SEMICONDUCTOR E35A2CPS, E35A2CPR TECHNICAL DATA STACK SILICON DIFFUSED DIODE ALTERNATOR DIODE FOR AUTOMOTIVE APPLICATION. F2 D FEATURES Average Forward Current : IO=35A. E Reverse Voltage : 200V(Min.) L2 F1 E35A2CPS (+ Type) L1 G POLARITY B E35A2CPR (- Type) A MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Average Forward Current IF(AV) 35 A Peak 1 Cycle Surge Current IFSM 360 (60Hz) A Repetitive Peak Reverse Voltage VRRM 200 V Tj -40 200 Tstg -40 200 Junction Temperature Storage Temperature Range ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC DIM MILLIMETERS DIM MILLIMETERS 0.32 F1 Φ11.7+0.1/-0 A 3.1 F2 3.85+0/-0.2 B _ 0.1 G 0.5 Φ1.45+ D L1 8.4 MAX E 1.55 DIM TYPE POLARITY S L2 R MILLIMETERS 17.5+0/-1.5 21.5+0/-1.5 PF ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT - - 1.15 V 200 - - V Forward Voltage VF IFM=100A Reverse Voltage VR IR=5mA Reverse Current IR VR=200V - - 50 A Reverse Recovery Time trr IF=0.1A, IR=0.1A - - 15 S Ta=150 , VR=200V - - 2.5 mA Junction to Case - 0.83 - Junction to Fin - 1.03 - Reverse Leakage Current Under High Temperature Rth Temperature Resistance 2002. 10. 9 HIR Revision No : 0 /W 1/1