycle 1
L
L
H
L
Write
Din
ICC
Write cycle 2
Note:
×: Don’t care.
Note
Absolute Maximum Ratings
Parameter
Symbol
Rating
Unit
Terminal voltage *1
VT
–0.5 *2 to +7.0
V
Power dissipation
PT
1.0
W
Operating temperature
Topr
0 to +70
°C
Storage temperature
Tstg
–55 to +125
°C
Storage temperature (under bias)
Tbias
–10 to +85
°C
Notes: 1. With respect to VSS.
2. –3.0 V for pulse width ≤ 50 ns
Recommended DC Operating Conditions (Ta = 0 to +70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Supply voltage
VCC
4.5
5.0
5.5
V
VSS
0
0
0
V
VIH
2.2
—
6.0
V
VIL
–0.3 *1
—
0.8
V
Input voltage
Note:
1. –3.0 V for pulse width ≤ 50 ns
3
HM6264A Series
HM6264A Series
DC and Operating Characteristics (VCC = 5 V ± 10%,VSS = 0 V, Ta = 0 to +70°C)
Parameter
Symbol
Min
Typ
Max
Unit
Test condition
Input leakage current
|ILI|
—
—
2
µA
Vin = VSS to VCC
Output leakage current |ILO|
—
—
2
µA
CS1 = VIH or CS2 = VIL or OE = VIH or
WE = VIL, VI/O = VSS to VCC
Operating power
supply current
ICCDC
—
7
15
mA
CS1 = VIL, CS2 = VIH, II/O = 0 mA
Average operating
current
ICC1
—
—
30
30
45*5
55*6
mA
Min. cycle, duty = 100%,
CS1 = VIL, CS2 = VIH, II/O = 0 mA
ICC2
—
3
5
mA
Cycle time = 1 µs, duty = 100%,
II/O = 0 mA, CS1 ≤ 0.2 V,
CS2 ≥ VCC – 0.2 V, VIH ≥ VCC – 0.2 V,
VIL ≤ 0.2 V
—
1
3
mA
CS1 = VIH or CS2 = VIL
Standby power supply ISB
current
ISB1 *2
Output voltage
Notes: 1.
2.
3.
4.
5.
6.
—
0.02 2
mA
CS1 ≥ VCC – 0.2 V, CS2 ≥ VCC – 0.2 V or
————————————
—
2*3
100*3 µA
0 V ≤ CS2 ≤ 0.2 V, 0 V ≤ Vin
—————————
—
2*4
50*4
VOL
—
—
0.4
V
IOL = 2.1 mA
VOH
2.4
—
—
V
IOH = –1.0 mA
Typical values are at VCC = 5.0 V, Ta = 25°C and not guaranteed.
VIL min = –0.3 V
These characteristics are guaranteed only for the L-version.
These characteristics are guaranteed only for the LL-version.
For 120 ns/150 ns version.
For 100 ns version.
Capacitance (f = 1 MHz, Ta = 25°C)*1
Parameter
Symbol
Typ
Max
Unit
Test condition
Input capacitance
Cin
—
5
pF
Vin = 0 V
Input/output capacitance
CI/O
—
7
pF
VI/O = 0 V
Note:
4
1. This parameter is sampled and is not 100% tested.
HM6264A Series
HM6264A Series
AC Characteristics (VCC = 5 V ± 10%, Ta = 0 to +70°C)
AC Test Conditions:
•
•
•
•
Input pulse levels: 0.8 V/2.4 V
Input rise and fall time: 10 ns
Input timing reference level: 1.5 V
Output timing reference level
— HM6264A-10: 1.5 V
— HM6264A-12/15: 0.8 V/2.0 V
• Output load: 1 TTL gate and CL (100 pF) (including scope and jig)
Read Cycle
Parameter
Symbol
HM6264A-10
———————
Min
Max
Read cycle time
tRC
100
—
120
—
150
—
ns
Address access time
tAA
—
100
—
120
—
150
ns
CS1
tCO1
—
100
—
120
—
150
ns
CS2
tCO2
—
100
—
120
—
150
ns
tOE
—
50
—
60
—
70
ns
CS1
tLZ1
10
—
10
—
15
—
ns
CS2
tLZ2
10
—
10
—
15
—
ns
Output enable to output in low Z
tOLZ
5
—
5
—
5
—
ns
CS1
tHZ1
0
35
0
40
0
50
ns
CS2
tHZ2
0
35
0
40
0
50
ns
Output disable to output in high Z
t
0
35
0
40
0
50
ns
Output hold from address change
t
10
—
10
—
10
—
ns
Chip selection to output
Output enable to output valid
Chip selection to output
in low Z
Chip deselection to
output in high Z
Notes
OHZ
OH
HM6264A-12
———————
Min
Max
HM6264A-15
———————
Min
Max
Unit
1. tHZ and tOHZ are defined as the time at which the outputs to achieve the open circuit
condition and are not referred to output voltage levels.
2. At any given temperature and voltage condition, tHZ maximum is less than tLZ minimum both for
a given device and from device to device.
5
HM6264A Series
HM6264A Series
Read Timing Waveform
tRC
Address
tAA
tCO1
CS1
tLZ1
tCO2
CS2
tHZ1
tLZ2
tOE
tHZ2
tOLZ
OE
tOHZ
Dout
Valid Data
tOH
Note: WE is high for read cycle.
Write Cycle
Parameter
Symbol
HM6264A-10
———————
Min
Max
Write cycle time
tWC
100
—
120
—
150
—
ns
Chip selection to end of write
tCW
80
—
85
—
100
—
ns
Address setup time
tAS
0
—
0
—
0
—
ns
Address valid to end of write
tAW
80
—
85
—
100
—
ns
Write pulse width
tWP
60
—
70
—
90
—
ns
Write recovery time
tWR
0
—
0
—
0
—
ns
Write to output in high Z
tWHZ
0
35
0
40
0
50
ns
Data to write time overlap
tDW
40
—
40
—
50
—
ns
Data hold from write time
tDH
0
—
0
—
0
—
ns
Output enable to output in high Z
tOHZ
0
35
0
40
0
50
ns
Output active from end of write
tOW
5
—
5
——
5
—
ns
6
HM6264A-12
———————
Min
Max
HM6264A-15
———————
Min
Max
Unit
HM6264A Series
HM6264A Series
Write Timing Waveform (1) (OE Clock)
tWC
Address
OE
tCW *2
tWR *4
CS1
*6
CS2
WE
tAW
tAS *3
tWP *1
tOHZ *5
Dout
Din
tDW
tDH
Valid Data
7
HM6264A Series
HM6264A Series
Write Timing Waveform (2) (OE Low Fix)
tWC
Address
tAW
tWR *4
tCW
*2
*6
CS1
tCW *2
CS2
tWP *1
WE
tAS *3
tOH
*5
tOW
tWHZ
*7
Dout
tDW
*8
tDH
*9
Din
Valid Data
Notes: 1. A write occurs during the overlap of a low CS1, a high CS2, and a low WE. A write begins
at the latest transition among CS1 going low, CS2 going high and WE going low. A write
ends at the earliest transition among CS1 going high, CS2 going low and WE going high.
Time tWP is measured from the beginning of write to the end of write.
2. tCW is measured from the later of CS1 going low or CS2 going high to the end of write.
3. tAS is measured from the address valid to the beginning of write.
4. tWR is measured from the earliest of CS1 or WE going high or CS2 going low to the end
of the write cycle.
5. During this period, I/O pins are in the output state, therefore the input signals of opposite
phase to the outputs must not be applied.
6. If CS1 goes low simultaneously with WE going low or after WE goes low, the outputs
remain in high impedance state.
7. Dout is the same phase of the latest written data in this write cycle.
8. Dout is the read data of the next address.
9. If CS1 is low and CS2 is high during this period, I/O pins are in the output state. Input signals
of opposite phase to the outputs must not be applied to I/O pins
8
HM6264A Series
HM6264A Series
Low VCC Data Retention
In data retention mode, CS2 controls the address,
WE, CS1, OE, and the Din buffer. If CS2 controls
data retention mode, Vin (for these inputs) can be
in the high impedance state. If CS1 controls the
data retention mode, CS2 must satisfy either
CS2 ≥ VCC – 0.2 V or CS2 ≤ 0.2 V. The other
input levels (address, WE, OE, I/O) can be in the
high impedance state.
Low VCC Data Retention Characteristics (Ta = 0 to +70°C)
This characteristics is guaranteed only L/LL-version.
Parameter
Symbol
Min
Typ
Max
Unit
Test Condition
VCC for data retention
VDR
2.0
—
—
V
CS1 ≥ VCC – 0.2 V,
CS2 ≥ VCC– 0.2 V, or
CS2 ≤ 0.2 V
Data retention current
ICCDR
—
1*1
50*1
µA
—
1*2
25*2
VCC = 3.0 V,
CS1 ≥ VCC – 0.2 V,
CS2 ≥ VCC – 0.2 V, or
0 V ≤ CS2 ≤ 0.2 V, 0 V ≤ Vin
—
—
ns
See retention waveform
—
—
ns
See retention waveform
Chip deselect to data
retention time
t
0
Operation recovery time
tR
t
CDR
*3
RC
Notes: 1. VIL min = –0.3 V, 20 µA max at Ta = 0 to 40°C. These characteristics are guaranteed only for
the L-version.
2. VIL min = –0.3 V, 10 µA max at Ta = 0 to 40°C. These characteristics are guaranteed only for
the LL-version.
3. tRC = Read cycle time.
Low VCC Data Retention Waveform (1) (CS1 Controlled)
tCDR
Data retention mode
tR
VCC
4.5 V
2.2 V
VDR
CS1
0V
CS1 ≥ VCC – 0.2 V
9
HM6264A Series
HM6264A Series
Low VCC Data Retention Waveform (2) (CS2 Controlled)
Data retention mode
VCC
4.5 V
tCDR
tR
CS2
VDR
0.4 V
0V
10
CS2 ≤ 0.2 V
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