IRF IRLR8103V N-channel application-specific mosfet Datasheet

PD-94021C
IRLR8103V
•
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Minimizes Parallel MOSFETs for high current
applications
D
• 100% RG Tested
G
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
S
D-Pak
DEVICE CHARACTERISTICS
The IRLR8103V has been optimized for all parameters
that are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRLR8103V offers an extremely low combination of
Qsw & RDS(on) for reduced losses in both control and
synchronous FET applications.
IRLR8103V
7.9 mΩ
RDS(on)
QG
QSW
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical
PCB mount application.
27 nC
12 nC
QOSS
29nC
Absolute Maximum Ratings
Parameter
Symbol
IRLR8103V
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
Continuous Drain or Source Current
TC = 25°C
(VGS > 10V)
TC= 90°C
c
TC = 25°C
Power Dissipation e
TC = 90°C
Pulsed Drain Current
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
c
Units
V
91
ID
A
63
363
IDM
115
PD
TJ , TSTG
60
-55 to 150
IS
91
ISM
363
W
°C
A
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Case
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h
eh
Symbol
Typ.
Max.
RθJA
–––
50
RθJC
–––
1.09
Units
°C/W
1
10/22/04
IRLR8103V
Electrical Characteristics
Parameter
Symbol Min Typ Max Units
Drain-to-Source Breakdown Voltage
BVDSS
30
–––
–––
Static Drain-Source
RDS(on)
–––
6.9
9.0
On-Resistance
Gate Threshold Voltage
VGS(th)
–––
1.0
7.9
–––
10.5
3.0
V
Drain-to-Source Leakage Current
IDSS
–––
–––
50
µA
–––
–––
20
––– 100
––– ±100
V
mΩ
µA
Conditions
VGS = 0V, ID = 250µA
VGS = 10V, ID = 15A
VGS = 4.5V, ID = 15A
d
d
VDS = VGS, ID = 250µA
VDS = 30V, VGS = 0V
VDS = 24V, VGS = 0
VDS = 24V, VGS = 0, TJ = 100°C
Gate-Source Leakage Current
IGSS
–––
–––
Total Gate Charge, Control FET
QG
–––
27
–––
VGS = 5V, ID = 15A, VDS = 16V
Total Gate Charge, Synch FET
QG
–––
23
–––
VGS = 5V, VDS < 100mV
Pre-Vth Gate-Source Charge
QGS1
–––
4.7
–––
Post-Vth Gate-Source Charge
QGS2
–––
2.0
–––
Gate to Drain Charge
QGD
–––
9.7
–––
Switch Charge (Qgs2 + Qgd)
QSW
–––
12
–––
Output Charge
QOSS
–––
29
–––
Gate Resistance
RG
0.8
–––
3.1
Turn-On Delay Time
td(on)
–––
10
–––
VDD = 16V
Rise Time
tr
–––
9
–––
ID = 15A
Turn-Off Delay Time
td(off)
–––
24
–––
Fall Time
tf
–––
18
–––
Input Capacitance
Ciss
–––
2672 –––
Output Capacitance
Coss
–––
1064 –––
Reverse Transfer Capacitance
Crss
–––
109
nA
nC
VGS = ± 20V
VDS = 16V, ID = 15A
VDS = 16V, VGS = 0
Ω
ns
VGS = 5.0V
Clamped Inductive Load
pF
VGS = 16V, VGS=0
–––
Source-Drain Rating & Characteristics
Parameter
Diode Forward Voltage
Reverse Recovery Charge
f
Symbol Min Typ Max Units
d
Conditions
Qrr
–––
–––
0.9
103
1.3
–––
V
nC
IS = 15A , VGS = 0V
Qrr(s)
–––
96
–––
nC
di/dt = 700A/µs , (with 10BQ040)
VSD
di/dt ~ 700A/µs
VDS = 16V, VGS = 0V, IF = 15A
Reverse Recovery Charge
(with Parallel Schottky)
f
VDS= 16V, VGS = 0V, IF = 15A
Notes:

‚
ƒ
„
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 400 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q oss
Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS = 5.0V, IF = 15A.
† Rθ is measured at TJ approximately 90°C
2
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IRLR8103V
1000
1000
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 2.7V
TOP
TOP
100
100
2.7V
10
2.7V
10
20µs PULSE WIDTH
TJ = 25 °C
1
0.1
1
10
20µs PULSE WIDTH
TJ = 150 °C
1
0.1
100
1
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
1000
TJ = 25 ° C
TJ = 150 ° C
100
10
2.0
V DS= 15V
20µs PULSE WIDTH
3.0
4.0
5.0
6.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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7.0
2.0
ID = 15A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20 40 60 80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR8103V
VGS =
Ciss =
Crss =
Coss =
C, Capacitance (pF)
4000
3000
6
0V,
f = 1MHz
Cgs + Cgd , Cds SHORTED
Cgd
Cds + Cgd
VGS , Gate-to-Source Voltage (V)
5000
Ciss
2000
Coss
1000
ID = 15A
V DS= 24V
V DS= 15V
5
4
3
2
1
Crss
0
1
10
0
100
VDS , Drain-to-Source Voltage (V)
0
15
20
25
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
ISD , Reverse Drain Current (A)
10
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
TJ = 150° C
10
10us
100
TJ = 25 ° C
100us
1ms
10
1
0.1
0.0
V GS = 0 V
0.4
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig
Fig 7.
7. Typical
Typical Source-Drain
Source-Drain Diode
Diode
Forward
Forward Voltage
Voltage
4
5
1
2.4
10ms
TC = 25 °C
TJ = 150 °C
Single Pulse
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR8103V
LIMITED BY PACKAGE
VGS
D.U.T.
RG
80
ID , Drain Current (A)
RD
V DS
100
+
V
DD
-
10V
60
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a.
10a. Switching
Test Circuit
Fig
Switching Time
Time Test
Circuit
40
VDS
20
0
90%
25
50
75
100
125
150
TC , Case Temperature ( ° C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
0.016
R DS(on) , Drain-to -Source On Resistance ( Ω)
R DS ( on ) , Drain-to-Source On Resistance ( Ω )
IRLR8103V
0.014
0.012
VGS = 4.5V
0.010
VGS = 10V
0.008
0.006
0
50
100
150
200
250
300
0.014
0.012
0.010
ID = 15A
0.008
0.006
0.0
350
2.0
4.0
6.0
8.0
VGS, Gate -to -Source Voltage (V)
ID , Drain Current ( A )
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
12V
QG
VGS
50KΩ
.2µF
QGS
.3µF
D.U.T.
+
V
- DS
QGD
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit and Waveform
6
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IRLR8103V
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
2.38 (.094)
2.19 (.086)
6.73 (.265)
6.35 (.250)
1.14 (.045)
0.89 (.035)
-A1.27 (.050)
0.88 (.035)
5.46 (.215)
5.21 (.205)
0.58 (.023)
0.46 (.018)
4
6.45 (.245)
5.68 (.224)
6.22 (.245)
5.97 (.235)
1.02 (.040)
1.64 (.025)
1
2
10.42 (.410)
9.40 (.370)
LEAD ASSIGNMENTS
1 - GATE
3
0.51 (.020)
MIN.
-B1.52 (.060)
1.15 (.045)
3X
1.14 (.045)
2X
0.76 (.030)
0.89 (.035)
0.64 (.025)
0.25 (.010)
2 - DRAIN
3 - SOURCE
4 - DRAIN
0.58 (.023)
0.46 (.018)
M A M B
NOTES:
1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
2.28 (.090)
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE TO-252AA.
4 DIMENSIONS SHOWN ARE BEFORE SOLDER DIP,
SOLDER DIP MAX. +0.16 (.006).
4.57 (.180)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WIT H AS SEMBLY
LOT CODE 1234
AS SEMBLED ON WW 16, 1999
IN T HE AS SEMBLY LINE "A"
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
IRFR120
916A
12
N ote: "P" in as s embly line
position indicates "Lead-Free"
ASS EMBLY
LOT CODE
34
DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
IRFR120
12
ASS EMBLY
LOT CODE
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P916A
34
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 16
A = AS SEMBLY SITE CODE
7
IRLR8103V
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/04
8
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