MOTOROLA MJD47 Npn silicon power transistors 1 ampere 250, 400 volts 15 watt Datasheet

 Order this document
by MJD47/D
SEMICONDUCTOR TECHNICAL DATA
DPAK For Surface Mount Applications
*Motorola Preferred Device
Designed for line operated audio output amplifier, switchmode power supply drivers
and other switching applications.
•
•
•
•
•
•
Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves (“–1” Suffix)
Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)
Electrically Similar to Popular TIP47, and TIP50
250 and 400 V (Min) — VCEO(sus)
1 A Rated Collector Current
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NPN SILICON
POWER TRANSISTORS
1 AMPERE
250, 400 VOLTS
15 WATTS
MAXIMUM RATINGS
MJD47
MJD50
Unit
VCEO
250
400
Vdc
Collector–Base Voltage
VCB
350
500
Vdc
Emitter–Base Voltage
VEB
5
Vdc
Collector Current — Continuous
Peak
IC
1
2
Adc
Base Current
IB
0.6
Adc
Total Power Dissipation @ TC = 25_C
Derate above 25_C
PD
15
0.12
Watts
W/_C
Total Power Dissipation* @ TA = 25_C
Derate above 25_C
PD
1.56
0.0125
Watts
W/_C
TJ, Tstg
– 65 to + 150
_C
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
8.33
_C/W
Thermal Resistance, Junction to Ambient*
RθJA
80
_C/W
Lead Temperature for Soldering Purpose
TL
260
_C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
CASE 369A–13
CASE 369–07
MINIMUM PAD SIZES
RECOMMENDED FOR
SURFACE MOUNTED
APPLICATIONS
0.165
4.191
Symbol
0.190
4.826
Rating
Collector–Emitter Voltage
Characteristic
Symbol
Min
Max
Unit
VCEO(sus)
250
400
—
—
Vdc
—
—
0.2
0.2
0.07
1.8
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ICEO
MJD47
MJD50
mAdc
* When surface mounted on minimum pad sizes recommended.
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
v
v
(continued)
0.063
1.6
Collector Cutoff Current
(VCE = 150 Vdc, IB = 0)
(VCE = 300 Vdc, IB = 0)
0.243
6.172
Collector–Emitter Sustaining Voltage (1) MJD47
(IC = 30 mAdc, IB = 0)
MJD50
0.118
3.0
OFF CHARACTERISTICS
inches
mm
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 1
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
v
v
ELECTRICAL CHARACTERISTICS – continued (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
—
—
0.1
0.1
—
1
30
10
150
—
Unit
OFF CHARACTERISTICS — continued
Collector Cutoff Current
(VCE = 350 Vdc, VBE = 0)
(VCE = 500 Vdc, VBE = 0)
ICES
mAdc
MJD47
MJD50
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
mAdc
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 0.3 Adc, VCE = 10 Vdc)
(IC = 1 Adc, VCE = 10 Vdc)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 1 Adc, IB = 0.2 Adc)
VCE(sat)
—
1
Vdc
Base–Emitter On Voltage
(IC = 1 Adc, VCE = 10 Vdc)
VBE(on)
—
1.5
Vdc
Current Gain — Bandwidth Product
(IC = 0.2 Adc, VCE = 10 Vdc, f = 2 MHz)
fT
10
—
MHz
Small–Signal Current Gain
(IC = 0.2 Adc, VCE = 10 Vdc, f = 1 kHz)
hfe
25
—
—
DYNAMIC CHARACTERISTICS
(1) Pulse Test: Pulse Width
300 µs, Duty Cycle
2%.
TYPICAL CHARACTERISTICS
PD, POWER DISSIPATION (WATTS)
TA TC
2.5 25
TURN–ON PULSE
APPROX
+11 V
2 20
Vin 0
VEB(off)
1.5 15
TA (SURFACE MOUNT)
1 10
0.5
5
0
0
50
APPROX
+11 V
75
100
T, TEMPERATURE (°C)
Figure 1. Power Derating
2
125
150
SCOPE
Vin
RB
51
Vin
25
RC
t1
t3
TC
VCC
t2
TURN–OFF PULSE
Cjd << Ceb
–4 V
t1 ≤ 7 ns
10 < t2 < 500 µs
t3 < 15 ns
DUTY CYCLE ≈ 2%
APPROX – 9 V
RB and RC VARIED TO OBTAIN
DESIRED CURRENT LEVELS.
Figure 2. Switching Time Equivalent Circuit
Motorola Bipolar Power Transistor Device Data
1.4
200
VCE = 10 V
1.2
TJ = 150°C
60
40
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN
100
25°C
20
– 55°C
10
1
VBE(sat) @ IC/IB = 5 V
0.8
VBE(on) @ VCE = 4 V
0.6
TJ = 25°C
0.4
6
4
0.2
2
0.02
0.2
0.4 0.6
0.04 0.06 0.1
IC, COLLECTOR CURRENT (AMPS)
0
0.02
2
1
VCE(sat) @ IC/IB = 5 V
0.1
0.2
0.4 0.6
0.04 0.06
IC, COLLECTOR CURRENT (AMPS)
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
Figure 3. DC Current Gain
1
0.7
0.5
1
2
Figure 4. “On” Voltages
D = 0.5
0.3
0.2
0.2
0.1
RθJC(t) = r(t) RθJC
RθJC = 8.33°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) – TC = P(pk) θJC(t)
0.05
0.1
0.07
0.05
0.02
0.01
0.03
SINGLE PULSE
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
t, TIME (ms)
10
20
30
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
50
100
200 300
500
1k
Figure 5. Thermal Response
IC, COLLECTOR CURRENT (AMP)
5
2
500 µs
1 ms
1
0.5
TC ≤ 25°C
100 µs
dc
0.2
0.1
SECOND BREAKDOWN LIMIT
THERMAL LIMIT @ 25°C
WIRE BOND LIMIT
MJD47
CURVES APPLY BELOW
MJD50
RATED VCEO
0.05
0.02
0.01
0.005
5
10
20
50
100
200 300
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 6 is based on T J(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150_C. T J(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
v
500
Figure 6. Active Region Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
5
1
TJ = 25°C
VCC = 200 V
IC/IB = 5
0.2
tr
0.1
td
ts
2
1
t, TIME ( µs)
t, TIME ( µs)
0.5
0.05
0.1
0.05
0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPS)
Figure 7. Turn–On Time
4
tf
0.2
0.02
0.01
0.02
TJ = 25°C
VCC = 200 V
IC/IB = 5
0.5
1
2
0.05
0.02
0.05
0.1
0.2
0.5
IC, COLLECTOR CURRENT (AMPS)
1
Figure 8. Turn-Off Time
Motorola Bipolar Power Transistor Device Data
2
PACKAGE DIMENSIONS
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
–T–
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.180 BSC
0.034
0.040
0.018
0.023
0.102
0.114
0.090 BSC
0.175
0.215
0.020
0.050
0.020
–––
0.030
0.050
0.138
–––
STYLE 1:
PIN 1.
2.
3.
4.
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.45
5.46
0.51
1.27
0.51
–––
0.77
1.27
3.51
–––
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369A–13
ISSUE W
C
B
V
E
R
4
A
1
2
3
S
–T–
K
SEATING
PLANE
J
F
H
D
G
3 PL
0.13 (0.005)
M
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
INCHES
MIN
MAX
0.235
0.250
0.250
0.265
0.086
0.094
0.027
0.035
0.033
0.040
0.037
0.047
0.090 BSC
0.034
0.040
0.018
0.023
0.350
0.380
0.175
0.215
0.050
0.090
0.030
0.050
STYLE 1:
PIN 1.
2.
3.
4.
T
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.84
1.01
0.94
1.19
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.46
1.27
2.28
0.77
1.27
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 369–07
ISSUE K
Motorola Bipolar Power Transistor Device Data
5
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
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6
◊
Motorola Bipolar Power Transistor Device Data
*MJD47/D*
MJD47/D
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