MBR1035 thru MBR10200 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TO-220AC MECHANICAL DATA Case: TO-220AC Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix "G" on packing code - halogen-free Base P/N with prefix "H" on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test, with prefix "H" on packing code meet JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 5 in-lbs maximum Weight: 1.88 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL MBR MBR MBR MBR MBR 1035 1045 1050 1060 1090 MBR MBR MBR 10100 10150 10200 UNIT Maximum repetitive peak reverse voltage VRRM 35 45 50 60 90 100 150 200 V Maximum RMS voltage VRMS 24 31 35 42 63 70 105 140 V Maximum DC blocking voltage VDC 35 45 50 60 90 100 150 200 V Maximum average forward rectified current IF(AV) 10 A Peak repetitive forward current (Rated VR, Square Wave, 20KHz) IFRM 20 A Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Peak repetitive reverse surge current (Note 1) IRRM 1.0 VF 0.70 0.80 0.85 1.05 0.57 0.70 0.71 - Maximum instantaneous forward voltage (Note 2) IF=10A, TJ=25℃ IF=10A, TJ=125℃ Maximum reverse current @ rated VR TJ=25 ℃ TJ=125 ℃ Voltage rate of change (Rated VR) Typical thermal resistance Operating junction temperature range Storage temperature range IR dV/dt 0.5 A 0.1 15 6 10 10000 V mA V/μs O RθJC 3 TJ - 55 to +150 O C - 55 to +175 O C TSTG C/W Note 1: tp = 2.0 μs, 1.0KHz Note 2: Pulse test with PW=300μs, 1% duty cycle Document Number: DS_D1308050 Version: L13 MBR1035 thru MBR10200 Taiwan Semiconductor ORDERING INFORMATION AEC-Q101 PART NO. QUALIFIED MBR10xx (Note 1) PACKING CODE Prefix "H" GREEN COMPOUND CODE C0 PACKAGE PACKING TO-220AC 50 / Tube Suffix "G" Note 1: "xx" defines voltage from 35V (MBR1035) to 200V (MBR10200) EXAMPLE PREFERRED P/N PART NO. AEC-Q101 PACKING CODE QUALIFIED MBR1060 C0 MBR1060 C0 MBR1060 C0G MBR1060 C0 MBR1060HC0 MBR1060 H GREEN COMPOUND DESCRIPTION CODE G Green compound C0 AEC-Q101 qualified RATINGS AND CHARACTERISTICS CURVES (TA=25℃ unless otherwise noted) FIG. 2- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 12 AVERAGE FORWARD A CURRENT (A) 10 8 6 RESISTIVE OR INDUCTIVELOAD WITH HEATSINK 4 MBR1035-MBR1045 MBR1050-MBR10200 2 0 0 50 100 150 PEAK FORWARD SURGE CURRENT (A) FIG.1- FORWARD CURRENT DERATING CURVE 175 150 125 100 75 50 25 0 1 10 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE (oC) FIG. 4- TYPICAL REVERSE CHARACTERISTICS FIG. 3- TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 100 10 TJ=125℃ TJ=25℃ 1 0.1 MBR1035-MBR1045 MBR1050-MBR1060 MBR1090-MBR10100 MBR10150-MBR10200 INSTANTANEOUS REVERSE CURRENT (mA) INSTANTANEOUS FORWARD CURRENT (A) Pulse Width=300μs 1% Duty Cycle 10 TJ=125℃ 1 TJ=75℃ 0.1 MBR1035-MBR1060 MBR1090-MBR10200 0.01 TJ=25℃ 0.001 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 FORWARD VOLTAGE (V) Document Number: DS_D1308050 1 1.1 1.2 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: L13 MBR1035 thru MBR10200 Taiwan Semiconductor FIG. 6- TYPICAL TRANSIENT THERMAL CHARACTERISTIC FIG. 5- TYPICAL JUNCTION CAPACITANCE 100 f=1.0MHz Vsig=50mVp-p TRANSIENT THERMAL IMPEDANCE (℃/W) JUNCTION CAPACITANCE (pF) A 10000 1000 10 1 0.1 100 0.1 1 10 100 0.01 0.1 1 10 100 T-PULSE DURATION. (sec) REVERSE VOLTAGE (V) PACKAGE OUTLINE DIMENSIONS DIM. Unit (mm) Unit (inch) Min Max Min Max A - 10.50 - 0.413 B 2.62 3.44 0.103 0.135 C 2.80 4.20 0.110 0.165 D 0.68 0.94 0.027 0.037 E 3.54 4.00 0.139 0.157 F 14.60 16.00 0.575 0.630 G 0.00 1.60 0.000 0.063 H 13.19 14.79 0.519 0.582 I 4.95 5.20 0.195 0.205 J 4.42 4.76 0.174 0.187 K 1.14 1.40 0.045 0.055 L 5.84 6.86 0.230 0.270 M 2.20 2.80 0.087 0.110 N 0.35 0.64 0.014 0.025 MARKING DIAGRAM P/N = Marking Code G = Green Compound YWW = Date Code F = Factory Code Document Number: DS_D1308050 Version: L13 MBR1035 thru MBR10200 Taiwan Semiconductor CREAT BY ART Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied,to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. Document Number: DS_D1308050 Version: L13