H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Features Applications ■ AC input response (H11AA814 only) H11AA814 Series ■ AC line monitor ■ Unknown polarity DC sensor ■ Telephone line interface ■ Compatible to Pb-free IR reflow soldering ■ Compact 4-pin dual in-line package ■ Current transfer ratio in selected groups: H11AA814: 20-300% H11A817: 50-600% H11AA814A: 50-150% H11A817A: 80-160% H11A617A: 40%-80% H11A817B: 130-260% H11A617B: 63%-125% H11A817C: 200-400% H11A617C: 100%-200% H11A817D: 300-600% H11A617D: 160%-320% ■ C-UL, UL and VDE approved ■ High input-output isolation voltage of 5000Vrms ■ Minimum BVCEO of 70V guaranteed tm H11A617 and H11A817 Series ■ Power supply regulators ■ Digital logic inputs ■ Microprocessor inputs Description The H11AA814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The H11A617/817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. Package Schematics H11AA814 4 1 ANODE, CATHODE 1 4 COLLECTOR CATHODE, ANODE 2 3 EMITTER H11A617 & H11A817 ANODE 1 CATHODE 2 ©2005 Fairchild Semiconductor Corporation H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 1 4 COLLECTOR 3 EMITTER www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers July 2006 Symbol Parameter Device* Value Units Storage Temperature All -55 to +150 °C TOPR Operating Temperature All -55 to +100 °C TSOL Lead Solder Temperature All 260 for 10 sec °C Total Device Power Dissipation (-55°C to 50°C) All 200 mW 814 Series 617, 817 Series ±50 50 mA 617 Series 817 Series 6 6 V TOTAL DEVICE TSTG PD EMITTER IF Continuous Forward Current VR Reverse Voltage PD LED Power Dissipation (25°C ambient) No derating up to 100°C All 70 mW VCEO Collector-Emitter Voltage All 70 V VECO Emitter-Collector Voltage 814, 817 Series 617 Series 6 7 V DETECTOR IC Continuous Collector Current All 50 mA PD Detector Power Dissipation (25°C ambient) Derate above 90°C All 150 mW 2.9 mW/°C Electrical Characteristics (TA = 25°C Unless otherwise specified.) Individual Component Characteristics Symbol Parameter Test Conditions Device Min. Typ.* Max. Unit V EMITTER VF IR Input Forward Voltage IF = 60mA 617 Series 1.35 1.65 IF = 20mA 817 Series 1.2 1.5 IF = ±20mA 814 Series 1.2 1.5 VR = 6.0V 617 Series .001 10 VR = 5.0V 817 Series Reverse Leakage Current µA DETECTOR BVCEO Collector-Emitter Breakdown Voltage IC = 0.1 mA, IF = 0 ALL 70 100 V BVECO Emitter-Collector Breakdown Voltage IE = 10 µA, IF = 0 814, 817 Series 6 10 V 617 Series 7 10 Collector-Emitter Dark Current VCE = 10V, IF = 0 ICEO H11AA814/A, 817 Series, H11A617C/D H11A617A/B 1 100 nA 50 *Typical values at TA=25°C 2 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Absolute Maximum Ratings (TA = 25°C Unless otherwise specified.) Symbol DC Characteristic CTR Current Transfer Ratio Test Conditions Device IF = ±1mA, VCE = H11AA814 20 300 % IF = ±1mA, VCE = 5V(1) H11AA814A 50 150 % H11A617A 40 80 % H11A617B 63 125 % H11A617C 100 200 % H11A617D 160 320 % (IF = 10mA, VCE = (IF = 5mA, VCE = 5V(1) 5V(1) IF = 1mA, VCE = 5V(1) VCE (SAT) Collector-Emitter Saturation Voltage Min Typ* Max Unit 5V(1) IC = 1mA, IF = ±20mA IC = 2.5mA, IF = 10mA IC = 1mA, IF = 20mA H11A817 50 600 % H11A817A 80 160 % H11A817B 130 260 % H11A817C 200 400 % H11A817D 300 600 H11A617A 13 % H11A617B 22 % H11A617C 34 % H11A617D 56 % % 814 series 0.2 617 series 0.4 817 series 0.2 V AC CHARACTERISTIC tr tf Rise Time Fall Time IC = 2mA, VCE = 2 V, RL = 100Ω(2) ALL 4 18 µs 100Ω(2) ALL 3 18 µs IC = 2mA, VCE = 2 V, RL = Isolation Characteristics Symbol Characteristic Test Conditions Min. 5000 VISO Input-Output Isolation Voltage (note 3) (f = 60Hz, t = 1 min) (II-O ≤ 2µA) RISO Isolation Resistance (VI-O = 500 VDC) CISO Isolation Capacitance (VI-O = 0, f = 1 MHz) 5x1010 Typ.* Max. Units Vac(rms) 1011 0.6 Ω 1.0 pf *Typical values at TA = 25°C. Notes: 1. Current Transfer Ratio (CTR) = IC/IF x 100%. 2. For test circuit setup and waveforms, refer to Figure 13. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. 3 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Transfer Characteristics (TA = 25°C Unless otherwise specified.) Fig. 2. Relative Current Transfer Ratio vs. Ambient Temperature Fig. 1 Current Transfer Ratio vs. Forward Current 160 200 VCE = 5V Ta = 25°C CURRENT TRANSFER RATIO CTR ( %) 180 H11AA814 140 RELATIVE CURRENT TRANSFER RATIO (%) 160 140 120 814 100 617 817 80 60 40 20 0 1 2 5 10 20 IF = 1mA VCE = 5V 120 100 IF = 5mA VCE = 5V 80 H11AA617 & H11AA817 60 40 20 0 -60 50 -40 FORWARD CURRENT IF (mA) Fig. 3 Collector-Emitter Saturation Voltage vs. Ambient Temperature 20 40 60 80 100 Fig. 4 Forward Current vs. Forward Voltage IF = 20 mA IC = 1 mA TA = 100°C FORWARD CURRENT IF (mA) 0.10 0.08 0.06 0.04 0.02 75°C 50°C 10 25°C 0°C -30°C 1 -55°C 0.1 0.00 -60 -40 -20 0 20 40 60 80 0.5 100 1.0 1.5 2.0 FORWARD VOLTAGE VF (V) TA - AMBIENT TEMPERATURE (˚C) Fig. 6 Collector Current vs. Collector-Emitter Voltage (H11AA617 and H11AA817) Fig. 5 Collector Current vs. Collector-Emitter Voltage (H11AA814) 30 50 Ta = 25°C I I F = 30 m A COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 0 100 0.12 VCE (SAT) - COLLECTOR-EMITTER SATURATION VOLTAGE (V) -20 AMBIENT TEMPERATURE TA (°C) 40 20mA Pc (Max) 30 10mA 20 5mA 10 IF = 30mA Ta = 25°C 20mA 25 Pc(MAX.) 20 15 10 mA 10 5m A 5 1mA 0 0 0 10 20 30 40 50 60 70 80 90 0 100 1 2 3 4 5 6 7 8 9 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR-EMITTER VOLTAGE VCE (V) 4 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Typical Performance Curves Fig. 7 Collector Dark Current vs Ambient Temperature Fig. 8 Response Time vs. Load Resistance 500 V CE VCE = 2V = 20V 200 1000 100 RESPONSE TIME (ms) COLLECTOR DARK CURRENT ICEO (nA) 10000 100 10 1 IC = 2mA Ta = 25°C 50 tr 20 tf 10 td 5 ts 2 1 0.1 0.5 0.01 -60 -40 -20 0 20 40 60 80 0.2 0.05 100 0.1 AMBIENT TEMPERATURE TA (°C) 0.2 0.5 1 2 5 Fig. 9. Frequency Response (H11AA814) Fig. 10. Frequency Response (H11AA617 and H11AA817) VCE = 2V IC = 2mA Ta = 25°C VCE = 2V IC = 2mA Ta = 25°C 0 VOLTAGE GAIN AV (dB) VOLTAGE GAIN AV (dB) 0 100Ω 1kΩ RL= 10kΩ 10 LOAD RESISTANCE RL (kW) -10 10 RL=10kΩ 1kΩ 100Ω 20 -20 0.2 0.5 15 2 10 100 0.5 1000 1 2 FREQUENCY f (kHz) COLLECTOR POWER DISSIPATION PC (mW) LED POWER DISSIPATION PLED (mW) 100 80 60 40 20 -40 -20 0 20 40 60 10 20 50 100 500 Fig. 12. Collector Power Dissipation vs. Ambient Temperature Fig. 11. LED Power Dissipation vs. Ambient Temperature 0 -55 5 FREQUENCY f (kHz) 80 100 120 150 100 50 0 -55 -40 -20 0 20 40 60 80 100 120 AMBIENT TEMPERATURE TA (°C) AMBIENT TEMPERATURE TA (°C) 5 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 200 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Typical Performance Curves (Continued) H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Test Circuit Figure 13. Test Circuit Test Circuit for Response Time Vcc Input RD RL Input Output Output 10% 90% td ts tr tf Test Circuit for Frequency Response Vcc RL RD Output 6 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 www.fairchildsemi.com Through Hole Surface Mount 0.276 (7.00) 0.236 (6.00) 0.200 (5.10) 0.161 (4.10) 0.312 (7.92) 0.288 (7.32) 0.200 (5.10) 0.161 (4.10) SEATING PLANE SEATING PLANE 0.312 (7.92) 0.288 (7.32) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 0.157 (4.00) 0.118 (3.00) 0.010 (0.26) 0.130 (3.30) 0.091 (2.30) 0.051 (1.30) 0.043 (1.10) 0.020 (0.51) TYP 0.412 (10.46) 0.388 (9.86) 0.010 (0.26) 0.150 (3.80) 0.110 (2.80) 0.110 (2.79) 0.090 (2.29) 0.300 (7.62) typ 0.110 (2.79) 0.090 (2.29) Lead Coplanarity 0.004 (0.10) MAX 0.024 (0.60) 0.016 (0.40) 0.4” Lead Spacing SEATING PLANE 0.049 (1.25) 0.030 (0.76) 0.024 (0.60) 0.004 (0.10) 0.200 (5.10) 0.161 (4.10) Footprint Dimensions (Surface Mount) 0.157 (4.00) 0.118 (3.00) 0.276 (7.00) 0.236 (6.00) 1.3 0.291 (7.40) 0.252 (6.40) 0.130 (3.30) 0.091 (2.30) 9 0.110 (2.80) 0.011 (1.80) 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) Footprint Dimensions (Surface Mount) 1.5 0.312 (7.92) 0.288 (7.32) 0.010 (0.26) 0.110 (2.79) 0.090 (2.29) 0.42 (10.66) 0.38 (9.66) 2.54 Note: All dimensions are in inches (millimeters) 7 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Package Dimensions Part Number Example Description H11AA814S Surface Mount Lead Bend H11AA814SD Surface Mount; Tape and reel H11AA814W 0.4" Lead Spacing H11AA814300 VDE Approved H11AA814300W VDE Approved, 0.4" Lead Spacing H11AA8143S VDE Approved, Surface Mount H11AA8143SD VDE Approved, Surface Mount, Tape & Reel *To specify the new construction version which needs 260°C max reflow peak temperature rating: add “NF098” to the end of the part number. The non-NF098 version is rated for 260°C peak reflow temperature only for parts marked with date code 0550 and later. Marking Information 4 5 V X ZZ Y 3 814 6 2 1 Definitions 1 Fairchild logo 2 Device number 3 VDE mark (Note: Only appears on parts ordered with VDE option – See order entry table) 4 One digit year code 5 Two digit work week ranging from ‘01’ to ‘53’ 6 Assembly package code 8 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Ordering Information P2 Ø1.55±0.05 P0 1.75±0.1 F W B0 A0 P1 0.3±0.05 K0 Note: All dimensions are in millimeters Description Symbol Dimensions in mm (inches) Tape wide W 16 ± 0.3 (.63) Pitch of sprocket holes P0 4 ± 0.1 (.15) Distance of compartment F P2 7.5 ± 0.1 (.295) 2 ± 0.1 (.079) Distance of compartment to compartment P1 12 ± 0.1 (.472) Compartment A0 10.45 ± 0.1 (.411) B0 5.30 ± 0.1 (.209) K0 4.25 ± 0.1 (.167) 9 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Carrier Tape Specifications Temperature (°C) Tp Tsmax Ramp-down Tsmin 25°C Soldering zon ts (Preheat) Time (sec) Profile Feature Pb-Sn solder assembly Lead Free assembly Preheat condition (Tsmin-Tsmax / ts) 100°C ~ 150°C 60 ~ 120 sec 150°C ~ 200°C 60 ~120 sec Melt soldering zone 183°C 60 ~ 120 sec 217°C 30 ~ 90 sec Peak temperature (Tp) 240 +0/-5°C 260 +0/-5°C Ramp-down rate 6°C/sec max. 6°C/sec max. Recommended Wave Soldering condition Profile Feature For all solder assembly Peak temperature (Tp) Max 260°C for 10 sec 10 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers Lead Free Recommended IR Reflow Condition The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ ActiveArray™ Bottomless™ Build it Now™ CoolFET™ CROSSVOLT™ DOME™ EcoSPARK™ E2CMOS™ EnSigna™ FACT™ FAST® FASTr™ FPS™ FRFET™ FACT Quiet Series™ GlobalOptoisolator™ GTO™ HiSeC™ I2C™ i-Lo™ ImpliedDisconnect™ IntelliMAX™ ISOPLANAR™ LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ Across the board. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 11 H11AA814 Series, H11A617 Series, H11A817 Series Rev. 1.0.8 www.fairchildsemi.com H11AA814 Series, H11A617 Series, H11A817 Series 4-Pin Phototransistor Optocouplers TRADEMARKS