IXYS IXGH28N140B3H1 Genx3 1400v igbts w/ diode Datasheet

IXGH28N140B3H1
IXGX28N140B3H1
IXGK28N140B3H1
GenX3TM 1400V
IGBTs w/ Diode
Avalanche Rated
VCES = 1400V
IC110 = 28A
VCE(sat) ≤ 3.60V
TO-247 (IXGH)
G
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
1400
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
1400
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
IC25
IC110
IF110
ICM
TC
TC
TC
TC
60
28
15
150
A
A
A
A
IA
EAS
TC = 25°C
TC = 25°C
28
360
A
mJ
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 5Ω
Clamped Inductive Load
ICM = 120
@ VCES < VCE
A
PC
TC = 25°C
300
W
-55 ... +150
°C
C
Tab
E
Maximum Ratings
= 25°C
= 110°C
= 110°C
= 25°C, 1ms
TJ
PLUS247 (IXGX)
G
Tab
G = Gate
C = Collector
150
°C
-55 ... +150
°C
Features
300
260
°C
°C
z
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
6
10
g
g
Md
FC
Mounting Torque (IXGH & IXGK)
Mounting Force (IXGX)
Weight
TO-247 & PLUS247
TO-264
Tab
G
C
E
TJM
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
E
TO-264 (IXGK)
Tstg
TL
TSOLD
C
z
z
z
z
E
= Emitter
Tab = Collector
Optimized for Low Conduction and
Switching Losses
Square RBSOA
Avalanche Rated
Anti-Parallel Ultra Fast Diode
High Current Handling Capability
Advantages
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
VGE(th)
IC
3.0
ICES
VCE = VCES, VGE = 0V
= 250μA, VCE = VGE
5.0
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= IC110, VGE = 15V, Note 1
TJ = 125°C
© 2010 IXYS CORPORATION, All Rights Reserved
Applications
±100 nA
z
z
z
z
z
3.00
3.05
3.60
High Power Density
Low Gate Drive Requirement
V
50 μA
1 mA
Note 2, TJ = 125°C
IGES
z
V
z
z
Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
DS99736A(11/10)
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
IC = IC110, VCE = 10V, Note 1
12
Cies
Coes
VCE = 25V, VGE = 0V, f = 1 MHz
19
S
1830
pF
163
pF
Cres
46
pF
Qg(on)
88
nC
Qge
IC = IC110, VGE = 15V, VCE = 0.5 • VCES
Qgc
td(on)
tri
Inductive load, TJ = 25°C
12
nC
38
nC
16
ns
36
ns
Eon
IC
= IC110, VGE = 15V
3.6
mJ
td(off)
VCE = 960V, RG = 5Ω
190
Note 3
360
tfi
Eoff
3.9
td(on)
16
400
ns
ns
6.5
J
ns
tri
Inductive load, TJ = 125°C
50
ns
Eon
IC = IC110, VGE = 15V
7.3
mJ
td(off)
VCE = 960V, RG = 5Ω
tfi
Eoff
Note 3
215
ns
700
ns
6.5
mJ
0.42 °C/W
RthJC
RthCs
0.21
°C/W
0.15
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF
IF = 20A, VGE = 0V, Note 1
trr
IRM
Characteristic Values
Min.
Typ.
Max.
2.65
3.0
V
V
IF = 20A, VGE = 0V, -diF/dt = -200A/μs,
350
ns
VR = 1200V, TJ = 125°C
18.5
A
TJ = 150°C
RthJC
Notes:
0.90 °C/W
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Part must be heatsunk for high-temp Ices measurement.
3. Switching times & energy losses may increase for higher VCE(Clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
TO-247 Outline
1
2
Dim.
Millimeter
Min. Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
1.65
2.13
b1
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
∅P 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
∅P
3
e
Terminals: 1 - Gate
3 - Emitted
2 - Collector
PLUS247 Outline
Terminals:
TO-264 AA Outline
Back Side
Terminals:
© 2010 IXYS CORPORATION, All Rights Reserved
Dim.
Millimeter
Min. Max.
Inches
Min. Max.
A
A1
A2
4.83
2.29
1.91
5.21
2.54
2.16
.190
.090
.075
.205
.100
.085
b
b1
b2
1.14
1.91
2.92
1.40
2.13
3.12
.045
.075
.115
.055
.084
.123
C
D
E
e
L
L1
Q
R
1 - Gate
2 - Collector
3 - Emitter
1 = Gate
2,4 = Collector
3 = Emitter
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 1. Output Characteristics @ T J = 25ºC
Fig. 2. Extended Output Characteristics @ T J = 25ºC
200
60
VGE = 15V
13V
11V
140
9V
40
30
7V
20
11V
120
100
9V
80
60
7V
40
10
20
5V
5V
0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
0
5
5
10
20
VCE - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
25
1.6
VGE = 15V
13V
11V
VGE = 15V
1.4
VCE(sat) - Normalized
50
9V
40
30
7V
20
10
I
C
= 56A
I
C
= 28A
I
C
= 14A
1.2
1.0
0.8
5V
0.6
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
5.5
-25
0
25
50
75
100
125
150
10
11
TJ - Degrees Centigrade
VCE - Volts
Fig. 5. Collector-to-Emitter Voltage
vs. Gate-to-Emitter Voltage
Fig. 6. Input Admittance
8
120
TJ = 25ºC
7
C
TJ = - 40ºC
25ºC
125ºC
100
= 56A
28A
14A
IC - Amperes
I
6
VCE - Volts
15
VCE - Volts
60
IC - Amperes
13V
160
IC - Amperes
IC - Amperes
50
VGE = 15V
180
5
80
60
4
40
3
20
2
0
5
6
7
8
9
10
11
12
13
14
15
VGE - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
3
4
5
6
7
VGE - Volts
8
9
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 7. Transconductance
Fig. 8. Gate Charge
28
16
24
14
I C = 28A
I G = 10mA
12
16
VGE - Volts
20
g f s - Siemens
VCE = 600V
TJ = - 40ºC
25ºC
125ºC
12
8
10
8
6
4
4
2
0
0
0
20
40
60
80
100
0
120
10
20
30
40
50
60
70
80
90
QG - NanoCoulombs
IC - Amperes
Fig. 9. Capacitance
Fig. 10. Reverse-Bias Safe Operating Area
10,000
140
f = 1 MHz
100
Cies
1,000
IC - Amperes
Capacitance - PicoFarads
120
Coes
80
60
100
40
20
Cres
10
0
5
10
15
20
25
30
35
40
0
200
TJ = 125ºC
RG = 5Ω
dv / dt < 10V / ns
400
600
VCE - Volts
800
1000
1200
1400
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z(th)JC - ºC / W
1
0.1
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
© 2010 IXYS CORPORATION, All Rights Reserved
1
10
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 13. Inductive Swiching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
18
---
TJ = 125ºC , VGE = 15V
I
C
14
17
12
15
= 56A
10
11
I C = 28A
8
9
6
Eon
----
12
VCE = 960V
10
7
4
Eoff
10
8
8
TJ = 125ºC
6
6
4
4
2
5
Eon - MilliJoules
13
Eon - MilliJoules
12
14
RG = 5Ω , VGE = 15V
Eoff - MilliJoules
VCE = 960V
14
Eoff - MilliJoules
Eon -
Eoff
16
19
2
TJ = 25ºC
I C = 14A
2
10
20
30
40
50
60
20
25
30
35
40
45
50
55
IC - Amperes
Fig. 14. Inductive Swiching Energy Loss vs.
Junction Temperature
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
Eoff
----
Eon
RG = 5Ω ,
C
8
= 56A
6
I C = 28A
4
4
2
2
td(off) - - - 800
TJ = 125ºC, VGE = 15V
VCE = 960V
10
t f i - Nanoseconds
6
t fi
750
700
600
I
650
C
= 28A
400
I
C
= 56A
600
t d(off) - Nanoseconds
I
1000
12
Eon - MilliJoules
8
60
800
VGE = 15V
VCE = 960V
10
15
RG - Ohms
14
12
0
10
70
14
Eoff - MilliJoules
0
3
0
200
I C = 14A
0
25
35
45
55
65
75
85
95
105
115
0
125
550
30
40
50
60
70
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
900
350
td(off) - - - -
RG = 5Ω , VGE = 15V
600
200
TJ = 25ºC
400
150
200
100
0
50
15
20
25
30
35
40
45
50
55
60
IC - Amperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
t f i - Nanoseconds
TJ = 125ºC
t fi
td(off) - - - -
280
RG = 5Ω , VGE = 15V
VCE = 960V
700
600
250
220
I C = 28A
500
190
400
160
I C = 56A
300
130
200
25
35
45
55
65
75
85
95
TJ - Degrees Centigrade
105
115
100
125
t d(off) - Nanoseconds
250
t d(off) - Nanoseconds
800
310
800
300
VCE = 960V
t f i - Nanoseconds
20
RG - Ohms
t fi
10
10
TJ - Degrees Centigrade
1200
1000
0
0
IXGH28N140B3H1 IXGK28N140B3H1
IXGX28N140B3H1
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
t ri
td(on) - - - -
TJ = 125ºC, VGE = 15V
120
140
100
160
I
C
80
= 56A
120
60
80
I
C
40
= 28A
40
20
0
10
20
30
40
50
60
t ri
td(on) - - - -
32
RG = 5Ω , VGE = 15V
120
28
VCE = 960V
100
24
80
20
TJ = 25ºC
60
16
TJ = 125ºC
40
12
20
0
0
36
8
0
70
4
10
RG - Ohms
t d(on) - Nanoseconds
VCE = 960V
200
160
t d(on) - Nanoseconds
t r i - Nanoseconds
240
140
t r i - Nanoseconds
280
15
20
25
30
35
40
45
50
55
60
IC - Amperes
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
180
40
160
t ri
32
VCE = 960V
120
28
100
24
I C = 56A
80
20
60
16
I C = 28A
40
t d(on) - Nanoseconds
140
t r i - Nanoseconds
36
td(on) - - - -
RG = 5Ω , VGE = 15V
12
20
25
35
45
55
65
75
85
95
105
115
8
125
TJ - Degrees Centigrade
© 2010 IXYS CORPORATION, All Rights Reserved
IXYS REF: G_28N140B3H1(4A)11-29-10-B
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