Renesas FY6BCH-02 Mitsubishi nch power mosfet high-speed switching use Datasheet

To all our customers
Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
FY6BCH-02
OUTLINE DRAWING
➄
➀
➃
6.4
4.4
➇
Dimensions in mm
1.1
3.0
➀ ➇ DRAIN
➁ ➂ ➅ ➆ SOURCE
➃ ➄ GATE
0.275
0.65
➀
➇
➃
● 2.5V DRIVE
● VDSS .................................................................................. 20V
● rDS (ON) (MAX) .............................................................. 30mΩ
● ID ........................................................................................... 6A
➄
➁➂
➅➆
TSSOP8
APPLICATION
Li-ion battery, DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Parameter
VDSS
VGSS
Drain-source voltage
Gate-source voltage
ID
IDM
IDA
Drain current
Drain current (Pulsed)
Avalanche drain current (Pulsed)
IS
ISM
PD
Tch
Tstg
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
—
Weight
Ratings
Unit
VGS = 0V
VDS = 0V
Conditions
20
±10
V
V
L = 10µH
6
42
6
A
A
A
1.5
6.0
1.5
–55 ~ +150
–55 ~ +150
A
A
W
°C
°C
0.035
g
Typical value
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
Drain-source breakdown voltage
IGSS
IDSS
VGS (th)
rDS (ON)
rDS (ON)
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
VDS (ON)
yfs
Ciss
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Coss
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-a)
trr
Limits
Test conditions
Turn-off delay time
Fall time
Source-drain voltage
Typ.
Max.
ID = 1mA, VGS = 0V
VGS = ±10V, VDS = 0V
VDS = 20V, VGS = 0V
20
—
—
—
—
—
—
±0.1
0.1
V
µA
mA
ID = 1mA, VDS = 10V
ID = 6A, VGS = 4V
ID = 3A, VGS = 2.5V
ID = 6A, VGS = 4V
ID = 6A, VDS = 10V
0.5
—
—
—
0.9
25
32
0.15
1.3
30
40
0.18
V
mΩ
mΩ
V
—
—
—
—
13.0
800
280
200
—
—
—
—
S
pF
pF
pF
—
—
—
—
20
55
90
100
—
—
—
—
ns
ns
ns
ns
—
—
1.10
V
—
—
—
50
83.3
—
°C/W
ns
VDS = 10V, VGS = 0V, f = 1MHz
VDD = 10V, ID = 3A, VGS = 4V, RGEN = RGS = 50Ω
IS = 1.5A, VGS = 0V
Channel to ambient
Thermal resistance
Reverse recovery time
Unit
Min.
IS = 1.5A, dis/dt = –50A/µs
PERFORMANCE CURVES
MAXIMUM SAFE OPERATING AREA
5
1.6
1.2
0.8
0.4
100µs
101
7
5
1ms
3
2
10ms
100
7
5
100ms
3
2
10–1 TC = 25°C
0
0
50
100
150
7
5
200
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 5V
4V
3V
2.5V
2V
12
8
TC = 25°C
Pulse Test
4
1.5V
PD = 1.5W
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
DRAIN CURRENT ID (A)
10
16
0
DC
Single Pulse
2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 2
CASE TEMPERATURE TC (°C)
20
DRAIN CURRENT ID (A)
tw = 10µs
3
2
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
2.0
VGS = 5V
4V
3V
2.5V
2V
8
6
PD = 1.5W
4
1.5V
2
0
TC = 25°C
Pulse Test
0
0.1
0.2
0.3
0.4
0.5
DRAIN-SOURCE VOLTAGE VDS (V)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
100
TC = 25°C
Pulse Test
0.8
0.6
ID = 12A
6A
3A
0.4
0.2
0
0
1.0
2.0
3.0
TC = 25°C
Pulse Test
80
60
VGS = 2.5V
40
4V
20
0
10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
5.0
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
TRANSFER CHARACTERISTICS
(TYPICAL)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
20
102
TC = 25°C
VDS = 10V
Pulse Test
16
FORWARD TRANSFER
ADMITTANCE yfs (S)
DRAIN CURRENT ID (A)
4.0
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
1.0
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
12
8
4
VDS = 10V
7 Pulse Test
5
4
TC = 25°C
3
75°C
2
125°C
101
7
5
4
3
2
0
0
1.0
2.0
3.0
4.0
100
5 7 100
5.0
2
3 4 5 7 101
2
3 4 5
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
2
2
td(off)
Ciss
7
5
4
3
Coss
2
Crss
102
7
5
4 TCh = 25°C
3 f = 1MHZ
VGS = 0V
2
10–1 2 3 4 5 7 100
2
3 4 5 7 101
DRAIN-SOURCE VOLTAGE VDS (V)
102
SWITCHING TIME (ns)
CAPACITANCE
Ciss, Coss, Crss (pF)
103
7
5
4 tr
3
2
tf
td(on)
101
7
5 TCh = 25°C
4 VDD = 10V
3 VGS = 4V
RGEN = RGS = 50Ω
2
10–1 2 3 4 5 7 100
2
3 4 5 7 101
DRAIN CURRENT ID (A)
Sep. 2001
MITSUBISHI Nch POWER MOSFET
FY6BCH-02
HIGH-SPEED SWITCHING USE
5.0
SOURCE CURRENT IS (A)
3.0
VDS = 7V
10V
15V
2.0
1.0
0
2
4
6
8
12
4
0.4
0.8
1.2
1.6
2.0
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
2.0
3
2
100
7
5
3
2
–50
0
50
100
1.2
0.8
0.4
0
150
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
VDS = 10V
ID = 1mA
1.6
CHANNEL TEMPERATURE Tch (°C)
0.4
0
GATE CHARGE Qg (nC)
VGS = 4V
7 ID = 6A
5 Pulse Test
1.4
TC = 125°C
75°C
25°C
8
0
101
10–1
VGS = 0V
Pulse Test
16
10
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
20
TCh = 25°C
ID = 6A
4.0
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch – a) (°C/ W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
102
7 D = 1.0
5
3 0.5
2
1 0.2
10
7 0.1
5
3 0.05
2
100
7
5
3
2
PDM
0.02
0.01
Single Pulse
tw
T
D= tw
T
10–1 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101 2 3 5 7102 2 3 5 7103
PULSE WIDTH tw (s)
Sep. 2001
Similar pages